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Preparation method of high-purity indium oxide

An indium oxide, high-purity technology, applied in the direction of chemical instruments and methods, inorganic chemistry, process efficiency improvement, etc., can solve the problems of long processing time, rising cost, difficult filtration, etc., achieve easy operation, reduce production cost, and connect strong effect

Active Publication Date: 2020-07-28
ENSHI ZHICHUN ELECTRONIC MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003]The current traditional method for preparing indium oxide is to add sodium hydroxide or ammonium salt to indium salt. impurity ions, environmental pollution, etc. At the same time, due to the extremely fine particle size of indium hydroxide, it is difficult to filter and the processing time is too long

Method used

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  • Preparation method of high-purity indium oxide

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preparation example Construction

[0025] A method for preparing high-purity indium oxide, comprising the following steps:

[0026] The first step: preparing an electrolyte solution with a pH value of 0.5-1, the composition and content of the electrolyte solution are: In 3 +70-100g / L, sodium chloride 70-90g / L, thiourea 1-15mg / L, potassium iodide 1-10mg / L, gelatin 0.1-0.5g / L, and the rest is ultrapure water;

[0027] The second step: first electrolyzing the above electrolytic solution to obtain indium obtained by electrolysis, then hydrolyzing the indium obtained by electrolysis to obtain indium obtained by hydrolysis, and then drying the indium obtained by hydrolysis to obtain indium obtained by drying;

[0028] Step 3: first heat the indium obtained by drying above to obtain a precursor, and then calcine the precursor to obtain high-purity indium oxide.

[0029] The pH value of the electrolyte is 0.8, and the composition and content of the electrolyte are: In 3+ 85g / L, sodium chloride 80g / L, thiourea 7.5mg / L...

Embodiment 1

[0046] Prepare In first 3 +70g / L, sodium chloride 70g / L, thiourea 1mg / L, potassium iodide 1mg / L, gelatin 0.1g / L, pH=0.5 electrolyte solution, and then the electrolyte solution is electrolyzed, hydrolyzed, and dried to obtain Dried the obtained indium (that is, high-purity indium), and then placed the dried indium in a graphite crucible for heating. The heating temperature was 180°C. After heating for 1 hour, the precursor was obtained, and then the precursor was placed in the muffle furnace for the procedure. The temperature was raised to 800° C. in 4 hours, and then kept at a constant temperature for 2 hours to finally obtain high-purity indium oxide.

Embodiment 2

[0048] Basic content is the same as embodiment 1, the difference is:

[0049] Prepare In first 3 +100g / L, sodium chloride 90g / L, thiourea 15mg / L, potassium iodide 10mg / L, gelatin 0.5g / L, electrolyte solution with pH=1, then, the heating temperature in graphite crucible is 200℃ .

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Abstract

The invention discloses a preparation method of high-purity indium oxide. The preparation method comprises the following steps: firstly, preparing an electrolyte with the pH value of 0.5-1, wherein the electrolyte comprises the following components in percentage by weight: 70-100 g / L of In<3+>, 70-90g / L of sodium chloride, 1-15 mg / L of thiourea, 1-10mg / L of potassium iodide, 0.1-0.5 g / L of gelatin and the balanced being ultrapure water; then sequentially carrying out electrolysis and hydrolysis on an electrolyte to obtain indium obtained by hydrolysis, carrying out spin-drying on the indiumobtained by hydrolysis to obtain indium, heating the indium to obtain a precursor, and calcining the precursor to obtain the high-purity indium oxide. The method is low in impurity content, low in cost, easy and convenient to operate, short in period and environmentally friendly.

Description

technical field [0001] The invention relates to a manufacturing process of indium oxide, belongs to the field of metal smelting and processing, and in particular relates to a preparation method of high-purity indium oxide. Background technique [0002] Indium oxide is a wide bandgap N-type semiconductor material. Its direct bandgap at room temperature is about 3.65eV, and its transparency in the visible light range exceeds 90%, and single crystal indium oxide has a high mobility (160cm 2 / (V s)), these properties make indium oxide a promising active material for next-generation thin-film transistors. [0003] At present, the traditional method of preparing indium oxide is to add sodium hydroxide or ammonium salt to indium salt. This process has the following defects: the use of reagents leads to increased costs, the introduction of additional impurity ions, environmental pollution, etc., and at the same time, due to the indium hydroxide particles The particle size is extre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00C25C1/22
CPCC01G15/00C25C1/22C01P2006/80Y02P10/20
Inventor 李斌罗泽亮
Owner ENSHI ZHICHUN ELECTRONIC MATERIAL CO LTD
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