33 results about "Oxide electronics" patented technology

The present invention provides a method for preparing a novel low-resistance p-type SrTiO3 capable of opening the way for oxide electronics in combination with an already developed low-resistance n-type SrTiO3. The method is characterized in that an acceptor and a donor are co-doped into a perovskite-type transition-metal oxide SrTiO3 during crystal growth.

The invention discloses a PIN heterojunction solar cell and a preparation method thereof. The perovskite solar cell comprises a light-transmitting / transparent electrode layer, a transition layer, an electron transfer layer, a light absorbing layer, an electron absorbing layer, a hole transfer layer and a top electrode which are sequentially stacked, wherein the transition layer is made from oxide of nickel; the electron transfer layer is made from quaternary oxide; the light absorbing layer is made from a material with a perovskite structure; the electron absorbing layer is formed by graphene and oxidized graphene; and the hole transfer layer is formed by ternary oxide, and the top electrode is formed by a material with good conductivity. According to the invention, the performance of the perovskite material is effectively utilized, the photoelectric conversion efficiency of the perovskite solar cell is improved by more than 18%, and the solar cell is suitable for batch production.

Provided is an oxide electronic device, including: an oxide substrate; an oxide thin film layer formed on the oxide substrate and containing an oxide that is heterogeneous with respect to the oxide substrate; and a ferroelectric layer formed on the oxide thin film layer and controlling electric conductivity of two-dimensional electron gas (2DEG) generated at an interface between the oxide substrate and the oxide thin film layer. Provided also is a method for manufacturing an oxide electronic device, including: depositing, on an oxide substrate, an oxide that is heterogeneous with respect to the oxide substrate to form an oxide thin film layer; and forming a ferroelectric layer on the oxide thin film layer, wherein the ferroelectric layer controls electric conductivity of 2DEG generated at an interface between the oxide substrate and the oxide thin film layer.

The invention discloses a perovskite solar cell based on a Spiro‑OMeTAD / PbS composite hole transport layer and a preparation method thereof. The perovskite solar cell consists of a transparent conductive substrate, an oxide electron transport layer, a perovskite light absorbing layer, a Spiro‑OMeTAD / PbS composite hole transport layer, and a metal electrode. The perovskite thin-film solar cell adopts an evaporation method with a simple process and can be used for large-scale production to prepare a lead sulfide thin film, which is inserted between Spiro-OMeTAD and the metal electrode layer as a buffer layer. This perovskite solar cell based on the Spiro‑OMeTAD / PbS composite hole transport layer achieved a high photoelectric conversion efficiency of 15.11%. As a buffer layer between the hole transport layer and the metal electrode, lead sulfide has higher hole mobility, better humidity stability and photothermal stability, which can reduce the recombination of electron-hole pairs and improve battery stability. sex. Compared with other buffer layer materials, lead sulfide can improve device performance while protecting the device, and has a positive role in promoting the industrialization of solar cells.

The invention discloses a perovskite solar cell with a high-quality metal oxide electron transport layer and a preparation method thereof, comprising a glass substrate, a transparent conductive oxide electrode and a metal oxide electron transport layer, a perovskite light absorbing layer, a hole transport layer, and a metal electrode. The transparent conductive oxide electrode is a transparent conductive oxide electrode that has been treated with fluorine-based plasma to achieve fluorine doping. The metal oxide electron The transport layer is a fluorine-doped metal oxide electron transport layer that has been treated with fluorine-based plasma, wherein the fluorine-based plasma is generated by bombarding a fluorine-containing element gas with plasma. The invention has the advantages of simple process, good uniformity, good repeatability and high efficiency of the perovskite solar cell.

The invention discloses a perovskite / crystalline silicon laminated solar cell based on a double tunneling compound. The perovskite / crystalline silicon laminated solar cell comprises a grid line, an antireflection layer, a first transparent conductive oxide, n-type microcrystalline silicon or amorphous silicon (p-type microcrystalline silicon or amorphous silicon), a first tunneling compound, a N or P-type monocrystalline silicon wafer, a second tunneling compound, p-type microcrystalline silicon or amorphous silicon (n-type microcrystalline silicon or amorphous silicon), a second transparent conductive oxide, an electron transport layer (hole transport layer), a perovskite light absorption layer, a hole transport layer (electron transport layer), a third transparent conductive oxide, an antireflection layer and a grid line. According to the invention, tunneling compound selective contact is directly formed on the two faces of a N-type or P-type monocrystalline silicon wafer, so that the passivation effect is remarkable, the process is simple, and the cost is low; and the crystalline silicon bottom cell based on the double tunneling compound and the perovskite top cell can easily realize better current matching, interface charge transmission is smoother, and high conversion efficiency and high stability are realized at the same time.

The invention belongs to the technical field of design and preparation of organic solar cell devices, in particular to an inverted organic solar cell with a three-dimensional structure imprinted with a PDMS (polydimethylsiloxane) template on the surface of an active layer and a manufacturing method thereof. An inverted heterojunction organic solar cell, consisting of a cathode layer, an electron transport layer, an active layer, a hole transport layer, and an anode layer, the cathode layer is indium tin oxide ITO, and the electron transport layer has a thickness of 10 ± 0.2 nanometers ZnO, the active layer is PTB7:PC with a thickness of 100±0.2 nm 70 BM, the hole transport layer is MoO with a thickness of 3 ± 0.2 nm 3 , the anode layer is silver with a thickness of 100±0.2 nanometers, and the active layer has a three-dimensional pattern imprinted by a PDMS template. The invention also discloses a specific preparation method.

The invention discloses a novel ternary composite cathode material for a medium and low temperature solid oxide fuel cell, which comprises an oxygen ion conductor oxide, an electronic-oxygen ion mixed conductor oxide and an oxygen catalytic reduction active matter. The material is characterized in that: the cathode material taking perovskite structured oxygen ion and electronic mixed conductor asthe main body has the main function of catalytically reducing the gaseous oxygen at the surface as oxygen ions and transmitting the oxygen ions in an manner of bulk phase to the interface between an electrolyte and the cathode; the conductivity of the oxygen ions is improved by adding the oxygen ion conductor, thereby improving the bulk phase transmission speed of the oxygen ions; the speed of the surface oxygen exchange of the cathode material is obviously increased by adding the oxygen catalytic reduction active matter, thereby greatly enhancing the catalytic activity of the surface oxygen of the cathode material. All effective components of the ternary composite cathode material are synthesized by adopting nitrate by an EDTA-citric acid complex method. Shown in single cell tests, the ternary composite cathode material shows not only excellent comprehensive performance but also excellent compatibility among all the effective components.

The invention discloses a perovskite solar cell with a high-quality electron transport layer and a preparation method thereof. Light absorption layer, hole transport layer, metal electrode, the metal oxide electron transport layer is a metal oxide electron transport layer treated with oxygen free radicals, oxygen free radicals are produced by bombarding oxygen-containing gas with plasma . The invention has the advantages of simple process, good uniformity, good repeatability and high efficiency of the perovskite solar cell.