Preparation methods of conductive filler and semiconductive shielding material thereof

A technology for conductive fillers and shielding materials is applied in the field of preparation of conductive fillers and semi-conductive shielding materials, and can solve the problems of low shielding efficiency of semi-conductive shielding materials and the like

Active Publication Date: 2020-05-29
JIANGSU KEMAITE TECH DEV CO LTD
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, semi-conductive shielding materials filled with carbon black have low shielding effectiveness at low frequencies

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation methods of conductive filler and semiconductive shielding material thereof
  • Preparation methods of conductive filler and semiconductive shielding material thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] A preparation method of conductive filler, comprising the steps of:

[0053] 1) Wet ball milling of metal oxides: Fe 2 o 3 and NiO according to the mass ratio of 1.08:2.35, the total mass of metal oxides and anhydrous ethanol according to the mass ratio of 2:1, the total mass of grinding balls and metal oxides according to the mass ratio of 13:1.1, and then the weighed grinding balls Put it into the grinding jar, then add Fe 2 o 3 , NiO and absolute ethanol, and finally ball milled at a speed of 200r / min for 10h.

[0054] 2) Sieving the metal oxide: the metal oxide obtained in step 1) was dried in an oven at 110° C. for 4 hours, and then sieved through a 250-mesh gauze.

[0055] 3) Surface treatment of hollow glass microspheres: weigh the surface treatment liquid and hollow glass microspheres according to the mass ratio of 4:1, the surface treatment liquid is methyltriethoxysilane hydrolyzate with a mass fraction of 2%, and the hollow glass The microbeads were soak...

Embodiment 2

[0065] A preparation method of conductive filler, comprising the steps of:

[0066] 1) Wet ball milling of metal oxides: Fe 2 o 3 and NiO according to the mass ratio of 1.08:2.35, the total mass of metal oxides and anhydrous ethanol according to the mass ratio of 2:1, the total mass of grinding balls and metal oxides according to the mass ratio of 13:1.1, and then the weighed grinding balls Put it into the grinding jar, then add Fe 2 o 3 , NiO and absolute ethanol, and finally ball milled at a speed of 200r / min for 10h.

[0067] 2) Sieving the metal oxide: the metal oxide obtained in step 1) was dried in an oven at 110° C. for 4 hours, and then sieved through a 250-mesh gauze.

[0068] 3) Surface treatment of hollow glass microspheres: weigh the surface treatment liquid and hollow glass microspheres according to the mass ratio of 4:1, the surface treatment liquid is methyltriethoxysilane hydrolyzate with a mass fraction of 2%, and the hollow glass The microbeads were soak...

Embodiment 3

[0078] A preparation method of conductive filler, comprising the steps of:

[0079] 1) Wet ball milling of metal oxides: Fe 2 o 3 and NiO according to the mass ratio of 1.08:2.35, the total mass of metal oxides and anhydrous ethanol according to the mass ratio of 2:1, the total mass of grinding balls and metal oxides according to the mass ratio of 13:1.1, and then the weighed grinding balls Put it into the grinding jar, then add Fe 2 o 3 , NiO and absolute ethanol, and finally ball milled at a speed of 200r / min for 10h.

[0080] 2) Sieving the metal oxide: the metal oxide obtained in step 1) was dried in an oven at 110° C. for 4 hours, and then sieved through a 250-mesh gauze.

[0081] 3) Surface treatment of hollow glass microspheres: weigh the surface treatment liquid and hollow glass microspheres according to the mass ratio of 4:1, the surface treatment liquid is methyltriethoxysilane hydrolyzate with a mass fraction of 2%, and the hollow glass The microbeads were soak...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
particle sizeaaaaaaaaaa
elongation at breakaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the field of conductive shielding materials, and relates to preparation methods of a conductive filler and a semiconductive shielding material thereof. The Ag / Fe-Ni / hollow glass bead conductive filler is prepared. Firstly, a high-temperature metal oxide reduction process is adopted to coat hollow glass beads with an iron-nickel alloy for multiple times, a chemical reduction method is adopted to coat the iron-nickel alloy-coated glass beads with silver for multiple times, and the coating times in the preparation process of an intermediate coating layer, the mass ratio of Fe2O3 to NiO in the coating layer and the dosage of the prepared conductive filler are set, so the semiconductive shielding material has excellent shielding performance at low frequency or high frequency, the shielding effectiveness at low frequency is 10-19 dB, and the shielding effectiveness at high frequency is 30-44 dB. After replacing part of carbon black, the conductive filler disclosed bythe invention not only cooperates with the carbon black for conductive shielding, but also reduces the total parts of a filler and ensures the light weight of the semiconductive shielding material.

Description

technical field [0001] The invention belongs to the field of conductive shielding materials, and relates to a preparation method of a conductive filler and a semiconductive shielding material. Background technique [0002] With the continuous improvement of my country's power system, various large-scale hydropower stations, large-scale intensive development of coal, hydropower, nuclear energy, and renewable new energy power stations are all under construction, which leads to the demand for medium and high voltage power cables year by year raised. IEC 502 stipulates that cables with a rated voltage above 1.8 / 3.0kv and insulated with polyvinyl chloride and ethylene propylene rubber, and a rated voltage above 3.6 / 6.0kv must use inner and outer semi-conductive shielding layers. [0003] Foreign countries have started research on semi-conductive shielding materials since the 1950s. After the 1970s, foreign countries have developed semi-conductive shielding materials with practica...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C08K9/10C08K7/28C08L23/08C08L23/12C08L53/02C08K13/06C08K7/14C08K3/04
CPCC08K7/28C08K9/10C08K2201/001C08K2201/003C08K2201/004C08L23/0853C08L2205/035C08L23/12C08L53/02C08K13/06C08K7/14C08K3/04
Inventor 虞家桢
Owner JIANGSU KEMAITE TECH DEV CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap