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Perovskite solar cell with high-quality metal oxide electron transport layer and preparation method thereof

A technology of electron transport layer and solar cell, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problem of not being able to simultaneously and effectively reduce the density of defect states and the density of surface charge traps, so as to shorten the production cycle and avoid the cleaning process , The effect of surface flatness improvement

Active Publication Date: 2017-11-21
SHAANXI NORMAL UNIV
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  • Summary
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Problems solved by technology

However, the reported control methods for the electron transport layer cannot simultaneously and effectively reduce its defect state density and surface charge trap density.

Method used

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  • Perovskite solar cell with high-quality metal oxide electron transport layer and preparation method thereof

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preparation example Construction

[0030] A method for preparing a perovskite solar cell with a high-quality metal oxide electron transport layer, comprising the following steps:

[0031] Step 1: Form a transparent conductive oxide electrode 2 on the glass substrate 1, and the transparent conductive oxide electrode 2 is formed by any one of the magnetron sputtering method, electron beam deposition method, spin coating method and non-vacuum chemical deposition method Prepared, the transparent conductive oxide electrode 2 is any material among fluorine-doped tin oxide FTO, indium tin oxide ITO, aluminum-doped zinc oxide AZO, and gallium-doped zinc oxide GZO;

[0032] Step 2: After preparing the transparent conductive oxide electrode 2, use the plasma-enhanced chemical vapor deposition method to bombard the plasma of fluorine-containing elements to generate fluorine radicals in the chemical vapor deposition system, and carry out the treatment on the surface and body of the transparent conductive oxide electrode 2. ...

Embodiment 1

[0038] A method for preparing a perovskite solar cell with a high-quality metal oxide electron transport layer, comprising the steps of:

[0039] 1) Preparation of transparent conductive oxide electrode 2: based on figure 1 The structure uses the magnetron sputtering method to prepare the transparent conductive oxide electrode 2 on the glass substrate 1. Taking the target material fluorine-doped tin oxide FTO as an example, the deposition gas atmosphere is argon, the ratio is 30 sccm, and the deposition temperature is 23 °C , the deposition power is 180W, the deposition pressure is 1Pa, and the deposition thickness is 100nm.

[0040] 2) Treating the transparent conductive oxide electrode 2 with fluorine-based plasma: After step 1), the transparent conductive oxide electrode 2 is doped with fluorine by plasma enhanced chemical vapor deposition, and the gas atmosphere is tetrafluoromethane, The flow rate is 200sccm, the working pressure is 80Pa, the working power is 60W, the wo...

Embodiment 2

[0047] A method for preparing a perovskite solar cell with a high-quality metal oxide electron transport layer, comprising the steps of:

[0048] 1) Preparation of transparent conductive oxide electrode 2: based on figure 1 Structure The transparent conductive oxide electrode 2 is prepared on the glass substrate 1 by non-vacuum chemical vapor deposition method. Taking aluminum-doped zinc oxide AZO as an example, the precursors are aluminum acetate and zinc acetate, and the solvents are water and methanol, respectively. 90 mL, stirred at room temperature for 3 hours, and then filtered through a 0.2 μm filter. The deposition conditions are as follows, the deposition gas is air, the deposition temperature is 350° C., and the deposition thickness is 100 nm.

[0049] 2) Treating the transparent conductive oxide electrode 2 with fluorine-based plasma: After step 1), the transparent conductive oxide electrode 2 is doped with fluorine by plasma enhanced chemical vapor deposition, and...

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Abstract

The invention discloses a perovskite solar cell with a high-quality metal oxide electron transport layer and a preparation method thereof. The perovskite solar cell comprises a glass substrate, a transparent conductive oxide electrode, a metal oxide electron transport layer, a perovskite light absorption layer, a hole transport layer and a metal electrode, wherein the transparent conductive oxide electrode, the metal oxide electron transport layer, the perovskite light absorption layer, the hole transport layer and the metal electrode are sequentially arranged on the glass substrate is a stacked manner, the transparent conductive oxide electrode realizes fluorine doping through fluorine-based plasma treatment, the metal oxide electron transport layer realizes fluorine doping through fluorine-based plasma treatment, and the fluorine-based plasma is generated by bombarding a fluorine-containing gas with a plasma. The perovskite solar cell is simple in process, good in uniformity and good in repeatability, and the perovskite solar cell is high in efficiency.

Description

technical field [0001] The invention relates to the field of photovoltaics, in particular to a perovskite solar cell with a high-quality metal oxide electron transport layer and a preparation method thereof. Background technique [0002] At present, fossil energy is depleting day by day and pollutes the environment in the process of use. The development of new energy has become an important guarantee for the sustainable development of human civilization, and solar photovoltaic is one of the most promising solutions. Improving the photoelectric conversion efficiency of solar cells to reduce the cost of photovoltaic power generation is one of the core research topics in the field of photovoltaics. Among them, the organic-inorganic hybrid halogen perovskite material was first used in solar cells in 2009. In just a few years, its photoelectric conversion efficiency has soared from 3.8% at that time to more than 22% today. The efficiency of perovskite solar cells has surpassed t...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/48H01L21/223
CPCH01L21/2236H10K30/451H10K30/82H10K2102/00Y02E10/549Y02P70/50
Inventor 王大鹏赵文静王康刘生忠
Owner SHAANXI NORMAL UNIV
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