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Method of fabricating and servicing a photomask

A photomask and mask technology, applied in chemical instruments and methods, cleaning methods and appliances, and originals for photomechanical processing, can solve the problems of incomplete removal of hydrocarbon pollutants, white spot defects, proximity and critical Issues such as size uniformity drift

Pending Publication Date: 2020-04-07
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Hydrocarbon contamination may not be fully removed during mask cleaning operations
Hydrocarbon contamination can cause proximity and critical size uniformity drift and white spot defects

Method used

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  • Method of fabricating and servicing a photomask
  • Method of fabricating and servicing a photomask
  • Method of fabricating and servicing a photomask

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0086] Example 1 is a method of making and maintaining a photomask comprising: exposing a photoresist-coated substrate to radiation reflected from a reflective photomask, or during a photolithographic operation without using said reflective In the case of a photomask, storing said reflective photomask for a period of time; wherein, during said exposure or said storage, contaminants are formed on the surface of said reflective photomask; while using said reflective photomask placing the reflective photomask with contaminants on its surface in a plasma processing chamber after exposing the photoresist-coated substrate or after the period of time; and Plasma processing the reflective photomask with the contaminants in a plasma processing chamber to remove the contaminants from the surface; wherein the plasma includes oxygen plasma or hydrogen plasma.

[0087] Example 2 is the method of example 1, wherein during the plasma processing, the plasma processing chamber is maintained at...

example 11

[0096]Example 11 is a method of manufacturing and maintaining a photomask, comprising: forming a photomask; using the photomask in a photolithography process to form a photoresist pattern on a substrate; and After using the photomask in a plasma processing chamber, the photomask is plasma-treated to remove contaminants from the surface of the photomask; wherein the plasma includes oxygen plasma body or hydrogen plasma.

[0097] Example 12 is the method of example 11, wherein forming the photomask comprises: forming a Mo / Si multilayer over a substrate; forming a capping layer over the Mo / Si multilayer; An absorber layer is formed over the capping layer; a hard mask layer is formed over the absorber layer; and a first photoresist layer is formed over the hard mask layer.

[0098] Example 13 is the method of example 12, further comprising: patterning the first photoresist layer to expose a portion of the hard mask layer; etching the exposed portion of the hard mask layer to expo...

example 20

[0105] Example 20 is a method of manufacturing and maintaining a photomask comprising: forming a photomask; storing the photomask in a photomask cassette; and storing the photomask in the photomask After being placed in the box, the photomask is plasma-treated in a plasma processing chamber to remove contaminants from the surface of the photomask, wherein the plasma includes oxygen plasma or hydrogen plasma .

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Abstract

The invention relates to a method of fabricating and servicing a photomask. The method includes placing a photomask having a contamination on a surface thereof in a plasma processing chamber. The contaminated photomask is plasma processed in the plasma processing chamber to remove the contamination from the surface. The plasma includes oxygen plasma or hydrogen plasma.

Description

technical field [0001] The present disclosure generally relates to methods of manufacturing and maintaining photomasks. Background technique [0002] As the semiconductor industry has advanced to nanotechnology process nodes in pursuit of higher device density, higher performance, and lower cost, the challenges from both manufacturing and design issues have become greater. Technological advances in IC materials and design have produced several generations of ICs, each of which has smaller and more complex circuits than the previous generation. During IC evolution, functional density (ie, the number of interconnected devices per chip area) typically increases, while geometry size (ie, the smallest component (or line) that can be produced using a fabrication process) decreases. This downscaling process often provides benefits by increasing production efficiency and reducing associated costs. This shrinking also increases the complexity of handling and manufacturing ICs. [...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/82B08B7/00
CPCG03F1/82B08B7/00G03F1/24H01L21/027H01L21/02315H01L21/02041H01L21/311H01L21/0234G03F7/2002
Inventor 杨淳复许倍诚连大成李信昌
Owner TAIWAN SEMICON MFG CO LTD