Perovskite solar cell based on Spiro-OMeTAD/CuxS composite hole transport layer and preparation method thereof

A technology of hole transport layer and solar cell, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of poor stability and low mobility of organic hole transport layer, and achieve improved water stability and effective It is beneficial to the application and promotion, and the effect of improving photoelectric conversion efficiency and stability

Active Publication Date: 2016-10-12
WUHAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The problem to be solved by the present invention is to provide a perovskite thin film photovol

Method used

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  • Perovskite solar cell based on Spiro-OMeTAD/CuxS composite hole transport layer and preparation method thereof
  • Perovskite solar cell based on Spiro-OMeTAD/CuxS composite hole transport layer and preparation method thereof
  • Perovskite solar cell based on Spiro-OMeTAD/CuxS composite hole transport layer and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] (1) Cleaning of transparent conductive substrate: In the experiment, the FTO conductive glass substrate should be cleaned and dried. Firstly, cut the conductive glass to the required size with a glass knife. After cutting, clean it with detergent, and then rinse it with deionized water. Then put it into an ultrasonic cleaner, clean it with acetone, ethanol, and ionized water in sequence, and finally dry it with nitrogen, so that the transparent conductive substrate with a clean surface required for the experiment can be obtained.

[0040] (2) Preparation of metal oxide electron transport layer: 0.1mol / L of SnCl 2 2H 2 O ethanol solution was stirred for 30 minutes to obtain the metal oxide precursor solution; the metal oxide precursor solution with different concentrations configured was evenly spin-coated on the conductive substrate with a glue machine, and then heated at 180 degrees Celsius after being shaken annealing for one hour to obtain a metal oxide electron tr...

Embodiment 2

[0046] (1) Cleaning of transparent conductive substrate: same as embodiment 1.

[0047] (2) Preparation of metal oxide electron transport layer: same as Example 1.

[0048] (3) Perovskite light-absorbing layer (CH 3 NH 3 PB 3 layer) preparation: with embodiment 1.

[0049] (4) Preparation of hole transport layer: the preparation steps of the organic hole transport layer (Spiro-OMeTAD layer) are the same as in Example 1, followed by vacuum evaporation of one layer of inorganic hole transport material Cu on the Spiro-OMeTAD layer. x S: Weigh 3mg of copper sulfide powder, and the background vacuum of the vacuum coating machine to be heated and evaporated is better than 10 -4 Pa, heating current 40A, evaporation time 30s.

[0050] (5) Preparation of the metal electrode layer: the prepared sample of the hole transport layer was placed in a vacuum evaporation device to evaporate a layer of gold thin film electrode through a thermal evaporation process.

[0051] (6) Test: at AM...

Embodiment 3

[0053] (1) Cleaning of transparent conductive substrate: same as embodiment 1.

[0054] (2) Preparation of metal oxide electron transport layer: same as Example 1.

[0055] (3) Perovskite light-absorbing layer (CH 3 NH 3 PB 3 layer) preparation: with embodiment 1.

[0056] (4) Preparation of the hole transport layer: directly evaporate a layer of inorganic hole transport material Cu on the perovskite light-absorbing layer x S. Weigh 30mg of copper sulfide powder, and wait for the background vacuum of the vacuum coating machine to be thermally evaporated to be better than 10 -4 Pa, heating current 30A, evaporation time 3min.

[0057] (5) Preparation of the metal electrode layer: the prepared sample of the hole transport layer was placed in a vacuum evaporation device to evaporate a layer of gold thin film electrode through a thermal evaporation process.

[0058] (6) Test: at AM 1.5, the effective area of ​​the active layer is 0.09cm 2 The prepared perovskite solar cells...

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Abstract

The invention discloses a perovskite solar cell based on a Spiro-OMeTAD/CuxS composite hole transport layer and a preparation method thereof. The solar cell comprises a transparent conductive substrate, an oxide electron transport layer, a perovskite light absorption layer, a composite hole transport layer, and metal electrodes. The composite hole transport layer is obtained by the following steps: spin-coating a perovskite light absorption layer with a Spiro-OMeTAD layer, and depositing high-purity copper sulfide powder on the Spiro-OMeTAD layer through vacuum thermal evaporation to get a composite hole transport layer composed of a p-type CuxS film and a Spiro-OMeTAD layer, wherein 1<=x<=2. The hole carrier mobility of the composite hole transport layer can be up to 0.1cm<2>V.s<-1>, the composite hole transport layer is very hydrophobic, the contact angle is up to 92 degrees, and the water stability of devices is greatly improved. By employing the composite hole transport layer, the photoelectric conversion efficiency of planar perovskite film cells can be up to 14%, and the attenuation of devices after 1000-hour use is less than 10%, which are better than those of devices employing a Spiro-OMeTAD or CuxS hole transport layer alone.

Description

technical field [0001] The present invention relates to a kind of based on Spiro-OMeTAD / Cu x The invention relates to a perovskite solar cell with an S composite hole transport layer and a preparation method thereof, belonging to the field of optoelectronic materials and devices. Background technique [0002] Since the 21st century, with the development of society and the improvement of human living standards, human demand for energy has increased day by day, and non-renewable energy sources such as coal, oil, and natural gas are gradually exhausted. The energy problem urgently needs to be solved. Solar energy has many advantages such as cleanness, greenness, inexhaustibility, etc., so it has broad development prospects. At present, among all kinds of solar cells, the preparation technology of silicon-based solar cells is relatively mature, and the photoelectric conversion efficiency exceeds 20%. However, the high price limits its further widespread application; the inorg...

Claims

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Application Information

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IPC IPC(8): H01L51/44H01L51/46H01L51/42H01L51/48
CPCH10K71/12H10K85/60H10K30/80H10K30/00Y02E10/549
Inventor 方国家雷红伟郑小璐杨光
Owner WUHAN UNIV
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