Ceramic integrated packaging shell and manufacturing process thereof
A technology for encapsulating shells and ceramics, which is used in electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of welding cracking, sealing failure, poor sealing reliability, etc., to avoid damage and improve sealing reliability. , The effect of improving the production qualification rate
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Embodiment 1
[0057] S1. In this embodiment, the alumina green porcelain is prepared by pressing and casting, and then the alumina green porcelain is sintered or printed with patterns to prepare a thick-film ceramic substrate with built-in passive components, and the thickness of the thick-film ceramic substrate The surface is ground and polished;
[0058] S2. After cleaning the thick-film ceramic substrate in S1, use the magnetron sputtering method to make a metal thin-film wiring layer on the surface of the thick-film ceramic substrate, and sputter Ti / Pt / Au / Ti / Pt / Au thin films sequentially from the inside to the outside The wiring layer, wherein the Ti layer in the Ti / Pt / Au / Ti / Pt / Au thin film wiring layer is 0.3 μm thick, the Pt layer is 1 μm thick, and the Au layer is 0.75 μm thick. Prepare the required metallization pattern on the wiring layer;
[0059] S3. Nickel gold is plated on the surface of the metal enclosure, wherein the material of the metal enclosure is 4J42 constant expansio...
Embodiment 2
[0067] S1. In this embodiment, aluminum nitride green porcelain is prepared by pressing and casting, and then the aluminum nitride green porcelain is sintered or printed to prepare a thick-film ceramic substrate with built-in passive components, and the thick-film ceramic The surface of the substrate is ground and polished;
[0068] S2. After cleaning the thick-film ceramic substrate in S1, use the magnetron sputtering method to make a metal thin-film wiring layer on the surface of the thick-film ceramic substrate, and sputter Ti / Ni / Au / Ti / Ni / Au thin films sequentially from inside to outside The wiring layer, in which the thickness of the Ti layer in the Ti / Ni / Au / Ti / Ni / Au thin film wiring layer is 0.3 μm, the thickness of the Ni layer is 2 μm, and the thickness of the Au layer is 2 μm, and then the metal thin film is wired by photolithography Prepare the required metallization pattern on the layer;
[0069]S3. Nickel gold is plated on the surface of the metal enclosure, wherei...
Embodiment 3
[0077] S1. In this embodiment, the LTCC green ceramics are prepared by pressing and casting, and then the LTCC green ceramics are sintered or printed with patterns to prepare a thick-film ceramic substrate with built-in passive components, and the surface of the thick-film ceramic substrate is treated. Grinding and polishing treatment;
[0078] S2. After cleaning the thick-film ceramic substrate in S1, use the magnetron sputtering method to make a metal thin-film wiring layer on the surface of the thick-film ceramic substrate, and sputter Ti / Pt / Au / Ti / Pt / Au thin films sequentially from the inside to the outside The wiring layer, in which the thickness of the Ti layer in the Ti / Pt / Au / Ti / Pt / Au thin film wiring layer is 0.6 μm, the thickness of the Pt layer is 3 μm, and the thickness of the Au layer is 3 μm, and then use photolithography to wire the metal thin film Prepare the required metallization pattern on the layer;
[0079] S3. Nickel gold is plated on the surface of the me...
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Abstract
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Application Information
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