Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silver sulfide-based inorganic thermoelectric material and preparation method and application thereof

A technology of thermoelectric materials and silver sulfide, which is applied in the direction of thermoelectric device junction lead-out materials, thermoelectric device manufacturing/processing, thermoelectric devices that only use Peltier or Seebeck effect, etc., can solve the problem of low carrier concentration of silver sulfide, Not suitable for problems such as thermoelectric materials, to achieve the effects of easy mass production, good flexibility, and huge application prospects

Active Publication Date: 2020-06-05
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
View PDF1 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the carrier concentration of silver sulfide is very low, so it is not suitable as a thermoelectric material, and the research on flexible thermoelectric devices based on inorganic thermoelectric materials and their preparation methods is still blank, and no public reports have been seen.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silver sulfide-based inorganic thermoelectric material and preparation method and application thereof
  • Silver sulfide-based inorganic thermoelectric material and preparation method and application thereof
  • Silver sulfide-based inorganic thermoelectric material and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0038] In one embodiment of the present invention, the preparation method of a flexible thermoelectric device based on silver sulfide-based inorganic thermoelectric material includes: cutting out a thermoelectric arm of a specific size from a dense bulk silver sulfide-based inorganic thermoelectric material. The electrodes are connected with silver sulfide-based thermoelectric arms to form a thermoelectric pair in series. A flexible thermoelectric device is obtained by adhering multiple groups of thermoelectric pairs composed of silver sulfide-based inorganic thermoelectric materials on a flexible substrate.

[0039] The silver sulfide-based inorganic thermoelectric material is prepared as a thermoelectric arm in a silver sulfide-based inorganic flexible thermoelectric device, including: casting an ingot of the silver sulfide-based inorganic thermoelectric material or a dense block of the sintered silver sulfide-based thermoelectric material, using a diamond cutter , Internal ...

Embodiment 1

[0049] This Example 1 is an in-plane type device. Preparation of N-type Ag 2 S 0.5 Se 0.5 Materials: Weigh high-purity Ag, S, and Se elements according to the stoichiometric ratio of 4:1:1. It is added into a Φ10 thick quartz tube for vacuum packaging; the packaged quartz tube is heated to 1000°C at a heating rate of 40 hours and kept for 12 hours, then cooled to 100°C within 25 hours, and then the quartz tube is annealed at 450°C for 5 sky. The annealed Ag 2 S 0.5 Se 0.5 The ingot was smashed into powder with a stainless steel pestle under a liquid nitrogen environment. The powder was then sintered at 190 °C for 0.5 h using spark plasma sintering to finally obtain dense N-type Ag 2 S 0.5 Se 0.5 blocks. In the three-point bending test, the dense N-type Ag 2 S 0.5 Se 0.5 The bulk can withstand 12% mechanical strain without rupture; in compression tests, dense N-type Ag 2 S 0.5 Se 0.5 The blocks can withstand up to 55% mechanical strain without breaking. Its th...

Embodiment 2

[0051] This Example 2 is an out-of-plane device. Preparation of N-type Ag 2 S 0.6 Te 0.4 Materials: Weigh high-purity Ag, S, and Te elements according to the stoichiometric ratio of 10:3:2. It is added into a Φ10 thick quartz tube for vacuum packaging; the packaged quartz tube is heated to 1000°C at a heating rate of 40 hours and kept for 12 hours, then cooled to 100°C within 25 hours, and then the quartz tube is annealed at 450°C for 5 sky. The annealed Ag 2 S 0.6 Te 0.4 The ingot was smashed into powder with a stainless steel pestle under a liquid nitrogen environment. The powder was then sintered at 320 °C for 0.5 h using spark plasma sintering to finally obtain dense N-type Ag 2 S 0.6 Te 0.4 blocks. Its thermoelectric properties are as figure 2 As shown, at 300K, its power factor is 3.1μW·cm -1 ·K -2 , much higher than conventional organic thermoelectric materials. In the three-point bending test, a dense N-type Ag 2 S 0.6 Te 0.4 The bulk can withstand 8...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Power factoraaaaaaaaaa
Heightaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a silver sulfide-based inorganic thermoelectric material and a preparation method and application thereof. The chemical formula of the silver sulfide-based inorganic thermoelectric material is Ag2(S1-xMx), M is at least one of a Se element and a Te element, and x is greater than or equal to 0.001 and less than or equal to 0.9.

Description

technical field [0001] The invention relates to a silver sulfide-based inorganic thermoelectric material and its preparation method and application, belonging to the field of flexible and wearable electronics. Background technique [0002] Flexible electronics is an emerging electronic technology that fabricates organic / inorganic material electronic devices on flexible / ductile substrates. Flexible electronics covers organic electronics, plastic electronics, bioelectronics, nanoelectronics, printed electronics, etc., including RFID, flexible display, organic electroluminescent (OLED) display and lighting, chemical and biological sensors, flexible photovoltaics, flexible logic and storage, flexible Batteries, wearable devices and many other applications. Compared with traditional electronics, flexible electronics has greater flexibility and can adapt to different working environments and meet the requirements of devices of different shapes. With the rapid development of flex...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L35/16H01L35/32H01L35/34
CPCH10N10/852H10N10/01H10N10/17
Inventor 史迅仇鹏飞杨世琪梁佳晟王拓陈立东
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com