The invention discloses a novel method for manufacturing p-type poly, which comprises the following steps of: providing a substrate, putting the substrate into a reaction cavity, and introducing 30000-40000 sccm of
oxygen at the temperature of 500-700 DEG C or introducing 5000-20000 sccm of
nitrous oxide gas at the temperature of 200-700 DEG C, so that a tunneling
oxide layer Tunnel SiOx with the thickness of 0.1-2 nm grows on the back surface of a battery piece; the preparation method comprises the following steps of: adding
nitrogen oxide or
nitrous oxide into a substrate, removing
oxygen or
nitrous oxide at the temperature of between 200 and 700 DEG C, and introducing
mixed gas of 3000 to 4000sccm of
silane, 100 to 1000sccm of
borane and 2000 to 20000sccm of
hydrogen, so that a bottom layer Poly with the thickness of between 5 and 100nm grows on the substrate; the preparation method comprises the following steps of: removing
mixed gas of
silane,
borane and
hydrogen at the temperature of between 200 and 700 DEG C, introducing
oxygen at the temperature of between 30000 and 40000 sccm or
nitrous oxide gas at the temperature of between 5000 and 20000 sccm, and generating a
silicon oxide (SiOx) multifunctional laminated layer with a certain thickness of between 0.5 and 30 nanometers. According to the method, the original p-type Poly layer is initially prepared in a PECVD mode, and then auxiliary
doping is carried out through
laser and annealing processes so as to accurately control the effective
doping concentration of
boron atoms.