Silicon carbide growth method

Abstract

The invention provides a method for growing silicon carbide, which includes the following steps: S1, filling silicon carbide powder, silicon carbide powder and mixed powder of cerium-containing compound powder, and silicon carbide powder into a graphite crucible in sequence, to Form the first silicon carbide powder layer, the mixed powder layer of silicon carbide powder and cerium-containing compound powder, and the second silicon carbide powder layer from bottom to top in the graphite crucible; S2, will be stuck with 4H-SiC seeds The graphite cover of the crystal layer is covered on the top of the graphite crucible; S3, the graphite crucible covered with the graphite cover is put into the chamber of the growth furnace to perform a physical vapor transport process to obtain a 4H-SiC crystal. The silicon carbide growth method provided by the invention can stabilize the crystal in the 4H crystal form under the premise of ensuring the crystal growth rate and crystal quality.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for growing silicon carbide. Background technique [0002] As a third-generation wide bandgap semiconductor material, silicon carbide has the advantages of wide bandgap, high critical breakdown electric field, high thermal conductivity, high carrier saturation concentration, stable chemical properties, high hardness, and wear resistance. Silicon carbide devices are used in aviation , Aerospace exploration, nuclear energy development, petroleum, geothermal drilling exploration, automobile engine and other fields have important applications. [0003] More than 200 crystal forms of silicon carbide have been discovered, and the most common crystal forms are 3C-SiC, 4H-SiC, 6H-SiC and 15R-SiC. Among them, 4H-SiC is widely used in the electronics industry due to its excellent electrical properties such as wider band gap and higher electron mobility. [0004] In terms ...

AI Technical Summary

Problems solved by technology

However, reducing the growth temperature will not only slow down the growth rate of the crystal, prolong the growth period of the crystal, which is not conducive to the industrialization of crystal growth, but also increase the corrosion of the graphite crucible used for the growth of silicon carbide crystals at low temperature

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