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Doped metal oxide semiconductor, thin film transistor and application thereof

A technology of oxide semiconductors and thin film transistors, which is applied in the manufacture of transistors, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of poor stability and poor electrical stability, and achieve reduced impact, improved stability, and reduced mobility Effect

Pending Publication Date: 2020-02-14
深圳庸行科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the currently commonly used ITZO materials have poor electrical stability, especially the stability under light needs to be improved.

Method used

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  • Doped metal oxide semiconductor, thin film transistor and application thereof
  • Doped metal oxide semiconductor, thin film transistor and application thereof
  • Doped metal oxide semiconductor, thin film transistor and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0046] Example 1: Ytterbium oxide doped indium tin oxide semiconductor material

[0047] A group of doped metal oxide semiconductors, the group of doped metal oxide semiconductors is: indium tin oxide (ITO) is doped with ytterbium oxide as a light stabilizer to form ytterbium oxide doped indium tin oxide (Yb:ITO) ) Of semiconductor materials.

[0048] Among them, in indium tin oxide, In 2 O 3 : SnO 2 =2:1 (mol); that is, the molar ratio of In and Sn is In:Sn=4:1; in ytterbium oxide doped indium tin oxide, the molar ratio of ytterbium to indium tin oxide is 0.002, 0.020, 0.100, 0.200, 0.40 and 0.60.

Embodiment 2

[0049] Example 2: Ytterbium oxide doped indium tin zinc oxide semiconductor material

[0050] A group of doped metal oxide semiconductors, the group of doped metal oxide semiconductors is: indium tin zinc oxide (ITZO) is doped with ytterbium oxide as a light stabilizer to form ytterbium oxide doped indium tin zinc oxide (Yb : ITZO) semiconductor materials.

[0051] In indium tin zinc oxide, In 2 O 3 : SnO 2 :ZnO=1.5:2:5(mol); That is, the molar ratio of In, Sn and Zn is In:Sn:Zn=3:2:5; in ytterbium oxide doped indium tin zinc oxide, ytterbium and indium tin oxide The molar ratio of zinc is 0.002, 0.020, 0.100, 0.200, 0.40 and 0.60, respectively.

Embodiment 3

[0052] Example 3: Praseodymium oxide doped indium tin zinc oxide semiconductor material

[0053] A doped metal oxide semiconductor, the doped metal oxide semiconductor is: indium tin zinc oxide (ITZO) is doped with praseodymium oxide as a light stabilizer to form praseodymium oxide doped indium tin zinc oxide (Pr: ITZO) semiconductor materials.

[0054] In indium tin zinc oxide, the molar ratio of In, Sn and Zn is In:Sn:Zn=2:2:1; in praseodymium oxide doped indium tin zinc oxide, the molar ratio of praseodymium to indium tin zinc oxide is respectively 0.002, 0.020, 0.100, 0.200, 0.40, and 0.60.

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Abstract

The invention discloses a doped metal oxide semiconductor. The doped metal oxide semiconductor is an indium tin oxide or indium tin zinc oxide semiconductor doped with rare earth oxide. The doped metal oxide semiconductor can effectively inhibit the oxygen vacancy concentration in the film at a low ytterbium oxide or praseodymium oxide doping concentration, and the mobility of the doped metal oxide semiconductor can be kept at a high value. The key point lies in that the formed thin film can avoid the influence of illumination on I-V characteristics and stability, so that the stability of a metal oxide semiconductor device under illumination is greatly improved. The invention further provides a thin film transistor of the doped metal oxide semiconductor and an application of the thin filmtransistor.

Description

Technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to materials and device structures used in the production of metal oxide semiconductor thin film transistor backplanes in flat panel display and detector applications, and in particular to a doped metal oxide semiconductor and thin film transistor and applications. Background technique [0002] For the existing metal oxide semiconductor system, In 3+ The 5s orbital of ions is the main electron transport channel. However, since the bond breaking energy of In ions and O ions is low, so in pure In 2 O 3 There are a lot of oxygen vacancy defects in the film. The oxygen vacancies are the main reason for the deterioration of the stability of the metal oxide thin film transistor. Usually, doping and In 3+ Zn with equivalent number of ions 2+ The ions keep the metal oxide film amorphous. [0003] Sn 4+ The ion mainly uses the chemical inertness of the Sn-O bond to provide resis...

Claims

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Application Information

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IPC IPC(8): H01L29/24H01L21/336H01L29/786
CPCH01L29/7869H01L29/66969H01L29/24H01L27/1225H01L29/42384H01L29/6675H01L29/78693
Inventor 徐苗徐华吴为敬陈为峰王磊彭俊彪
Owner 深圳庸行科技有限公司
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