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Novel solar cell and preparation method thereof

A solar cell, a new type of technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of emitter damage and complex production process, and achieve the effect of improving production efficiency, reducing process complexity, and simplifying production process

Inactive Publication Date: 2020-08-25
上饶捷泰新能源科技有限公司
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Problems solved by technology

[0005] The purpose of the present invention is to provide a new type of solar cell and its preparation method to solve the problem of emitter damage caused by the complex production process of solar cells in the prior art

Method used

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  • Novel solar cell and preparation method thereof

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specific Embodiment approach

[0035] The core of the present invention is to provide a method for preparing a novel solar cell, and a schematic flow diagram of a specific embodiment thereof is as follows: figure 1 As shown, it is referred to as the specific embodiment one, including:

[0036] S101 : performing double-sided oxidation on the P-type base silicon to obtain a front-side oxide layer and a back-side oxide layer.

[0037] Before the double-sided oxidation of the P-type base silicon, the surface of the P-type base silicon can also be polished and cleaned to remove the surface damage layer of the P-type silicon base. The reflectivity of the polished silicon wafer is controlled at 30 %-40%, and further, the surface polishing is alkali polishing.

[0038] The thickness of the front oxide layer and the back oxide layer is in the range of 1.5-2.5 nanometers.

[0039] S102: Perform polysilicon deposition on the surface of the front oxide layer and the backside oxide layer to obtain a front polysilicon ...

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Abstract

The invention discloses a preparation method of a novel solar cell, and the method comprises the steps: carrying out the double-side oxidation of P-type substrate silicon, and then carrying out the polycrystalline silicon deposition to obtain a front polycrystalline silicon layer and a back polycrystalline silicon layer; performing phosphorus diffusion on the back polycrystalline silicon layer toobtain an N-type doped polycrystalline silicon layer; arranging a protective layer on the surface of the N-type doped polycrystalline silicon layer to obtain a solar cell to be etched; removing a front oxide layer and the front polycrystalline silicon layer in a front non-metal region; removing a mask layer and the protective layer to obtain a solar cell front object; carrying out boron doping onthe front surface of the solar cell front object; and sequentially arranging a surface passivation layer and a surface electrode on the front surface and the back surface of the boron-doped solar cellfront object to obtain the novel solar cell. According to the invention, the production process of the solar cell is simplified, the emitter damage and non-uniformity are reduced, and the cell efficiency is improved. The invention also provides the novel solar cell with the above advantages.

Description

technical field [0001] The invention relates to the field of photovoltaic new energy, in particular to a novel solar cell and a preparation method thereof. Background technique [0002] In solar cells, the PN junction is a necessary condition for generating photovoltaic current. Taking a P-type PERC cell as an example, an N-type emitter prepared by diffusion of phosphorus on a P-type silicon substrate forms a PN junction with the P-type silicon substrate to generate a built-in electric field. Therefore, the preparation of the emitter in solar cells is very important, and the uniformity and consistency of the emitter seriously affect the open-circuit voltage and short-circuit current of the cell. [0003] However, at present, in order to improve the photoelectric conversion efficiency of solar cells and reduce the carrier recombination inside the cells, the industry has to perform various treatments on the surface of the solar cells and set up various epitaxial layers, which ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0216H01L31/068
CPCH01L31/02167H01L31/1804H01L31/1868H01L31/0682Y02E10/546Y02E10/547Y02P70/50
Inventor 付少剑钟潇白玉磐陈园
Owner 上饶捷泰新能源科技有限公司
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