Unlock instant, AI-driven research and patent intelligence for your innovation.

GaN/rGO-based infrared position sensor and preparation method and detection method

A detection method and sensor technology, applied in the field of photoelectric sensors, can solve the problems of high cost, inability to detect, complex process, etc., and achieve the effects of low production cost, broadened application range, and simple structure and production process

Active Publication Date: 2020-05-15
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the spectrum of current commercial devices is limited by the bandgap width of silicon (1.1eV), and cannot detect near-infrared-far-infrared targets. Miscellaneous etching, etc., the process is complicated and the cost is high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • GaN/rGO-based infrared position sensor and preparation method and detection method
  • GaN/rGO-based infrared position sensor and preparation method and detection method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Embodiment 1: This embodiment provides a preparation and detection method of an infrared photoelectric position sensor based on GaN / rGO, wherein GO is graphene oxide, rGO is redox graphene, and a 1550nm infrared laser is used as the light source, and the spot size is 2 Micron, the implementation process is as follows:

[0035] First, the GaN substrate 1 on the Ga surface or the N surface is cut and grown into a strip structure of 30mm and 2mm in width, and ultrasonically cleaned with acetone reagent, isopropanol, and deionized water for 15 minutes in sequence, and then the substrate is dried with high-pressure nitrogen gas. bottom surface.

[0036] Using a mask plate and electron beam evaporation or thermal evaporation, the multilayer metal Ti / Al / Ni / Au is sequentially plated on both ends of the GaN strip substrate as the ohmic contact electrode 2, with a total thickness of about 100nm. The distance is 25mm.

[0037] Add a 0.22 μm fiber filter membrane to the vacuum fi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
widthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the field of photoelectric sensors, and provides a GaN / rGO-based infrared position sensor and a preparation method and a detection method thereof. The GaN / rGO-based infrared position sensor comprises a GaN substrate, electrodes at two sides above the substrate, and a reduced graphene oxide layer. The pyroelectric effect of GaN under infrared laser spot irradiation is utilized, and the relation between device pyroelectric response and spot displacement is utilized to realize detection of the position of an infrared spot. The photoelectric position sensor is different from a traditional photoelectric position sensor based on a PN junction or a Schottky internal light effect. The pyroelectric effect generated by GaN spontaneous polarization is used for driving the position sensor to work, the device has a spectral response range wider than that of a silicon-based device (>1.1 eV), the spectral response range is from purple light to far infrared, and the application range of a current commercial device is greatly widened.

Description

technical field [0001] The invention relates to the field of photoelectric sensors, in particular to a GaN / rGO-based infrared position sensor, a preparation method and a detection method. Background technique [0002] The light spot position sensor based on photoelectric conversion has been widely used in the fields of people's livelihood, industry, national defense, etc. It can continuously detect the position of the light spot and its changes without blind spots, and then reflect the displacement changes of the observation targets that change synchronously with it, such as the position of the robot. High-precision measurement such as bionic vision and cantilever displacement detection of atomic force microscope. [0003] Although the array image sensing device can also be used to detect the position of the light spot, due to the existence of array pixels, it is impossible to perceive whether the light spot exists when it falls between two pixels, thus misjudging the displa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L37/02G01B11/00G01S11/12H10N15/10
CPCG01B11/00G01S11/12H10N15/15H10N15/10Y02P70/50
Inventor 胡来归叶怀宇张国旗
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA