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Top-emitting quantum dot electroluminescent diode and preparation method thereof

A quantum dot light emitting and quantum dot technology, which is applied in the direction of circuits, electrical components, and electrical solid devices, can solve problems such as difficulty in electron injection, energy level mismatch between transparent cathode and electron transport layer, and performance degradation of light-emitting diode devices. Improve the effect of top-emitting quantum dot electroluminescent diodes, mature and controllable methods, and simple processes

Inactive Publication Date: 2020-05-12
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a top-emission quantum dot electroluminescent diode and its preparation method, aiming to solve the problem of the existing top-emission quantum dot electroluminescent diode due to the mismatch of energy levels between the transparent cathode and the electron transport layer. Electron injection is difficult, leading to the problem of degraded performance of light-emitting diode devices

Method used

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  • Top-emitting quantum dot electroluminescent diode and preparation method thereof
  • Top-emitting quantum dot electroluminescent diode and preparation method thereof
  • Top-emitting quantum dot electroluminescent diode and preparation method thereof

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preparation example Construction

[0053] Another aspect of the embodiments of the present invention provides a method for preparing a top-emission quantum dot electroluminescent diode, comprising the following steps:

[0054] S01. Provide a substrate, and prepare a reflective anode on the substrate;

[0055] S02. preparing a quantum dot luminescent layer on the reflective anode;

[0056] S03. Prepare a first electron transport layer on the quantum dot light-emitting layer, and prepare a second electron transport layer on the first electron transport layer;

[0057] S04. Prepare a transparent cathode on the second electron transport layer.

[0058] The top-emission quantum dot electroluminescent diode provided in the embodiment of the present invention is based on the preparation of the conventional top-emission quantum dot electroluminescent diode, and before preparing the cathode, the quantum dot light-emitting layer is sequentially prepared A first electron transport layer of an electron transport material a...

Embodiment 1

[0065] A top-emission quantum dot electroluminescent diode, such as figure 1 As shown, it includes a substrate 10 , a reflective anode 100 , a hole transport layer 120 , a quantum dot light-emitting layer 130 , a first electron transport layer 140 , a second electron transport layer 150 , and a transparent cathode 160 from bottom to top. Wherein, the substrate 10 can be glass or a flexible substrate, such as PET, PI and other materials, the reflective electrode 100 adopts an ITO / Ag / ITO composite structure, the material of the hole transport layer 120 is TFB, and the quantum dot light-emitting layer 130 adopts red For CdS / ZnS core-shell quantum dots, the first electron transport layer 140 is made of ZnO nanoparticle material, the second electron transport layer 150 is made of TBPi, and the cathode layer 160 is made of IZO.

[0066] The preparation method of the top emission type quantum dot electroluminescent diode comprises the following steps:

[0067] 1) Take the substrate ...

Embodiment 2

[0075] A kind of top emission type quantum dot electroluminescence diode, the difference with embodiment 1 is that (structure sees figure 1 ), the second electron transport layer adopts a doped structure, such as TBPi doped with LiF, with a doping concentration of 5%, and is produced by a double-source co-evaporation method with a thickness of 20nm.

[0076] In the embodiment of the present invention, doping LiF in TPBi as the material of the second electron transport layer can effectively improve the injection of electrons from the cathode, improve the electrical conductivity and charge mobility of TPBi, thereby improving the basic Structured device performance.

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Abstract

The invention provides a top-emitting quantum dot electroluminescent diode, which comprises a reflection anode and a transparent cathode which are oppositely arranged, a quantum dot light-emitting layer arranged between the reflection anode and the transparent cathode, and a composite electron transmission lamination layer arranged between the quantum dot light-emitting layer and the transparent cathode, wherein the composite electron transmission lamination layer comprises a first electron transmission layer arranged between the quantum dot light-emitting layer and the transparent cathode, and a second electron transmission layer arranged between the transparent cathode and the first electron transmission layer, the material of the first electron transmission layer at least contains one inorganic oxide electron transmission material, and the material of the second electron transmission layer at least contains one organic electron transmission material.

Description

technical field [0001] The invention belongs to the field of display technology, in particular to a top-emitting quantum dot electroluminescence device and a preparation method thereof. Background technique [0002] Quantum Dots (QDs), also known as nanocrystals, are quasi-zero-dimensional nanomaterials, composed of a limited number of atoms, with at least two dimensions on the order of nanometers, and appearing like a very small point or rod For objects / wires, the internal electron movement is restricted in two-dimensional space, and the quantum confinement effect is particularly significant. When excited by light or electricity, nanocrystalline semiconductor materials will emit a spectrum with a very narrow half-peak width (usually less than 40nm), and the luminous color is mainly determined by the particle size. Stability and other characteristics. [0003] Quantum Dot Light Emitting Diode (QLED) devices fabricated by utilizing the electroluminescent properties of quant...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/54H01L51/56
CPCH10K50/115H10K50/166H10K50/81H10K50/828H10K2102/00H10K71/00
Inventor 谢相伟
Owner TCL CORPORATION
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