Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for measuring photoelectron spectroscopy of polymer sublayer by utilizing plasma etching

A photoelectron spectroscopy and plasma technology, which is applied in the field of material photoelectron spectroscopy analysis, can solve the problems of unsuitable repeated test applications, high cost of argon cluster ion etching technology, etc., and achieves low cost and wide application prospects. Effect

Pending Publication Date: 2020-08-14
XI AN JIAOTONG UNIV
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the high cost of argon cluster ion etching technology is not suitable for repeated testing applications

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for measuring photoelectron spectroscopy of polymer sublayer by utilizing plasma etching
  • Method for measuring photoelectron spectroscopy of polymer sublayer by utilizing plasma etching

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0027] (1) Wash the ITO glass substrate with deionized water, acetone and isopropanol for 10 minutes in sequence, and dry it with nitrogen gas for later use. After treating the ITO glass substrate with UV-ozone for 15 minutes, use toluene as a solvent to prepare n-octyltrichlorosilane solution with a concentration of 3.75‰, immerse the ITO glass substrate in it and let it stand for modification for 2 hours, and control the temperature at 85 degrees Celsius .

[0028] (2) Using chloroform as a solvent and poly(3-hexylthiophene) (P3HT) as a solute, prepare a polymer solution with a concentration of about 5 mg / mL. P3HT thin films 1 and 2 were prepared by spin coating on modified ITO glass substrates, both with a thickness of about 50 nm. P3HT thin films 1 and 2 were obtained under the same preparation conditions with no significant difference.

[0029] (3) The ultraviolet photoelectron spectroscopy of the P3HT thin film 1 is detected by an ultraviolet photoelectron spectroscopy...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for measuring polymer sublayer photoelectron spectroscopy by plasma etching, and the method comprises the following steps: (1) cleaning two ITO glass substrates, performing blow-drying with nitrogen, carrying out ultraviolet-ozone treatment, and performing modifying in an n-octyl trichlorosilane solution; (2) preparing polymer films on the two modified ITO glass substrates, and respectively marking the polymer films as a film 1 and a film 2; (3) detecting the ultraviolet electron spectrum of the polymer film 1 by using an ultraviolet electron spectrometer, etching the polymer film 2 by using low-pressure (20 Pascal) oxygen plasma, and detecting the ultraviolet electron spectrum of the polymer film 2. According to the invention, the low-pressure oxygen plasma etching technology is combined with an ultraviolet electronic energy spectrum method for detecting the ultraviolet light electron energy spectra, namely sub-layer photoelectron energy spectra, at different depth positions of the polymer semiconductor thin film, and obtaining energy level distribution, thereby facilitating the exploration of the relation between the properties of the polymer semiconductor thin film and the properties of photoelectric devices. The method has good application prospects in the field of thin film analysis.

Description

technical field [0001] The invention belongs to the technical field of material photoelectron energy spectrum analysis, in particular to a method for measuring polymer sublayer photoelectron energy spectrum by plasma etching. Background technique [0002] Polymer semiconducting thin films are flexible, inexpensive, and solution-processable, and hold great promise for next-generation optoelectronic devices1,2. The rational distribution of the energy levels of polymer semiconductors has a great influence on the improvement of the performance of optoelectronic devices. Many techniques can be used to detect the energy level distribution of semiconductors, including cyclic voltammetry3, Kelvin probe force microscopy4 and photoelectron spectroscopy5. Among them, the most commonly used technique is ultraviolet photoelectron spectroscopy, which is mainly used to detect the surface information of thin films. However, for polymer semiconductors, during solution processing, material ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N23/2273
CPCG01N23/2273
Inventor 卜腊菊翟晨阳鲁广昊
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com