Surface-emitting semiconductor laser chip and preparation method thereof
A surface-emitting, semiconductor technology, applied in the field of surface-emitting semiconductor laser chips and their preparation, to achieve the effects of easy production, improved beam quality, and simple process
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Embodiment 1
[0065] The invention discloses a surface-emitting semiconductor laser chip and a preparation method thereof. The semiconductor laser chip is a surface-emitting two-dimensional array light source chip which emits laser light from the bottom of a substrate layer. The surface emitting two-dimensional array light source of this embodiment consists of such as figure 2 and 3 The surface emitting light sources 11 shown are arranged in a quadrangular matrix. Such as Picture 1-1 As shown, the surface-emitting semiconductor laser chip with high beam quality in this embodiment includes: P-type electrode 1-1 (first electrode), passivation layer 2, P-type ohmic contact layer 3-1, P-type rear mirror 4-1, Oxidation optical confinement layer 5, active layer 6, N-type front mirror 7-1, N-type substrate layer 8-1, N-type electrode 9-1 (second electrode), semi-reflective and semi-transparent film 10; chip from bottom to bottom N-type substrate layer 8-1, N-type front mirror 7-1, active laye...
Embodiment 2
[0074] The invention discloses a surface-emitting semiconductor laser chip and a preparation method thereof. The semiconductor laser chip is a surface-emitting two-dimensional array light source chip which emits laser light from the bottom of a substrate layer. The surface emitting two-dimensional array light source of this embodiment consists of such as figure 2 and 3 The surface emitting light sources 11 shown are arranged in a quadrangular matrix. Such as Figure 1-2 As shown, the surface-emitting semiconductor laser chip with high beam quality in this embodiment includes: N-type electrode 1-2 (first electrode), passivation layer 2, N-type ohmic contact layer 3-2, N-type rear mirror 4-2, Oxidation optical confinement layer 5, active layer 6, P-type front mirror 7-2, P-type substrate layer 8-2, P-type circular electrode 9-2 (second electrode), semi-reflective and semi-transparent film 10; the chip consists of From bottom to top, there are P-type substrate layer 8-2, P-ty...
Embodiment 3
[0082] The invention discloses a surface-emitting semiconductor laser chip and a preparation method thereof. The semiconductor laser chip is a surface-emitting two-dimensional array light source chip which emits laser light from the bottom of a substrate layer. The surface emitting two-dimensional array light source of this embodiment consists of such as Figure 4 and 5 The surface emitting light sources 11 shown are arranged in a hexagonal matrix. Such as Picture 1-1 As shown, the surface-emitting semiconductor laser chip with high beam quality in this embodiment includes: P-type electrode 1-1 (first electrode), passivation layer 2, P-type ohmic contact layer 3-1, P-type rear mirror 4-1, Oxidation optical confinement layer 5, active layer 6, N-type front mirror 7-1, N-type substrate layer 8-1, N-type electrode 9-1 (second electrode), semi-reflective and semi-transparent film 10; chip from bottom to bottom N-type substrate layer 8-1, N-type front mirror 7-1, active layer 6...
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Abstract
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