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A kind of gan rectifier based on cu substrate and preparation method thereof

A rectifier and substrate technology, applied in the field of Cu-substrate-based GaN rectifier and its preparation, achieves the effects of stable performance, clear hetero interface and excellent crystal quality

Active Publication Date: 2021-06-08
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, more than half of electronic product loss problems are still closely related to temperature
Therefore, the thermal stability of the device needs to be solved urgently.

Method used

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  • A kind of gan rectifier based on cu substrate and preparation method thereof
  • A kind of gan rectifier based on cu substrate and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0029] A method for preparing a GaN rectifier based on a Cu substrate, comprising the steps of:

[0030] S1 At room temperature, the single crystal Cu(111) substrate was cleaned and dried, then placed in a rapid annealing furnace, fed with 30 sccm argon, and annealed at 400°C to obtain a clean single crystal Cu substrate, and sent to In a pulsed laser deposition (PLD) chamber;

[0031] S2 uses the general process method of electron beam evaporation to selectively deposit a 5 μm graphite layer on a 2-inch GaN target. The target area covered by the graphite layer and the target area not covered by the graphite layer are distributed axisymmetrically, and the area ratio is 2. .

[0032] S3 uses the method of pulsed laser deposition (PLD), setting the energy of the PLD laser to 380mJ, the frequency at 20Hz, the growth temperature at 600°C, the distance between the target and the substrate at 4mm, and the cavity pressure at 4mTorr. 111) A 2μm carbon-doped GaN high-resistance layer...

Embodiment 2

[0038] A method for preparing a GaN rectifier based on a Cu substrate, comprising the steps of:

[0039] S1 At room temperature, the single crystal Cu(111) substrate was cleaned and dried, then placed in a rapid annealing furnace, fed with 30 sccm argon, and annealed at 400°C to obtain a clean single crystal Cu substrate, and sent to In a pulsed laser deposition (PLD) chamber;

[0040] S2 uses the general process method of electron beam evaporation to selectively deposit a 6 μm graphite layer on a 2-inch GaN target. The target area covered by the graphite layer and the target area not covered by the graphite layer are distributed axisymmetrically, and the area ratio is 2. .

[0041] S3 Through the general process method of pulsed laser deposition (PLD), set the energy of the PLD laser to 400mJ, maintain the frequency at 25Hz, maintain the growth temperature at 640°C, maintain the distance between the target and the substrate at 4.5mm, and maintain the cavity pressure at 4.5mT...

Embodiment 3

[0047] A method for preparing a GaN rectifier based on a Cu substrate, comprising the steps of:

[0048] S1 At room temperature, the single crystal Cu(111) substrate was cleaned and dried, then placed in a rapid annealing furnace, fed with 30 sccm argon, and annealed at 400°C to obtain a clean single crystal Cu substrate, and sent to In a pulsed laser deposition (PLD) chamber;

[0049] S2 uses the general process method of electron beam evaporation to selectively deposit a 4.5 μm graphite layer on a 2-inch GaN target. The target area covered by the graphite layer and the target area not covered by the graphite layer are distributed axisymmetrically, and the area ratio is 2.

[0050] S3 Through the general process method of pulsed laser deposition (PLD), set the PLD laser energy to 350mJ, maintain the frequency at 30Hz, maintain the growth temperature at 680°C, maintain the distance between the target and the substrate at 5mm, and maintain the cavity pressure at 5mTorr. A 2μm...

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Abstract

The invention discloses a method for preparing a GaN rectifier based on a Cu substrate, which comprises a Cu substrate, a highly doped GaN high resistance layer, a GaN buffer layer, an AlGaN barrier layer and SiO from bottom to top 2 The surface passivation layer also includes a Schottky contact electrode and an N-type ohmic contact electrode, and the Schottky contact electrode and the N-type ohmic contact electrode are arranged on the upper surface of the AlGaN barrier layer, wherein an external electrode is applied between the two electrodes. Under voltage conditions, a transverse electric field is formed, and the two-dimensional electron gas is transported along the interface to form a current. The invention does not produce complicated operations and other harmful by-products in the preparation process, and provides a solution for the thermal stability problem of future high-power electronic devices.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a GaN rectifier based on a Cu substrate and a preparation method thereof. Background technique [0002] As a representative of the third-generation semiconductor material, GaN has many excellent characteristics, such as high concentration of two-dimensional electron gas, large band gap, high breakdown voltage, high electron mobility and fast saturation electron drift, etc., so GaN-based devices It has the characteristics of small on-state resistance, high voltage resistance and high temperature resistance, and has obvious advantages in the field of power devices, especially in rectifiers. However, the current development of GaN-based rectifiers is severely limited, mainly due to the continuous shrinking of the device size and the continuous improvement of heat dissipation requirements. The conventional silicon substrate has a small thermal conductivity (150W / m·K), which ca...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/329H01L21/02H01L29/872H01L23/373
CPCH01L21/02425H01L21/02458H01L21/0254H01L21/02631H01L23/3736H01L29/66212H01L29/872
Inventor 李国强胡智凯王文樑唐鑫
Owner SOUTH CHINA UNIV OF TECH
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