Method and apparatus for effectively producing trifluoroamine oxide

Abstract

Disclosed is a method for producing trifluoroamine oxide, the method comprising: a step for producing an intermediate product by reacting nitrogen trifluoride and nitrous oxide in the presence of a reaction catalyst, wherein unreacted gas including nitrogen (N2) generated by the reaction is removed, and nitrogen trifluoride and nitrous oxide are further injected to produce the intermediate product; and a step for producing trifluoroamine oxide by reacting the intermediate product with sodium fluoride.

Description

technical field

[0001] The present invention relates to methods and apparatus for the efficient preparation of trifluoroamine oxides. Background technique

[0002] A thin film manufacturing method, such as semiconductor manufacturing, is widely known as a CVD (Chemical Vapor Deposition) method. In the case of forming a thin film such as a semiconductor in a CVD chamber, it is preferable to form the thin film on the designated area and target object in the CVD chamber, however the film forming material will unnecessarily deposit on other exposed surfaces in the CVD chamber superior. For example, material can be deposited on the surface of the inner wall of the chamber, product holding fixtures and pipelines, etc. Furthermore, accumulated material outside the target can cause short circuits during the deposition process. These short-circuiting materials or particles can contaminate the formed target or the film to be formed on the surface of the target. These problems degr...

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