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Hydrogen-containing ruthenium oxide, electronic device, and method for regulating and controlling physical properties of ruthenium oxide

A ruthenium oxide and electronic device technology, which is applied in the field of hydrogen-containing ruthenium oxide, electronic devices and the regulation of physical properties of ruthenium oxide, and can solve the problems of limited changes in components and the like

Active Publication Date: 2020-04-07
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Based on this, it is necessary to provide a method for regulating the physical properties of hydrogen-containing ruthenium oxides, electronic devices, and ruthenium oxides in view of the complex preparation process and limited composition changes of new materials based on ruthenium oxides.

Method used

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  • Hydrogen-containing ruthenium oxide, electronic device, and method for regulating and controlling physical properties of ruthenium oxide
  • Hydrogen-containing ruthenium oxide, electronic device, and method for regulating and controlling physical properties of ruthenium oxide
  • Hydrogen-containing ruthenium oxide, electronic device, and method for regulating and controlling physical properties of ruthenium oxide

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Experimental program
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Embodiment 1

[0079] Embodiment 1: structural formula is SrRuO 3 H y Preparation and characterization of the ruthenium hydride-containing oxide.

[0080] In this embodiment, SrRuO is sputtered by means of pulsed laser deposition 3 Target, in SrTiO 3 Deposition growth of SrRuO 3 film. SrRuO 3 The structure of the thin film was characterized by X-ray diffractometer (abbreviation XRD for X-ray diffraction). by SrRuO 3 Analysis of thin film diffraction patterns to obtain material composition and material structure information. XRD measurement results are as image 3 shown. image 3 Marked with an asterisk is the substrate SrTiO 3 XRD characteristic peaks (001) and (002). The peak indicated by the arrow to the left of the substrate characteristic peak is SrRuO 3 Characteristic peaks (001) and (002) of the thin film.

[0081] By means of ionic liquid regulation, a positive voltage is applied to the Pt electrode, so that the SrRuO 3 The surface electrode of the film is at a low poten...

Embodiment 2

[0087] Embodiment 2: structural formula is CaRuO 3 H y Preparation and characterization of the ruthenium hydride-containing oxide.

[0088] In this embodiment, in (La 0.3 Sr 0.7 )(A l0.6 Ta 0.35 )O 3 (abbreviated as LSAT) (001) substrate sputtering CaRuO by means of laser pulse deposition 3 Target to get CaRuO 3 film. Then, the CaRuO was regulated by ionic liquid. 3 Add H to the film. see Figure 9 , CaRuO was measured in situ during the regulation of H addition. 3 Variation of the peak position of the film around the (002) angle. like Figure 9 As shown, in the process of adding H, CaRuO 3 The out-of-plane lattice constant of the film is expanded under the control of ionic liquid, and the electrochemical reaction of H insertion occurs. The measurement time of each curve is fixed at 10 minutes, that is, CaRuO can be obtained by adding a positive voltage above 3.5V to the ionic liquid for 10 minutes. 3 H y The saturated state of hydrogenation, during which diff...

Embodiment 3

[0091] Embodiment three: structural formula is Sr 2 RuO 4 H y Preparation and characterization of the ruthenium hydride-containing oxide.

[0092] In this embodiment, Sr is sputtered by means of pulsed laser deposition 2 RuO 4 Target in LaSrAlO 4 Epitaxially grown Sr on a (100) oriented substrate 2 RuO 4 film. Sr was prepared by ionic liquid control. 2 RuO 4 H y . For the process of ionic liquid regulation, please refer to Figure 11 , the measurement interval of each curve is 10 minutes, when a positive voltage of 3.5V is applied for more than 10 minutes, Sr can be obtained 2 RuO 4 H y the saturation state.

[0093] In the same way, controlling the applied voltage and regulation time in ionic liquid regulation can achieve Sr with different hydrogen content. 2 RuO 4 H y , and the regulated hydrogen content can still be maintained after removing the applied voltage. In addition, Sr can also be achieved by hydrogen atmosphere reduction. 2 RuO 4 For the hydro...

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Abstract

The invention provides a hydrogen-containing ruthenium oxide, an electronic device and a method for regulating and controlling the physical property of the ruthenium oxide. The hydrogen-containing ruthenium oxide is prepared by adopting the method for regulating and controlling the physical properties of the ruthenium oxide. The structural formula of the ruthenium hydroxide is shown in the specification, a is one or more of an alkali metal element, an alkaline earth metal element and a rare earth metal element, wherein B is a Ru or a metal dopant of Ru, the metal dopant of Ru can be one or more of Ru and Ti, Mn, Cr, Fe, Ni, Mo, W, Ir, V, Co, Rh, Al, Sc, Zn or Cu, pm+qn+y=2x, m>=0, n>0, x>0, y>0, 1<=p<=3 and 2<q<=8. According to the hydrogen-containing ruthenium oxide, the property of the ruthenium oxide is greatly changed, and the application prospect of the ruthenium oxide is broadened.

Description

technical field [0001] The present application relates to the field of material science, in particular to a ruthenium hydroxide-containing oxide, an electronic device and a method for regulating the physical properties of the ruthenium oxide. Background technique [0002] Transition metal ruthenium oxides belong to strongly correlated systems, and these oxides have rich physical properties. For example, SrRuO 3 Ferromagnetic, anomalous Hall effect and photostrictive, Sr 2 RuO 4 Has a superconducting effect. In addition, in terms of applications, ruthenium oxides such as SrRuO 3 It has excellent metallicity and can be epitaxially grown on most oxide materials and maintain an atomically flat surface, so it is regarded as a good electrode material. [0003] SrRuO 3 It can also function as a catalyst in electrochemical reactions (eg, oxygen evolution reactions). [0004] At present, the preparation of new materials based on ruthenium oxide and the corresponding properties...

Claims

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Application Information

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IPC IPC(8): H01L43/06H01L43/10H01L43/14H10N52/00H10N52/01
CPCH10N52/101H10N52/01H10N50/85
Inventor 于浦李卓璐沈胜春
Owner TSINGHUA UNIV
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