Indium-doped barium-titanate material and its preparation method

A technology of indium-doped barium titanate and barium indium titanate, applied in the field of materials, can solve the problems that no one has developed P-type BaTiO3

Inactive Publication Date: 2003-10-08
INST OF PHYSICS - CHINESE ACAD OF SCI
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But so far, no one has developed p-type BaTiO 3 Material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Select the chemical formula (2), select x=0.2, and prepare a composite block with a thickness of Φ30mm and a thickness of about 4mm. In an air atmosphere, sinter at a temperature of 600-900°C for 15 hours. A total of 3 times of crushing and grinding-pressing molding-sintering, and finally sintering at a temperature of 1200°C for 48 hours. BaIn 0.2 Ti 0.8 o 3 blocks. Choose this block as the target, choose 10mm×10mm×0.5mm SrTiO 3 As the substrate, use laser molecular beam epitaxy at a substrate temperature of 620°C and an oxygen pressure of 1×10 -4 Under the condition of Pa, BaIn with a film thickness of 5000 mm was prepared 0.2 Ti 0.8 o 3 film.

[0035] High-energy electron diffraction and X-ray diffraction prove that the prepared P-type BaIn x Ti 1-x o 3 The film is a c-oriented single crystal film with a very good epitaxial single crystal phase. The resistivity of the film measured by the standard four-probe method reaches 10 -5 Ω cm, P-type carrier conc...

Embodiment 2

[0037] Make according to embodiment 1, select chemical formula (1) for use, choose x=0.005, prepare composite block material, before raw material is mixed, earlier BaCO 3 Decarburization was carried out under an oxygen atmosphere at a temperature of 850°C for 20 hours to prepare a block.

[0038] Select this block as a target to prepare BaIn with a film thickness of 2000 mm 0.005 Ti 0.995 o 3 film.

Embodiment 3

[0040] Make by embodiment 1, use pulsed laser deposition, under substrate temperature 700 ℃, oxygen pressure 20Pa condition, prepare the BaI of film thickness 4000mm 0.2 Ti 0.8 o 3 film.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
Login to view more

Abstract

The present invention belongs to the field of material. It adopts a doping method for substituting a part of Ti in BaTiO2 by In so as to provide a kind of indium-doped P-type barium titanate (BaInxTi1-xO3) block material and film, in which Ba:Ti:In=1:(1-x):x, x value is 0.005-0.5, when x value is smaller, the film possesses stronger dielectric, ferroelectric and pyroelectric characteristics, and when x valve is increased, the said film possesses stronger conductivity. The difference of doping concentration can make the material possess different optical non-linear characteristics. The invented BaInxTi1-xO3 possesses extensive application, and its p-type property possesses important application in the field of oxide electronics.

Description

technical field [0001] The invention belongs to the field of materials, in particular to a novel indium-doped barium titanate material. Background technique [0002] Barium titanate (BaTiO 3 ) is a multifunctional material, which is a representative ferroelectric with excellent piezoelectric, electro-optic, and nonlinear optical properties. It has a wide range of applications in memory, photodetection, photorefraction, etc. .A, 9(1991) 414). People use BaTiO 3 Methods of doping, enhancing and changing BaTiO 3 Some characteristics of (document 3: Chinese patent, patent number: ZL 93104553.3; document 4: J.Y.Chang, C.F.Chu, C.Y.Huang, R.R.Yueh, J.Appl.Phys., 85 (1999) 2318). Document 3 and Document 4 both prepare single crystal materials, and the doping concentration is only on the order of ppm. We also applied for barium titanate doped niobium n-type BaNb x Ti 1-x o 3 Film material (patent application number: 99108057.2). But so far, no one has developed p-type BaTi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/00C30B23/02C30B29/32
Inventor 吕惠宾戴守愚陈凡赵彤周岳亮陈正豪杨国桢
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap