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Diamond wire for cutting large-size photovoltaic silicon wafer and manufacturing method thereof

A manufacturing method and diamond wire technology, applied in the direction of manufacturing tools, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as increased TTV defect ratio, reduce the probability of micro-powder adhesion and agglomeration, improve performance, and increase toughness and strength Effect

Active Publication Date: 2020-09-08
杨凌美畅新材料股份有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the cutting problems such as the line marks and the increase of TTV defect ratio when the diamond wire prepared by the prior art cuts photovoltaic large-size silicon wafers, and improve the cutting yield of photovoltaic large-size silicon wafers, the present invention discloses a method for cutting photovoltaic large-size silicon wafers. Diamond wire for sheet and manufacturing method thereof

Method used

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  • Diamond wire for cutting large-size photovoltaic silicon wafer and manufacturing method thereof
  • Diamond wire for cutting large-size photovoltaic silicon wafer and manufacturing method thereof

Examples

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Effect test

Embodiment 1

[0049] like figure 1As shown, this embodiment provides a manufacturing method of diamond wire for cutting photovoltaic large-size silicon wafers, which includes the following steps: (1) pretreatment, processing the diamond fine powder and the busbar; (2) preplating, electroplating on the surface of the busbar A layer of nickel coating; (3) Sanding, using the principle of composite electroplating to fix the diamond powder on the busbar; (4) Thickening, continue to electroplate the nickel coating to make the diamond powder firmly fixed; (5) After treatment, the diamond powder made of Line for cleaning and aging treatment.

[0050] Wherein, in step (1), the diamond micropowder is treated by modifying the diamond micropowder, which can improve the sand-loading ability of the diamond micropowder and reduce the adhesion and agglomeration probability of the diamond micropowder. The specific treatment method includes: first, put the diamond micro-powder coated with a high-phosphorus ...

Embodiment 2

[0058] like figure 1 As shown, this embodiment provides a manufacturing method of diamond wire for cutting photovoltaic large-size silicon wafers, which includes the following steps: (1) pretreatment, processing the diamond fine powder and the busbar; (2) preplating, electroplating on the surface of the busbar A layer of nickel coating; (3) Sanding, using the principle of composite electroplating to fix the diamond powder on the busbar; (4) Thickening, continue to electroplate the nickel coating to make the diamond powder firmly fixed; (5) After treatment, the diamond powder made of Line for cleaning and aging treatment.

[0059] Wherein, in step (1), the diamond micropowder is treated by modifying the diamond micropowder, which can improve the sand-loading ability of the diamond micropowder and reduce the adhesion and agglomeration probability of the diamond micropowder. The specific treatment method includes: first, put the diamond micro-powder coated with a high-phosphorus...

Embodiment 3

[0067] like figure 1 As shown, this embodiment provides a manufacturing method of diamond wire for cutting photovoltaic large-size silicon wafers, which includes the following steps: (1) pretreatment, processing the diamond fine powder and the busbar; (2) preplating, electroplating on the surface of the busbar A layer of nickel coating; (3) Sanding, using the principle of composite electroplating to fix the diamond powder on the busbar; (4) Thickening, continue to electroplate the nickel coating to make the diamond powder firmly fixed; (5) After treatment, the diamond powder made of Line for cleaning and aging treatment.

[0068] Wherein, in step (1), the diamond micropowder is treated by modifying the diamond micropowder, which can improve the sand-loading ability of the diamond micropowder and reduce the adhesion and agglomeration probability of the diamond micropowder. The specific treatment method includes: first, put the diamond micro-powder coated with a high-phosphorus...

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Abstract

The invention discloses a diamond wire for cutting a large-size photovoltaic silicon wafer and a manufacturing method thereof. The manufacturing method specifically comprises the steps that 1, pretreatment is conducted, wherein diamond micro powder and a bus are treated; 2, pre-plating is conducted, wherein a nickel coating is formed on the surface of the bus through electroplating; 3, sanding isconducted, wherein the diamond micro powder is fixed to the bus through the composite electroplating principle; 4, thickening is conducted, wherein electroplating continues to obtain the nickel coating, so that the diamond micro powder is firmly fixed; and 5, aftertreatment is conducted, wherein the manufactured diamond wire is cleaned and subjected to aging treatment. By using the diamond wire manufactured through the manufacturing method, the large-size photovoltaic silicon wafer can be stably cut, the rate of defections such as saw marks and TTV is controlled to be 0.5%-4%, and the yield ofcut sections is not lower than 97%.

Description

technical field [0001] The invention belongs to the field of hard and brittle material cutting and processing, in particular to a diamond wire for cutting photovoltaic large-size silicon wafers and a manufacturing method thereof. Background technique [0002] With the development of the photovoltaic industry, in order to reduce production costs, the size of silicon wafers has been increasing, gradually increasing from 100mm to 156.75mm, and then to the 166mm and 210mm size products launched in 2019. Large photovoltaic silicon wafers will be the development of the photovoltaic industry. The mainstream route, the market share of 210mm size silicon wafers will gradually expand. [0003] With the continuous expansion of the size of silicon wafers, the supporting cutting equipment and cutting technology are constantly updated, and the traditional mortar cutting has been completely replaced by the electroplated diamond wire multi-wire cutting technology. Compared with mortar cutt...

Claims

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Application Information

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IPC IPC(8): C25D15/00C25D7/06C25D3/12C25D5/14C25D5/50C25D21/00C23C18/32B28D5/04
CPCC25D15/00C25D7/0607C25D3/12C25D5/14C25D5/50C25D21/00C23C18/32B28D5/0058B28D5/045Y02P70/50
Inventor 郭金城闫泽鹏郭强刘海涛
Owner 杨凌美畅新材料股份有限公司
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