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Indium-doped barium-titanate material and its preparation method

A technology of indium-doped barium titanate and barium indium titanate, applied in the field of materials, can solve the problems that no one has developed P-type BaTiO3

Inactive Publication Date: 2003-10-08
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But so far, no one has developed p-type BaTiO 3 Material

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Select the chemical formula (2), select x=0.2, and prepare a composite block with a thickness of Φ30mm and a thickness of about 4mm. In an air atmosphere, sinter at a temperature of 600-900°C for 15 hours. A total of 3 times of crushing and grinding-pressing molding-sintering, and finally sintering at a temperature of 1200°C for 48 hours. BaIn 0.2 Ti 0.8 o 3 blocks. Choose this block as the target, choose 10mm×10mm×0.5mm SrTiO 3 As the substrate, use laser molecular beam epitaxy at a substrate temperature of 620°C and an oxygen pressure of 1×10 -4 Under the condition of Pa, BaIn with a film thickness of 5000 mm was prepared 0.2 Ti 0.8 o 3 film.

[0035] High-energy electron diffraction and X-ray diffraction prove that the prepared P-type BaIn x Ti 1-x o 3 The film is a c-oriented single crystal film with a very good epitaxial single crystal phase. The resistivity of the film measured by the standard four-probe method reaches 10 -5 Ω cm, P-type carrier conc...

Embodiment 2

[0037] Make according to embodiment 1, select chemical formula (1) for use, choose x=0.005, prepare composite block material, before raw material is mixed, earlier BaCO 3 Decarburization was carried out under an oxygen atmosphere at a temperature of 850°C for 20 hours to prepare a block.

[0038] Select this block as a target to prepare BaIn with a film thickness of 2000 mm 0.005 Ti 0.995 o 3 film.

Embodiment 3

[0040] Make by embodiment 1, use pulsed laser deposition, under substrate temperature 700 ℃, oxygen pressure 20Pa condition, prepare the BaI of film thickness 4000mm 0.2 Ti 0.8 o 3 film.

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Abstract

The present invention belongs to the field of material. It adopts a doping method for substituting a part of Ti in BaTiO2 by In so as to provide a kind of indium-doped P-type barium titanate (BaInxTi1-xO3) block material and film, in which Ba:Ti:In=1:(1-x):x, x value is 0.005-0.5, when x value is smaller, the film possesses stronger dielectric, ferroelectric and pyroelectric characteristics, and when x valve is increased, the said film possesses stronger conductivity. The difference of doping concentration can make the material possess different optical non-linear characteristics. The invented BaInxTi1-xO3 possesses extensive application, and its p-type property possesses important application in the field of oxide electronics.

Description

technical field [0001] The invention belongs to the field of materials, in particular to a novel indium-doped barium titanate material. Background technique [0002] Barium titanate (BaTiO 3 ) is a multifunctional material, which is a representative ferroelectric with excellent piezoelectric, electro-optic, and nonlinear optical properties. It has a wide range of applications in memory, photodetection, photorefraction, etc. .A, 9(1991) 414). People use BaTiO 3 Methods of doping, enhancing and changing BaTiO 3 Some characteristics of (document 3: Chinese patent, patent number: ZL 93104553.3; document 4: J.Y.Chang, C.F.Chu, C.Y.Huang, R.R.Yueh, J.Appl.Phys., 85 (1999) 2318). Document 3 and Document 4 both prepare single crystal materials, and the doping concentration is only on the order of ppm. We also applied for barium titanate doped niobium n-type BaNb x Ti 1-x o 3 Film material (patent application number: 99108057.2). But so far, no one has developed p-type BaTi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/00C30B23/02C30B29/32
Inventor 吕惠宾戴守愚陈凡赵彤周岳亮陈正豪杨国桢
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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