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Structure of gapless laminated film capacitor

A film capacitor, gapless technology, applied in the direction of film/thick film capacitors, multilayer capacitors, fixed capacitor electrodes, etc., can solve problems such as affecting energy storage density and affecting high frequency characteristics of capacitors

Inactive Publication Date: 2020-09-04
GUILIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, most film capacitors are winding structures. Although they have a series of advantages, they will affect the high-frequency characteristics of the capacitor (the relatively large parasitic inductance generated by the winding structure), and there are gaps between the winding structures, which will affect the energy. storage density

Method used

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  • Structure of gapless laminated film capacitor
  • Structure of gapless laminated film capacitor
  • Structure of gapless laminated film capacitor

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Embodiment Construction

[0018] The working principle and implementation method of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0019] In an environment protected by argon, a layer of metal aluminum is sprayed on the surface of the aluminum base material by the electric explosion wire spraying method; then the sample is placed in an oxygen (nitrogen) environment and oxidized (nitrided) at a high temperature to form a layer of oxide Aluminum (aluminum nitride) dielectric layer; then repeat the above steps, and finally make the following figure 1 In the gapless stacked thin film structure shown, a thin film capacitor can be prepared by leading out positive and negative electrodes respectively.

[0020] when to give figure 1 When the film capacitor shown is charged, the positive and negative electrodes of the capacitor are charged with positive and negative charges respectively, with a dielectric layer between the electrodes. It is pre...

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Abstract

The invention discloses a structure of a gapless laminated film capacitor, and belongs to the field of principles and preparation of novel electronic components. The structure of the film capacitor isformed by stacking a metal conducting layer thin film and a metal oxide or nitride dielectric layer thin film layer by layer, no gap exists between the layers, the layers are tightly combined, and apositive electrode and a negative electrode of the capacitor are led out from the adjacent conducting layers respectively. The film capacitor adopting the structure has the characteristics of multiplelayers, no gap between the layers, small interlayer spacing and the like, so that the film capacitor has the advantages of large capacity, wide working temperature range, low parasitic inductance, low equivalent series impedance (ESR) and the like, and is suitable for being applied to a high-frequency circuit.

Description

technical field [0001] The invention belongs to the field of preparation of electronic components, in particular to a structure of a gapless laminated film capacitor. Background technique [0002] Capacitors in RF circuits need to have good high-frequency characteristics and low loss, especially with the development of mobile communication equipment, RF circuits are required to achieve low power consumption, wide operating temperature range, and small size while ensuring Output Power. Therefore, capacitors in radio frequency circuits not only need to have high energy storage density, but also need to have good temperature stability. [0003] There are many kinds of capacitors, among which film capacitors are made of conductive layer and dielectric layer film by winding and stacking, etc., with high insulation resistance, excellent frequency characteristics, small dielectric loss, fast charge and discharge speed, long life, non-polarity, etc. Features, are widely used in ra...

Claims

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Application Information

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IPC IPC(8): H01G4/005H01G4/08H01G4/10H01G4/33
CPCH01G4/005H01G4/08H01G4/10H01G4/33
Inventor 杨家志蒋存波应安文尹新哲
Owner GUILIN UNIVERSITY OF TECHNOLOGY
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