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Chemical mechanical polishing solution of phase-change material composite abrasive and application thereof

A composite abrasive, chemical-mechanical technology, applied in the field of microelectronics, to achieve the effect of good surface quality, improved stability, and avoidance of residues

Inactive Publication Date: 2020-04-14
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And the traditional phase change material GST polishing process is not suitable for the new material Cr x -Sb 2 Te 3 (0x -Sb 2 Te 3 (0

Method used

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  • Chemical mechanical polishing solution of phase-change material composite abrasive and application thereof
  • Chemical mechanical polishing solution of phase-change material composite abrasive and application thereof
  • Chemical mechanical polishing solution of phase-change material composite abrasive and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] The preparation of polishing liquid A: the polishing liquid contains 10wt% silicon oxide and cerium oxide polishing abrasive, the particle size is 30nm, add hydrogen peroxide 4.0wt%, potassium hydroxide 0.5wt% to adjust the pH to 8, sodium polyacrylate 0.1wt %, citric acid 0.05wt%, and the rest is deionized water.

Embodiment 2

[0025] Preparation of polishing liquid B: the polishing liquid contains 40wt% silicon oxide and cerium oxide polishing abrasives, the particle size is 20-80nm, adding 4.0wt% ferric chloride, 0.5wt% sodium hydroxide to adjust the pH to 9, hexadecane 0.1wt% trimethylammonium bromide, 0.05wt% acetic acid, and deionized water as the rest.

Embodiment 3-7

[0027]

[0028]

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PUM

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Abstract

The invention discloses a chemical mechanical polishing solution of a phase-change material composite abrasive, and the chemical mechanical polishing solution is used for a Crx-Sb2Te3 phase-change material polishing process in a phase-change memory device. As Crx-Sb2Te3 is a ternary metal alloy, the film hardness is relatively low, and scratches are easily caused by using a single abrasive material. The novel composite abrasive polishing solution can well solve the problem that the surface of a film is scratched. The composite abrasive polishing solution for CMP comprises the following components: an oxidant, a surfactant, a silicon dioxide and cerium oxide abrasive, a pH regulator and deionized water. The method is characterized in that the two abrasives complement each other, a synergistic effect is generated to achieve different effects on the CST thin film, the thin film removal rate can be more controllable, the surface quality is better, and the requirement for preparing the CMPis met.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a chemical mechanical polishing liquid, in particular to a phase change material Cr x -Sb 2 Te 3 (0<x<0.5) chemical polishing fluid. [0002] technical background [0003] In recent years, the phase-change memory (PCM) structure has developed from a traditional T-shaped structure to a constrained structure. This confined structure is to deposit the phase change material in the pore, and the phase change material is connected to the electrode at the other end of the pore, and the current passes through the channel to generate Joule heat to read the resistance state of the unit. [0004] Sb 2 Te 3 The crystallization rate of the system is faster than that of the traditional phase change material GST, and it is easier to meet the operation speed requirements of replacing DRAM, but its crystallization temperature is low, and it cannot maintain data for a long time. I...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02H01L45/00B24B1/00
CPCC09G1/02B24B1/00H10N70/20H10N70/841H10N70/011
Inventor 张楷亮王路广王芳左劲松黄金荣胡凯
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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