8 results about "Oxide electronics" patented technology

The invention discloses a functional oxide film based on a hard mask stripping technology and a high-temperature patterning preparation method, and belongs to the technical field of semiconductor films. The invention provides a stripping process based on a double-layer metal hard mask to solve the problem that high-quality patterning of an oxide film with a high-temperature deposition function is difficult to realize in a traditional process. According to the method, a nickel metal layer which is resistant to high temperature and stable in temperature serves as a bearing layer so as to adapt to the high-temperature environment in the thin film deposition process; and meanwhile, aluminum sensitive to a specific corrosive is adopted as a sacrificial layer, so that subsequent selective wet etching treatment is facilitated. Through the process, after the high-quality functional oxide thin film is deposited at a high temperature, nondestructive stripping of the metal hard mask and the thin film covered by the metal hard mask can be realized by utilizing selective corrosion on the aluminum sacrificial layer, so that the graphical functional oxide thin film which is sharp in edge and free of damage is obtained. The method is simple and convenient in process, low in cost and excellent in compatibility, and an effective technical approach is provided for manufacturing of high-performance oxide electronic devices.

A nonvolatile flash memory cell includes a source electrode, a drain electrode, and a gate column. The drain electrode is cylindrical, the gate column is tubular and surrounds the drain electrode, and the source electrode surrounds the gate column.

The present invention relates to a porous electrode usable in electrical energy storage or manufacturing devices such as lithium-ion batteries. This porous electrode is a porous layer comprising at least one electrode active material P and an oxide electron conductor material.

The application discloses a preparation method and application of a sidewall two-dimensional electron gas, and belongs to the technical field of oxide electronics and micro-nano devices. The method comprises the following steps: growing a BaTiO3 ferroelectric film on a SrTiO3 substrate; preparing source-drain electrodes by using photolithography and magnetron sputtering; forming a sidewall structure by using photolithography and ion bombardment process, and inducing the formation of a two-dimensional electron gas at a BaTiO3 / SrTiO3 interface; and forming a conductive channel at a domain wall by regulating BaTiO3 ferroelectric polarization through an external electric field. Through the synergistic regulation of the sidewall structure and the ferroelectric domain wall, the spatial controllable distribution of the interface two-dimensional electron gas is realized, the electrons are directionally aggregated in the domain wall region, and thus a stable conductive path is constructed on a nanometer scale. The method has simple preparation process, good repeatability, is compatible with existing thin film growth and micro-nano processing technology, and can be applied to the fields of multi-value storage, reconfigurable logic circuits and neuromorphic computing.

This invention discloses a first-principles prediction method for the stability of transition metal layered oxide structures. This invention relates to the field of material stability calculation technology. It constructs and optimizes a multi-state structure model according to standardized rules, presets a dual calculation parameter system, calculates multi-dimensional stability indices, establishes specific criteria, and outputs an engineering report containing modification suggestions through automated post-processing. The advantages of this invention are: by employing standardized structure modeling and initial geometry optimization techniques including ideal, doped, defective, and delithiation states, combined with two sets of standardized calculation parameter systems preset for the electronic structure characteristics of transition metal layered oxides, it simultaneously performs multi-dimensional stability calculations of formation energy, decomposition energy, phase transition barrier, mixing energy, and oxygen vacancy formation energy, and establishes specific quantitative criteria for judgment levels. This solves the shortcomings of existing first-principles calculations, such as fragmentation, lack of unified parameter standards, and lack of targeted criteria.

The application relates to a kind of taste sensor materials based on rare earth nickel-based oxide electronic phase change, and belongs to the field of biosensor materials. The application utilizes the fact that the redox peak current and peak potential generated by the reversible protonation electronic phase change of the rare earth nickel-based strong correlation oxide electronic phase change material in the electrolyte solution containing the measured taste substance are changed with the measured taste substance due to the voltammetry cycle, so as to realize the measurement and perception of the type and concentration of the measured taste substance. The electronic phase change material can obtain protons from the measured solution or discharge protons from the material lattice under the electrolyte solution environment through the voltammetry cycle, trigger the reversible transition between different electronic phases, and thus identify the five kinds of taste substances, i.e. acid, sweet, bitter, salty and fresh. The application also improves the identification ability of certain specific taste substances by loading the polymer film with good conductivity on the surface. The rare earth nickel-based strong correlation oxide electronic phase change material is a detection sensitive material, mainly the metastable phase rare earth nickel-based oxide ReNiO3.

The present application provides a kind of rare earth nickel-based oxide electrode using platinum, gold, palladium as metal, by controlling the work function matching characteristics of metal electrode and rare earth nickel-based oxide, realize the technical method of low resistance ohmic contact to rare earth nickel-based oxide and control hydrogen-induced electronic phase change rate.For the electronic, hole mixed carrier electric transport mechanism of rare earth nickel-based oxide, the present application can realize low resistance ohmic contact under hole dominant transport by high work function metal or alloy contact, also can realize low resistance ohmic contact under electronic dominant transport by low work function metal or alloy contact.In addition, by regulating the work function matching relationship of metal and rare earth nickel-based oxide, control the hydrogen-induced electronic phase change rate and resistivity mutation degree of rare earth nickel-based oxide under hydrogen or mixed hydrogen atmosphere.The present application can be applied to the field of low resistance ohmic contact of mutation type thermistor, field effect transistor, logic device, reconfigurable electronic device, etc.

The application relates to a preparation method of a metastable phase rare earth nickel-based strong correlation oxide material, and belongs to the field of phase change materials and functional materials. The target rare earth nickel-based oxide is used as a homogeneous seed crystal to promote a non-uniform nucleation process and reduce the positive Gibbs free energy of a synthesis reaction, so that a thermodynamic metastable phase rare earth nickel-based oxide ceramic is prepared under high oxygen pressure conditions. By adjusting the types and proportions of Re and B elements, the distortion degree of NiO6 and BO6 octahedrons is influenced, so that the phase transition temperature and the electric transport characteristics of the metastable phase rare earth nickel-based oxide are adjusted; the synthesis pressure of the material can be obviously reduced, the process flow of the prepared material is simplified, and the metastable phase rare earth nickel-based oxide can be prepared in a large amount to meet the preparation requirements of strong correlation logic devices, sudden change type sensitive resistor devices and infrared camouflage devices.