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Three-dimensional gallium nitride-based exhalation type gas sensor and preparation method thereof

A gas sensor, gallium nitride-based technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of complex detection process, low repeatability of results, high price, etc., to achieve High reproducibility of results, good biocompatibility and environmental friendliness, cheap effect

Active Publication Date: 2020-04-24
TAIYUAN UNIV OF TECH
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Problems solved by technology

[0005] The present invention overcomes the deficiencies of the prior art, and proposes a three-dimensional gallium nitride-based exhaled gas sensor and its preparation method, aiming at solving the problems of expensive gas qualitative detection and quantitative analysis instruments, complicated detection process, and low repeatability of results, etc. question

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  • Three-dimensional gallium nitride-based exhalation type gas sensor and preparation method thereof
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  • Three-dimensional gallium nitride-based exhalation type gas sensor and preparation method thereof

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Embodiment Construction

[0038] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail in combination with the embodiments and accompanying drawings. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. The technical solutions of the present invention will be described in detail below in conjunction with the embodiments and drawings, but the scope of protection is not limited thereto.

[0039] like Figure 1 to Figure 5 , is a flow chart of a preparation method of a three-dimensional gallium nitride-based exhalation gas sensor, the preparation method is:

[0040] 1) After the sapphire substrate GaN-based epitaxial wafer is processed by RCA standard cleaning method, the metal Ni layer 4 with a thickness of about 50 nm is evaporated by vacuum electron beam as a mask layer ...

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Abstract

The invention relates to a three-dimensional gallium nitride-based exhalation type gas sensor and a preparation method thereof, and belongs to the technical field of gas sensors. A two-dimensional unintentionally doped and n-type GaN thin film is formed on a sapphire substrate in an epitaxial mode, then a Ni / SiO2 hexagonal mask plate is prepared, a high-quality Nano p-i-n structure grows on the mask plate in an epitaxial mode, and a novel Nano p-i-n diode is formed; and the Nano p-i-n structure and a PDMS / graphene transfer electrode technology are combined to prepare the gas sensor with high sensitivity and high selectivity. The GaN-based device adopted by the invention is relatively insensitive to temperature, relatively stable in device performance, good in biocompatibility and environmental friendliness, simple and easy to operate in detection process, high in result repeatability and low in equipment maintenance cost.

Description

technical field [0001] The invention belongs to the technical field of gas sensors, and in particular relates to a three-dimensional gallium nitride-based exhalation gas sensor and a preparation method thereof. Background technique [0002] In my country, asthma and chronic kidney disease affect the health of nearly 140 million people. Nitrogen-containing compounds (NO) in human exhaled air X , NH 3 , TMA) markers are used as gas sensors for screening, diagnosis and monitoring of asthma and chronic kidney disease. The development of sensors suitable for detecting human exhaled gas will help to improve the research level of modern medicine and the quality of people's life. [0003] At this stage, chromatography-mass spectrometry and chemiluminescence are capable of qualitative detection and quantitative analysis of trace gases, but there are problems with expensive equipment, complicated detection process, reproducibility of results closely related to the proficiency of op...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/20H01L29/868H01L21/329B81B7/02B81C1/00G01N27/12
CPCB81B7/02B81B2201/02B81C1/00373B81C2201/0187G01N27/127H01L29/0676H01L29/068H01L29/2003H01L29/6609H01L29/868
Inventor 韩丹刘青明桑胜波冀健龙张强李强张文栋
Owner TAIYUAN UNIV OF TECH
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