Indium-doped strontium titanate material and its preparation method

A strontium titanate and raw material technology, applied in the field of indium-doped strontium titanate materials, can solve the problems that no one has developed P-type SrTiO

Inactive Publication Date: 2003-10-08
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
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  • Application Information

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Problems solved by technology

And developed niobium (Nb) SrTiO with conductive and superconducting properties 3 , but so far, no one has developed a p-type SrTiO 3 Materials (Document 3, Arnold Leitner, Charles T. Rogers, John C. Price, David A. Rudman, David R. Herman, Appl. Phys. Lett., 72(1998), 3065)

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Select the chemical formula (2), select x=0.2, and prepare a composite block with a thickness of Φ30mm and a thickness of about 4mm. In an air atmosphere, sinter at a temperature of 600-900°C for 15 hours. A total of 3 times of crushing and grinding-pressing molding-sintering, and finally sintering at a temperature of 1200°C for 48 hours. SrIn 0.2 Ti 0.8 o 3 blocks.

[0033] Choose this block as the target, choose 10mm×10mm×0.5mm SrTiO 3 As the substrate, use laser molecular beam epitaxy at a substrate temperature of 620°C and an oxygen pressure of 1×10 -4 Under the condition of Pa, SrIn with a film thickness of 5000 Å was prepared 0.2 Ti 0.8 o 3 film.

[0034] High-energy electron diffraction and X-ray diffraction prove that the P-type SrIn we prepared 0.2 Ti 0.8 o 3 The film is a c-oriented single crystal film with a very good epitaxial single crystal phase. The resistivity of the film measured by the standard four-probe method reaches 10 -4 Ω cm, P-type...

Embodiment 2

[0036] Make according to embodiment 1, select chemical formula (1) for use, choose x=0.005, prepare composite block material, before raw material is mixed, earlier SrCO 3 Decarbonize under oxygen atmosphere and 850°C for 20 hours to prepare block.

[0037] Select this block as a target to prepare SrIn with a film thickness of 2000 Å 0.005 Ti 0.995 o 3 film.

Embodiment 3

[0039] Manufactured according to Example 1, with pulsed laser deposition, under the conditions of substrate temperature 700 ° C and oxygen pressure 20 Pa, SrI with a film thickness of 4000 Å was prepared. 0.2 Ti 0.8 o 3 film.

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Abstract

The present invention relates to the field of materials. It adopts a doping method for substituting a part of Ti in SrTiO2 by In so as to provide a kind of indium-doped P-type strontium titanate (Sr InxTi1-xO3) block material, film and its preparation method, in which Sr:Ti:In=1:(1-x):x, x valus is 0.5%-50%, when the x value is smaller, the film possesses the dielectric and pyroelectric characteristics, and when the x valve is increased, its conductivity is raised, the said film is changed into a film material with matal oxide conductivity. The invented SrInxTi1-XO3 not only possesses extensive application in the field of detertor and conductive electrode, but also possesses important applicatino in the field of oxide electronics.

Description

technical field [0001] The invention belongs to the field of materials, in particular to a novel indium-doped strontium titanate material. Background technique [0002] Cubic strontium titanate (SrTiO 3 ) crystals are used as infrared optical materials to make optical components such as special optical windows, prisms and infrared optical lenses. Since the advent of high-temperature superconductors, there has been a great deal of interest in bulk, thin-film, and superlattice materials of oxides. SrTiO 3 Crystals are widely used as substrates for preparing high-temperature superconducting and other oxide thin films. So far, for SrTiO 3 The development of crystals and thin films is still in progress (Document 1, Michio Naito, Hideki Yamamoto, Hisashi Sato, Physica C, 305 (1998), 233). Some people use SrTiO 3 Materials Preparation of dielectric and ferroelectric superlattices (Document 2, H. Tabata and T. Kawai, Appl. Phys. Lett., 70 (1997), 321). And developed niobium (...

Claims

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Application Information

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IPC IPC(8): C04B35/47C30B23/02C30B25/02C30B29/30
Inventor 戴守愚吕惠宾赵彤陈凡陈正豪周岳亮杨国桢
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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