Vertical structure LED chip with double-sided transparent electrodes and preparation method of vertical structure LED chip
A technology of LED chips and transparent electrodes, which is applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as poor current expansion and unstable voltage, and achieve the effects of poor current expansion, stable product voltage, and reduced heat generation
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[0050] A method for preparing an LED chip with a vertical structure with double-sided transparent electrodes. The method includes the following steps:
[0051] Step S1, using MOCVD to grow an epitaxial layer 6 on a substrate such as silicon, sapphire, SiC, etc., to form an LED epitaxial wafer;
[0052] Step S2, on the LED epitaxial wafer, using CVD or PVD or evaporation or spin coating method to grow p-surface transparent electrode 5;
[0053] Step S3, using electron beam evaporation or PVD to cover the entire surface of the reflective metal layer 4 on the p-side transparent electrode 5 and the epitaxial layer 6;
[0054] Step S4, using electron beam evaporation or PVD method to cover the entire surface of the reflective metal layer 4 with the protective metal layer 3 and the bonding metal layer 2;
[0055] Step S5, using electron beam evaporation or PVD method to make a bonding metal layer on the supporting conductive substrate 1;
[0056] Step S6, bonding the samples obtained in step S...
Example Embodiment
[0063] Embodiment 1 of the manufacturing method of the vertical structure LED chip with double-sided transparent electrodes:
[0064] (1) LED epitaxial wafers with 2um-8um epitaxial layer grown on Si substrate using MOCVD epitaxial technology;
[0065] (2) Use acetone and isopropanol for organic cleaning for 5 minutes to remove organic dirt;
[0066] (3) Use SPM solution for pickling to remove inorganic metal and organic dirt;
[0067] (4) Flush and spin dry, use CVD equipment to grow 200nm graphene at 300 degrees;
[0068] (5) 200nm Al metal is deposited by electron beam evaporation on the entire surface.
[0069] (6) Electron beam evaporation TiPtTiPt (Ti20nm-200nm, Pt20nm-300nm) protective layer and NiSn (Ni100nm-800nm, Sn100nm-2000nm) bonding metal layer
[0070] (7) Using an electron beam evaporation process, a NiSn (Ni100nm-800nm, Sn100nm-2000nm) bonding metal layer is vapor-deposited on the high-conductivity Si substrate.
[0071] (8) The samples prepared in (10) and (11) are bonded...
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