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A kind of poly 4-methylpentene and sio 2 Microsphere composite film and preparation method thereof

A technology of methyl pentene and composite film, which is applied in the field of poly-4-methyl pentene and SiO2 microsphere composite film and its preparation field, can solve the problem that a film with uniform thickness cannot be obtained and the like

Active Publication Date: 2021-06-15
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The solution casting method has the characteristics of simple operation and low cost, but the simple solution casting method cannot obtain a film with uniform thickness

Method used

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  • A kind of poly 4-methylpentene and sio <sub>2</sub> Microsphere composite film and preparation method thereof
  • A kind of poly 4-methylpentene and sio <sub>2</sub> Microsphere composite film and preparation method thereof
  • A kind of poly 4-methylpentene and sio <sub>2</sub> Microsphere composite film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] (1) Dissolution of the polymer poly-4-methylpentene (TPX). The specific process is: select cyclohexane (0.2g) as the solvent of poly-4-methylpentene (6g), fully stir under heating and stirring conditions, set the heating temperature to 60°C, and stir for 1.5 hours;

[0047] (2) Pretreatment of the substrate. Wherein, the pretreatment of the substrate includes: firstly, the substrate is ultrasonically cleaned in deionized water and ethanol in sequence, each time lasting 10 minutes, and dried in an oven. Next, the substrate was immersed in a modification solution (1% wt / alcohol) containing a silane coupling agent for 4 hours. Finally, in order to achieve the purpose of controlling the thickness of the film, a tape with a thickness of 1000 μm was pasted around the substrate. The aforementioned substrate is a material with a flat and smooth surface. Wherein the selected substrate is a glass plate;

[0048] (3) Preparation of composite solution. Addition of SiO to poly-...

Embodiment 2

[0052] (1) Dissolution of the polymer poly-4-methylpentene (TPX). The specific process is: select trichlorethylene (5g) as the solvent of poly-4-methylpentene (0.3g), fully stir under heating and stirring conditions, the heating temperature is set to 70 ° C, and the stirring time is 2 hours;

[0053] (2) Pretreatment of the substrate. Wherein, the pretreatment of the substrate includes: firstly, the substrate is ultrasonically cleaned in deionized water and ethanol in sequence, each time lasting 10 minutes, and dried in an oven. Next, the substrate was immersed in a modification solution (1% wt / alcohol) containing a silane coupling agent for 4 hours. Finally, in order to achieve the purpose of controlling the thickness of the film, a tape with a thickness of 1000 μm was pasted around the substrate. The aforementioned substrate is a material with a flat and smooth surface. The selected substrate is a single crystal silicon wafer;

[0054] (3) Preparation of composite soluti...

Embodiment 3

[0058] (1) Dissolution of the polymer poly-4-methylpentene (TPX). The specific process is as follows: select chloroform (5.6g) as the solvent of poly-4-methylpentene (0.2g), fully stir under heating and stirring conditions, set the heating temperature to 50°C, and stir for 1.5 hours;

[0059] (2) Pretreatment of the substrate. Wherein, the pretreatment of the substrate includes: first, the substrate is ultrasonically cleaned in deionized water and ethanol in sequence, each time lasting 10 minutes, and dried in an oven. Next, the substrate was immersed in a modification solution (1% wt / alcohol) containing a silane coupling agent for 4 hours. Finally, in order to achieve the purpose of controlling the thickness of the film, a tape with a thickness of 1000 μm was pasted around the substrate. The aforementioned substrate is a material with a flat and smooth surface. Wherein the selected substrate is sapphire;

[0060] (3) Preparation of composite solution. Addition of SiO to ...

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Abstract

The present invention relates to a kind of poly 4-methylpentene and SiO 2 A microsphere composite film and a preparation method thereof, the preparation method comprising: (1) heating and stirring poly-4-methylpentene (TPX) and a solvent at 0-90° C. to dissolve to obtain a poly-4-methylpentene solution; (2) Add SiO to the resulting poly-4-methylpentene solution 2 Microspheres, get TPX‑SiO 2 Microsphere composite solution; (3) dripping the obtained TPX‑SiO on the substrate 2 After the microsphere composite solution is placed in a sealed container, after the solvent evaporates, the poly-4-methylpentene and SiO 2 Microsphere composite film.

Description

technical field [0001] The present invention relates to a kind of poly-4-methylpentene (TPX) and SiO 2 The invention relates to a microsphere composite film and a preparation method thereof, which belong to the technical field of chemical preparation of organic polymer and inorganic particle composite film. Background technique [0002] Organic thin films have disadvantages such as low chemical stability, narrow temperature range, easy to be polluted, low mechanical strength, and short service life. In recent years, by incorporating inorganic particles into organic polymer films, not only the problem of difficult processing of inorganic materials has been overcome, but also some special properties (mechanics, optics, electricity, etc.) of the polymer have been enhanced. This polymer-inorganic particle composite film idea has great prospects at present and even in the future. [0003] The current chemical preparation methods of polymer-inorganic particle composite films inc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08J5/18C08L23/20C08K7/18
CPCC08J5/18C08J2323/20C08K7/18C08K2201/003
Inventor 高相东杨京南张彤彤吴永庆
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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