Silicon wafer cleaning method

A silicon wafer cleaning and silicon wafer technology, applied in the field of solar cells, can solve the problems of easy decomposition of chemical reagents, high energy consumption, loss, etc., and achieve the effects of promoting removal capacity, reducing the amount of liquid replenishment, and reducing loss.

Inactive Publication Date: 2020-03-31
德运创鑫(北京)科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of this, the object of the present invention is to propose a method for cleaning silicon wafers to solve the technical problems that chemical reagents are easily decomposed or lost, and energy consumption is large

Method used

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Effect test

Embodiment 1

[0047] (1) Put the silicon chip into the first solution whose temperature is 60°C, and pass ozone into the first solution so that the ozone concentration in the first solution is 100 mg / liter, and the silicon The cleaning time of the tablet in the first solution is 8 minutes; wherein, the first solution includes hydrochloric acid, the volume ratio of the hydrochloric acid to the solute (ie water) is 1:6, and the mass fraction of the hydrochloric acid is 36%.

[0048] (2) The silicon chip is taken out from the first solution and put into a second solution, and the cleaning time of the silicon chip in the second solution is 3 minutes; wherein, the second solution includes hydrofluoric acid and Nitric acid, the volume ratio of the hydrofluoric acid to the nitric acid is 1:100, the mass fraction of the hydrofluoric acid is 49%, and the mass fraction of the nitric acid is 68%.

[0049] (3) Take the silicon chip out from the second solution, put it into a third solution with a tempe...

Embodiment 2

[0054] (1) Put the silicon chip into the first solution with a temperature of 58°C, and pass ozone into the first solution so that the ozone concentration in the first solution is 20 mg / liter, and the silicon The cleaning time of the sheet in the first solution is 9 minutes; wherein, the first solution includes hydrochloric acid and hydrogen peroxide, and the volume ratio of the hydrochloric acid, hydrogen peroxide and solute (i.e. water) is 1:2:7, and the hydrochloric acid Mass fraction is 20%, and the mass fraction of described hydrogen peroxide is 20%.

[0055] (2) The silicon chip is taken out from the first solution and put into a second solution, and the cleaning time of the silicon chip in the second solution is 4 minutes; wherein, the second solution includes hydrofluoric acid and Nitric acid, the volume ratio of the hydrofluoric acid to the nitric acid is 0.1:100, the mass fraction of the hydrofluoric acid is 30%, and the mass fraction of the nitric acid is 40%.

[0...

Embodiment 3

[0061] (1) Put the silicon chip into the first solution with a temperature of 70°C, and pass ozone into the first solution so that the ozone concentration in the first solution is 200 mg / liter, and the silicon The cleaning time of sheet in the first solution is 15 minutes; Wherein, described first solution comprises hydrochloric acid and hydrogen peroxide, and the volume ratio of described hydrochloric acid, hydrogen peroxide and solute (ie water) is 1:2:7, and the volume ratio of described hydrochloric acid Mass fraction is 45%, and the mass fraction of described hydrogen peroxide is 40%.

[0062] (2) The silicon chip is taken out from the first solution and put into a second solution, and the cleaning time of the silicon chip in the second solution is 5 minutes; wherein, the second solution includes hydrofluoric acid and Nitric acid, the volume ratio of the hydrofluoric acid to the nitric acid is 2:100, the mass fraction of the hydrofluoric acid is 70%, and the mass fraction...

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Abstract

The invention discloses a silicon wafer cleaning method which comprises the following steps: putting a silicon wafer into a first solution, and introducing ozone into the first solution; wherein the first solution comprises hydrochloric acid; taking the silicon wafer out of the first solution and put into a second solution, wherein the second solution comprises nitric acid and hydrofluoric acid; taking the silicon wafer out of the second solution, putting the silicon wafer into a third solution, and introducing ozone into the third solution; wherein the third solution comprises ammonia water;taking the silicon wafer out of the third solution and putting the wafer into a fourth solution, wherein the fourth solution comprises hydrochloric acid and hydrofluoric acid; and taking out the silicon wafer from the fourth solution, and drying the silicon wafer. Decomposition of hydrogen peroxide and loss of oxygen atoms are compensated, removal of trace metal ions is accelerated, and the surface cleanliness of the silicon wafer is improved, so that the minority carrier lifetime of the silicon wafer is prolonged. Meanwhile, the heating temperature is reduced, and the loss of chemical reagents is reduced, so that the fluid infusion amount of the chemical reagents is reduced, and the replacement period of chemical solutions is prolonged.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a silicon wafer cleaning method. Background technique [0002] At present, in the operation of cleaning silicon wafers, continuous heating (temperature 70°C-90°C) and nitrogen bubbling are required. Due to the high temperature, it is easy to cause the decomposition, volatilization and loss of chemical reagents. At the same time, additional A certain amount of chemical reagents leads to a large consumption of production costs. The patent with the application number 201810167905.6 discloses a silicon wafer cleaning solution and a silicon wafer cleaning method, including: at a temperature of 25°C to 75°C, using a silicon wafer cleaning solution to catalyze metal texturing and elemental metal ionization After the silicon wafer is cleaned; however, this method still has the technical problem that the solution temperature is high, which easily causes the chemical reagent to decomp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02041H01L21/02052H01L21/02054
Inventor 龙永灯
Owner 德运创鑫(北京)科技有限公司
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