Semiconductor device and forming method thereof
A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as poor electrical performance of static random access memory, and achieve the effect of performance improvement and good isolation effect
Active Publication Date: 2020-02-21
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP +1
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- Application Information
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Problems solved by technology
[0005] However, the electrical performance of SRAM in the prior art is poor
Method used
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[0031] As described in the background, prior art semiconductor devices have poor performance.
[0032] Figure 1 to Figure 2 It is a schematic diagram of the structure of a SRAM device.
[0033] A SRAM device, please refer to figure 1 and figure 2 , figure 1 is a top view of a semiconductor device, figure 2 for along figure 1 A schematic cross-sectional view of the middle cutting line M-M1, the substrate 100, the substrate 100 includes adjacent device regions I, the adjacent device regions I are mirror-connected along the axis S-S1, and the surface of the substrate 100 of the device region I has fins portion 110 and an isolation layer 101, the isolation layer 101 covers part of the sidewall of the fin portion 110, and the fin portion 110 of the adjacent device region I is adjacent; the gate structure across the adjacent fin portion 110 of the adjacent device region I 120; the source-drain doped layer 130 in the fin portion 110 located on both sides of the device regi...
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Abstract
The invention provides a semiconductor device and a forming method thereof. The method includes steps that a substrate including a first region, a second region and a third region is provided, the second region is located between the first region and the third region, and the second region is adjacent to the first region and the third region; a first doped layer is arranged in a first region substrate, a second doped layer is arranged in a third region substrate, and the first doped layer is adjacent to the second doped layer; a dielectric layer covering the first doped layer and the second doped layer on the substrate is formed; a first mask layer and a second mask layer is formed on the dielectric layer in the second region, and the second mask layer covers a side wall of the first masklayer; dielectric layers of the first region and the third region are etched by taking the first mask layer and the second mask layer as masks to form first grooves, and the first doped layer and thesecond doped layer are exposed from the first grooves; the first mask layer is then removed; after the first mask layer is removed, the dielectric layer of the second region is etched by taking the second mask layer as a mask, and a second groove is formed in the dielectric layer of the second region. The method is advantaged in that performance of the semiconductor device is improved.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] With the continuous development of semiconductor technology, memory presents a development trend of high integration, high speed, and low power consumption. [0003] Functionally, memory is divided into random access memory (RAM, Random Access Memory) and read-only memory (ROM, Read Only Memory). When the random access memory is working, data can be read from any specified address at any time, and data can also be written to any specified storage unit at any time. The read and write operation of the random access memory is convenient and the use is flexible. [0004] Random access memory can be divided into static random access memory (SRAM) and dynamic random access memory (DRAM). Among them, SRAM utilizes flip-flops with positive feedback to store data, and mainly relies on continuou...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L27/11H01L27/02
CPCH01L27/0207H10B10/12H01L21/823871H01L21/823814H01L21/823475H01L21/823418H01L21/823431H01L27/0886H01L21/31144H01L27/0924H01L29/0653H01L29/0847H01L21/31111H01L21/823821H01L21/823878H01L29/45
Inventor 王楠
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP