MEMS capacitive air pressure sensor based on PN junction electrical isolation and anodic bonding technologies
An air pressure sensor and anodic bonding technology, applied in the direction of microstructure technology, fluid pressure measurement using capacitance changes, instruments, etc., can solve complex micro-nano processing procedures, multi-high-end micro-nano processing equipment, undisclosed electrodes Lead technology and other issues, to achieve excellent long-term vacuum maintenance ability, ensure long-term stability, and good commercialization effect
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[0035] The specific implementation process of the present invention will be described in detail below in conjunction with the accompanying drawings and examples.
[0036]figure 1 It is a schematic diagram of the three-dimensional separation anatomy of the present invention. The capacitive air pressure sensor is composed of one side of the air pressure sensitive film 200 anodically bonded to the glass substrate 300 , and the other side of the air pressure sensitive film 200 is anodically bonded to the glass cover plate 100 .
[0037] The base material of the air pressure sensitive film 200 of the capacitive air pressure sensor is the device layer of an N-type ultra-low resistivity (<0.005Ω·cm) SOI wafer, on which a P-type silicon electrical isolation region 203 is formed by heavy doping, and the P The P-type silicon electrical isolation region 203 is an annular structure with an open end, and a rectangular isolation grid is processed in the inner diameter direction of the annula...
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