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A method for preparing transparent conductive film with high photoelectric stability by magnetron sputtering

A transparent conductive film, magnetron sputtering technology, applied in sputtering coating, metal material coating process, vacuum evaporation coating and other directions, can solve problems such as photoelectric performance degradation, achieve photoelectric stability improvement, excellent photoelectric performance , the effect of improving light transmittance

Active Publication Date: 2021-06-08
HARBIN INST OF TECH
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Problems solved by technology

[0005] The present invention aims to solve the problem that the existing Ag-based multilayer film will deteriorate in photoelectric performance under long-term or high-temperature conditions, and provides a method for preparing a transparent conductive film with high photoelectric stability by magnetron sputtering, which ensures the same excellent performance. At the same time, the high temperature stability in the air is greatly improved compared with the existing films with the same structure

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  • A method for preparing transparent conductive film with high photoelectric stability by magnetron sputtering
  • A method for preparing transparent conductive film with high photoelectric stability by magnetron sputtering
  • A method for preparing transparent conductive film with high photoelectric stability by magnetron sputtering

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specific Embodiment approach 1

[0019] Specific Embodiment One: This embodiment is a method for preparing a transparent conductive film with high photoelectric stability by magnetron sputtering, which is carried out according to the following steps:

[0020] 1. Install the AZO target, Ni target and Ag target on the target position of the multi-target magnetron sputtering equipment, fix the cleaned substrate on the tray, put it into the chamber, and then turn on the equipment to vacuum Draw to 1×10 -4 Pa~5×10 -4 Pa;

[0021] 2. Introduce argon gas at room temperature, and adjust the flow rate of argon gas to 15sccm~40sccm. First, perform pre-sputtering on the AZO target. 1. Under the conditions of argon gas flow rate of 15sccm~40sccm and power of 100W~150W, sputter the AZO target until the thickness of the first AZO layer is 25nm~55nm, then pre-sputter the Ag target, and the pre-sputtering time is 3min ~15min, then at room temperature, vacuum pressure 0.5Pa ~ 1Pa, argon gas flow rate 15sccm ~ 40sccm, and p...

specific Embodiment approach 2

[0027] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the cleaned substrate described in step 1 is in the shape of a square with a side length of 1 cm to 2 cm. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0028] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the cleaning process of the cleaned substrate described in step 1 is: place the substrate in an anhydrous ethanol solution for ultrasonic cleaning for 10 minutes , and rinse with deionized water. Others are the same as in the first or second embodiment.

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Abstract

A method for preparing a transparent conductive film with high photoelectric stability by magnetron sputtering, the invention relates to a method for preparing a transparent conductive film. The invention aims to solve the problem that the photoelectric performance of the existing Ag-based multilayer film will deteriorate under long-term or high-temperature conditions. Method: 1. Install the AZO target, Ni target and Ag target on the target position of the multi-target magnetron sputtering equipment, and vacuumize; 2. Sputter the AZO target until the thickness of the first AZO layer is 25nm-55nm , Sputtering the Ag target until the thickness of the Ag layer is 6nm-10nm, sputtering the Ni target until the thickness of the Ni layer is 2nm-4nm, sputtering the AZO target until the thickness of the second AZO layer is 25nm-55nm; 3. Turn off all power ,sampling. The invention can be used in fields such as solar cell electrodes and flat panel displays that require high photoelectric properties and excellent stability for transparent conductive films.

Description

technical field [0001] The invention relates to a method for preparing a transparent conductive film. Background technique [0002] At present, transparent conductive films (TCF) are widely used in many fields such as display devices, solar cells, low-emissivity (low-E) glass, and electromagnetic shielding windows. The current industrialized TCF is mainly a transparent conductive oxide (TCO) - tin-doped indium oxide (Indium-doped Tin Oxide, ITO). , poor mechanical properties, high photoelectric performance needs to be obtained through high-temperature process and relatively high production cost and other constraints. In addition, indium (In) is easy to be reduced, easy to diffuse, and has toxicity and other problems. Therefore, ITO thin films cannot meet the requirements of related fields at the same time. Requirements for high transmittance, high conductivity, stability, manufacturing process and cost. Metal thin films have the advantages of low resistivity and good ducti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/18C23C14/16
CPCC23C14/08C23C14/165C23C14/185C23C14/352
Inventor 朱嘉琦张昕宇杨磊杨振怀闵萍萍张森
Owner HARBIN INST OF TECH
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