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AlGaN-based homogeneously integrated optoelectronic chip and preparation method thereof

A technology for optoelectronic chips and quantum wells, which is applied in the manufacturing of circuits, electrical components, and final products, etc., can solve the problems of reducing the working efficiency of devices, serious separation of detection and emission bands, etc. The effect of big data transfer speed

Active Publication Date: 2020-04-10
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, for AlGaN-based homogeneous integrated optoelectronic chips with the same composition and quantum well structure, the phenomenon of separation between detection and light-emitting bands becomes more serious, which reduces the working efficiency of the device.

Method used

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  • AlGaN-based homogeneously integrated optoelectronic chip and preparation method thereof
  • AlGaN-based homogeneously integrated optoelectronic chip and preparation method thereof
  • AlGaN-based homogeneously integrated optoelectronic chip and preparation method thereof

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preparation example Construction

[0033] see figure 1 , the invention provides a method for preparing an AlGaN-based homogeneously integrated optoelectronic chip, comprising:

[0034] S110. Select a patterned substrate with a bevel angle on the C surface, and the angle of the bevel angle is greater than 0.1° and less than 90°;

[0035] Specifically, in one embodiment, the patterned substrate material is sapphire, silicon or silicon carbide.

[0036] S120, epitaxially growing an AlN template on a patterned substrate;

[0037] The means of epitaxial growth of AlN template materials include but not limited to metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE) and other epitaxial growth technologies; the active area of ​​the optoelectronic chip structure is mainly a quantum well structure;

[0038] S130, growing an AlGaN-based device structure on an AlN template;

[0039] Specifically, in one embodiment, the AlGaN-based device structure includes n-A...

Embodiment 1

[0051] refer to Figure 2a-2c , three views of the device structure provided in this embodiment, in this embodiment, the preparation method of the AlGaN-based homogeneous integrated optoelectronic chip provided by the present invention includes the following steps:

[0052] Select the desired patterned substrate 21 of the epitaxial AlGaN material, the c-plane (ie (0001) plane) sapphire patterned substrate, and the bevel angle is 0.2° in the direction along the m-plane.

[0053] Using a two-step growth method, AlN material is epitaxially grown as template 22 .

[0054] Epitaxially grow n-AlGaN material 23 on the AlN template to form AlGaN material wing regions and mesa regions. Since the mobility of Ga atoms is greater than that of Al atoms, it is more conducive to moving to the mesa region for nucleation and growth. Therefore, the Al composition of the AlGaN material in the mesa region is relatively low. Low.

[0055] The AlGaN quantum well structure 24 is epitaxially grown ...

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Abstract

The invention provides a preparation method of an AlGaN-based homogeneously integrated optoelectronic chip. The method comprises: selecting a patterned substrate of which the C surface is provided with a chamfer angle which is greater than 0.1 degree and less than 90 degrees; epitaxially growing an AlN template on the patterned substrate; growing an AlGaN-based device structure on the AlN template; positioning an AlGaN material wing region and a mesa region which are epitaxially grown on the patterned substrate; and preparing an optical detection device, a light-emitting device and an opticalwaveguide structure in corresponding areas to obtain the AlGaN-based homogeneous integrated optoelectronic chip. The method can improve the working efficiency of the electronic chip.

Description

technical field [0001] The invention relates to the field of semiconductor technology and communication, in particular to an AlGaN-based homogeneously integrated optoelectronic chip and a preparation method thereof. Background technique [0002] Homogeneous integrated optoelectronic chip refers to a chip that integrates light-emitting devices, optical waveguides, and photodetection devices. The active regions of the light emission and photodetection devices are all quantum well structures and are prepared by the same process. The chip has broad application prospects in the fields of optical communication systems, optical interconnection memory systems, photoelectric processor systems and the like. Its working principle is to use the photodetector in the chip to detect the light signal, modulate the detection signal at the same time, and then output the signal in the form of light through the light-emitting device, so as to realize the transmission of the signal. Since the o...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/153H01L31/0352
CPCH01L31/035236H01L31/153H01L31/1848H01L31/1852Y02P70/50
Inventor 黎大兵贲建伟孙晓娟蒋科石芝铭贾玉萍
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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