Preparation method and application of nanocrystalline high-entropy oxide thin film

An oxide film and nanocrystalline technology, applied in ion implantation plating, metal material coating process, coating and other directions, to achieve the effect of large saturation magnetization, simple operation process and strong ferromagnetism

Active Publication Date: 2020-05-08
SICHUAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, only preliminary studies have been done on the magnetic properties of perovskite-structured high-entropy oxides and rock-salt-structured high-entropy oxides containing only transition metal cations with 3d orbital electrons greater than 5, although these structured high-entropy oxides There are a large number of ferromagnetic elements, but the experimental results found that they are antiferromagnetic and spin glass states, that is, there is no ferromagnetism at room temperature
Although, recent studies have reported that spinel-type high-entropy oxides (CoCrFeMnNi) 3 o 4 Magnetic at room temperature, however, oxides with a spinel structure are ferrimagnetic

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  • Preparation method and application of nanocrystalline high-entropy oxide thin film

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Embodiment 1

[0028] A method for preparing a nanocrystalline high-entropy oxide film, comprising the following steps:

[0029] Step S1: First weigh the metal oxide powder mixture with a purity higher than 99.90% and put it into the mold. The metal oxide powder mixture is composed of the following mass percentage: 14% Al 2 o 3 , 22%Cr 2 o 3 , 23% Fe 2 o 3 , 21% NiO and 20% MnO, and then cold-pressed it with a tablet press to make a cylindrical compact with a diameter of 50mm and a thickness of 5mm;

[0030] Step S2: Place the cylindrical compact in a muffle furnace for high-temperature calcination and then slowly cool to room temperature to obtain a mixed oxide target; the heating rate of the high-temperature calcination process is 1-10°C / min, and the calcination temperature is 1200-1500°C ℃, the constant temperature calcination time is 20-30 hours;

[0031] Step S3: ultrasonically clean the base material of monocrystalline silicon (100) with suitable size for 5 minutes with alcohol, ...

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Abstract

The invention discloses a preparation method and application of a nanocrystalline high-entropy oxide thin film. The preparation method includes the following steps that first, a metal oxide powder mixture with the purity higher than 99.90% is weighed and put into a mold, then cold press molding is conducted, and cylindrical compact with the diameter being 60 mm and the thickness being 5 mm is made; the cylindrical compact is calcined at the high temperature and then slowly cooled to the room temperature to obtain a mixed oxide target; a monocrystalline silicon (100) substrate material is subjected to ultrasonic cleaning for 5 min by successively using alcohol, acetone and deionized water; the mixed oxide target and the monocrystalline silicon (100) substrate material are subjected to multi-target magnetron sputtering under vacuum conditions, and the vacuum degree is 2.0*10<-4> Pa; and after multi-target magnetron sputtering, the temperature of a vacuum chamber is cooled to the room temperature, and a sputtered thin film is taken out to obtain the nanocrystalline high-entropy oxide thin film. The nanocrystalline high-entropy oxide thin film has high ferromagnetism and high saturation magnetization intensity.

Description

technical field [0001] The invention belongs to the technical field of magnetic thin film preparation, and in particular relates to a preparation method of a nanocrystalline high-entropy oxide thin film and an application of the nanocrystalline high-entropy oxide thin film. Background technique [0002] Ferrite magnetic film is a composite oxide magnetic film composed of iron group elements and one or more other metal elements. Compared with metal and alloy magnetic films, ferrite materials have higher resistivity and can suppress the skin effect at high frequencies. They are suitable for high-frequency and ultra-high-frequency alternating magnetic fields and are indispensable in the field of microwave communications. s material. In particular, the ferrite film has a large dielectric constant, and is widely used in various inductance components, magnets in telecommunication devices, various microwave devices, electronic equipment, memory cores of electronic computers, and a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/08C23C14/3414C23C14/352
Inventor 李晓华孙森杨朝明汪渊
Owner SICHUAN UNIV
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