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Hydrogen-containing ruthenium oxides, electronic devices and methods for regulating the physical properties of ruthenium oxides

A technology of ruthenium oxide and oxide, which is applied in the field of material science and can solve problems such as limited composition changes

Active Publication Date: 2021-10-12
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Based on this, it is necessary to provide a method for regulating the physical properties of hydrogen-containing ruthenium oxides, electronic devices, and ruthenium oxides in view of the complex preparation process and limited composition changes of new materials based on ruthenium oxides.

Method used

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  • Hydrogen-containing ruthenium oxides, electronic devices and methods for regulating the physical properties of ruthenium oxides
  • Hydrogen-containing ruthenium oxides, electronic devices and methods for regulating the physical properties of ruthenium oxides
  • Hydrogen-containing ruthenium oxides, electronic devices and methods for regulating the physical properties of ruthenium oxides

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0079] Embodiment one: the structural formula is SrRuO 3 h y Preparation and characterization of the hydrogen-containing ruthenium oxide.

[0080] In this example, by means of pulsed laser deposition, sputtering SrRuO 3 Target material, in SrTiO 3 Deposition-grown SrRuO 3 film. SrO 3 The structure of the thin film was characterized by X-ray diffractometer (X-ray diffraction abbreviation XRD). by SrRuO 3 The analysis of the diffraction pattern of the thin film obtains the composition of the material and the structure information of the material. XRD measurement results such as image 3 shown. image 3 The one marked with an asterisk is the substrate SrTiO 3 The XRD characteristic peaks (001) and (002). The peak indicated by the arrow on the left side of the characteristic peak of the substrate is SrRuO 3 The characteristic peaks (001) and (002) of the film.

[0081] By means of ionic liquid regulation, a positive voltage is applied to the Pt electrode, so that the ...

Embodiment 2

[0087] Embodiment two: the structural formula is CaRuO 3 h y Preparation and characterization of the hydrogen-containing ruthenium oxide.

[0088] In this example, in (La 0.3 Sr 0.7 )(A l0.6 Ta 0.35 )O 3 (abbreviated as LSAT) (001) on the substrate by sputtering CaRuO by laser pulse deposition 3 The target is CaRuO 3 film. Then CaRuO was regulated by ionic liquid 3 Thin film plus H. see Figure 9 , CaRuO was measured in situ during the regulation process by adding H 3 The change of the peak position of the film around the (002) angle. Such as Figure 9 As shown, in the process of adding H, CaRuO 3 The out-of-plane lattice constant of the film expands under the control of ionic liquid, and the electrochemical reaction of H insertion occurs. The measurement time of each curve is fixed at 10 minutes, that is, CaRuO can be obtained by adding a positive voltage above 3.5V to the ionic liquid for 10 minutes. 3 h y The saturation state of hydrogenation, in which diff...

Embodiment 3

[0091] Embodiment three: the structural formula is Sr 2 RuO 4 h y Preparation and characterization of the hydrogen-containing ruthenium oxide.

[0092] In this embodiment, Sr is sputtered by pulsed laser deposition 2 RuO 4 The target material is LaSrAlO 4 Epitaxially grown Sr on (100) oriented substrates 2 RuO 4 film. And through the way of ionic liquid regulation to prepare Sr 2 RuO 4 h y . For the process of ionic liquid regulation, please refer to Figure 11 , the measurement interval of each curve is 10 minutes, when a positive voltage of 3.5V is applied for more than 10 minutes, Sr can be obtained 2 RuO 4 h y saturation state.

[0093] In the same way, controlling the applied voltage and regulating time in the regulation of ionic liquid can realize the Sr with different hydrogen content. 2 RuO 4 h y , and the regulated hydrogen content can still be maintained after the applied voltage is removed. In addition, the reduction of Sr in a hydrogen atmosphere...

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Abstract

The application provides a hydrogen-containing ruthenium oxide, an electronic device, and a method for regulating the physical properties of the ruthenium oxide. The present application prepares the hydrogen-containing ruthenium oxide through a method of regulating the physical properties of the ruthenium oxide. The structural formula of the hydrogen-containing ruthenium oxide is wherein, A is one or more of alkali metal elements, alkaline earth metal elements and rare earth metal elements, and B is Ru or a metal dopant of Ru, wherein the metal dopant of Ru is The substance can be one or more of Ru and Ti, Mn, Cr, Fe, Ni, Mo, W, Ir, V, Co, Rh, Al, Sc, Zn or Cu, pm+qn+y=2x, m≥0, n>0, x>0, y>0, 1≤p≤3, 2<q≤8. The hydrogen-containing ruthenium oxide greatly changes the properties of the ruthenium oxide and broadens the application prospect of the ruthenium oxide.

Description

technical field [0001] The present application relates to the field of material science, in particular to a hydrogen-containing ruthenium oxide, an electronic device and a method for regulating the physical properties of the ruthenium oxide. Background technique [0002] Transition metal ruthenium oxides belong to strongly correlated systems, which have rich physical properties. For example, SrRuO 3 With ferromagnetism, anomalous Hall effect and photostriction, Sr 2 RuO 4 Has a superconducting effect. In addition, in terms of application, ruthenium oxides such as SrRuO 3 It has excellent metallic properties, and can epitaxially grow on most oxide materials and maintain an atomically flat surface, so it is regarded as a good electrode material. [0003] SrO 3 It can also act as a catalyst in electrochemical reactions (eg, oxygen evolution reaction). [0004] At present, the preparation of new materials based on ruthenium oxide and the corresponding property regulation ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/06H01L43/10H01L43/14H10N52/00H10N52/01
CPCH10N52/101H10N52/01H10N50/85
Inventor 于浦李卓璐沈胜春
Owner TSINGHUA UNIV