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Surface-emitting semiconductor laser chip and preparation method thereof

A surface-emitting, semiconductor technology, applied in the field of surface-emitting semiconductor laser chips and their preparation, to achieve the effects of easy production, improved beam quality, and simple process

Active Publication Date: 2020-06-09
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the deficiencies in the above problems, the present invention provides a surface-emitting semiconductor laser chip and its preparation method. This invention can not only use the external cavity structure to achieve light source coherence and improve the beam quality of the device, but also has no packaging difficulties and The problem of deformation caused by external influences, the process is simple, and the production is easy

Method used

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  • Surface-emitting semiconductor laser chip and preparation method thereof
  • Surface-emitting semiconductor laser chip and preparation method thereof
  • Surface-emitting semiconductor laser chip and preparation method thereof

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Effect test

Embodiment 1

[0065] The invention discloses a surface-emitting semiconductor laser chip and a preparation method thereof. The semiconductor laser chip is a surface-emitting two-dimensional array light source chip which emits laser light from the bottom of a substrate layer. The surface emitting two-dimensional array light source of this embodiment consists of such as figure 2 and 3 The surface emitting light sources 11 shown are arranged in a quadrangular matrix. Such as Picture 1-1 As shown, the surface-emitting semiconductor laser chip with high beam quality in this embodiment includes: P-type electrode 1-1 (first electrode), passivation layer 2, P-type ohmic contact layer 3-1, P-type rear mirror 4-1, Oxidation optical confinement layer 5, active layer 6, N-type front mirror 7-1, N-type substrate layer 8-1, N-type electrode 9-1 (second electrode), semi-reflective and semi-transparent film 10; chip from bottom to bottom N-type substrate layer 8-1, N-type front mirror 7-1, active laye...

Embodiment 2

[0074] The invention discloses a surface-emitting semiconductor laser chip and a preparation method thereof. The semiconductor laser chip is a surface-emitting two-dimensional array light source chip which emits laser light from the bottom of a substrate layer. The surface emitting two-dimensional array light source of this embodiment consists of such as figure 2 and 3 The surface emitting light sources 11 shown are arranged in a quadrangular matrix. Such as Figure 1-2 As shown, the surface-emitting semiconductor laser chip with high beam quality in this embodiment includes: N-type electrode 1-2 (first electrode), passivation layer 2, N-type ohmic contact layer 3-2, N-type rear mirror 4-2, Oxidation optical confinement layer 5, active layer 6, P-type front mirror 7-2, P-type substrate layer 8-2, P-type circular electrode 9-2 (second electrode), semi-reflective and semi-transparent film 10; the chip consists of From bottom to top, there are P-type substrate layer 8-2, P-ty...

Embodiment 3

[0082] The invention discloses a surface-emitting semiconductor laser chip and a preparation method thereof. The semiconductor laser chip is a surface-emitting two-dimensional array light source chip which emits laser light from the bottom of a substrate layer. The surface emitting two-dimensional array light source of this embodiment consists of such as Figure 4 and 5 The surface emitting light sources 11 shown are arranged in a hexagonal matrix. Such as Picture 1-1 As shown, the surface-emitting semiconductor laser chip with high beam quality in this embodiment includes: P-type electrode 1-1 (first electrode), passivation layer 2, P-type ohmic contact layer 3-1, P-type rear mirror 4-1, Oxidation optical confinement layer 5, active layer 6, N-type front mirror 7-1, N-type substrate layer 8-1, N-type electrode 9-1 (second electrode), semi-reflective and semi-transparent film 10; chip from bottom to bottom N-type substrate layer 8-1, N-type front mirror 7-1, active layer 6...

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Abstract

The invention discloses a surface-emitting semiconductor laser chip and a preparation method thereof. The semiconductor laser chip is a surface-emitting two-dimensional array light source chip emitting laser from a substrate layer; and the distance between the centers of two adjacent light sources is equal. The chip is sequentially provided with a substrate layer, a front mirror, an active layer,an oxidation optical limiting layer, a rear mirror and an ohmic contact layer from bottom to top; the thickness of the substrate layer, the distance between the surface emitting array light sources and laser wavelength meet a Talpot relational expression; a first electrode is manufactured at the top of the ohmic contact layer; a passivation layer is manufactured at a certain position of the firstelectrode, wherein the position of the first electrode does not contact with the ohmic contact layer; a groove structure is manufactured at the position, corresponding to the oxidation aperture of theoxidation optical limiting layer, of the light-emitting side of the substrate layer, a second electrode is manufactured at the groove position of the substrate layer, and the second electrode and thefirst electrode at the top of the ohmic contact layer are opposite in electrical property; and the non-electrode position of the light-emitting surface of the substrate layer is plated with a semi-reflecting and semi-transmitting film, and laser is emitted at the position.

Description

technical field [0001] The invention relates to the technical field of semiconductor laser chips, in particular to a surface-emitting semiconductor laser chip and a preparation method thereof. Background technique [0002] Compared with edge-emitting semiconductor lasers, vertical cavity surface-emitting semiconductor lasers (VCSEL) are characterized by their small size, high coupling efficiency, low threshold current, high modulation rate, easy two-dimensional integration, single longitudinal mode operation, and on-chip testing and manufacturing. The advantages of low cost have become one of the most important semiconductor optoelectronic devices. In particular, high-power VCSEL arrays are widely used in laser printing, laser medical treatment, laser drilling, welding processing and other fields. With the development of fields such as industry, military affairs, medical treatment and space communication, there is a demand for high beam quality for high-power VCSEL arrays. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/187H01S5/042H01S5/42H01S5/024
CPCH01S5/02461H01S5/0425H01S5/18305H01S5/187H01S5/423
Inventor 王智勇王聪聪李冲兰天
Owner BEIJING UNIV OF TECH
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