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Tetrahedral amorphous carbon film, as well as preparation method and application thereof

A tetrahedral amorphous carbon and matrix technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problem of film macro-large particle deposition pollution, short arc spot life, and difficult to obtain tetrahedral amorphous Carbon film, etc.

Inactive Publication Date: 2020-09-11
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, cathodic vacuum arc deposition technology, which has the advantages of high ionization rate, high deposition rate, and mature technology, is the main method for preparing tetrahedral amorphous carbon films. During the process, the arc spot life is short, the process stability is poor, and the co-deposition pollution of macroscopic large particles in the film is serious
Magnetron sputtering has the advantages of low temperature deposition, wide application of substrates, dense and smooth coating, etc., but the target ionization rate is insufficient, and the obtained amorphous carbon film structure is sp 2 Mainly, low hardness, difficult to obtain tetrahedral amorphous carbon film

Method used

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  • Tetrahedral amorphous carbon film, as well as preparation method and application thereof
  • Tetrahedral amorphous carbon film, as well as preparation method and application thereof

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preparation example Construction

[0020] An aspect of the embodiments of the present invention provides a method for preparing a tetrahedral amorphous carbon film, which includes:

[0021] Etching the surface of the substrate; and,

[0022] Using high-power pulse magnetron sputtering technology, graphite target is used as the target material, and a tetrahedral amorphous carbon film is deposited on the surface of the substrate, wherein the high-power pulse duty ratio is 1% to 5%, and the sputtering power is 700~1000W, the substrate temperature is less than 50℃.

[0023] In some more specific embodiments, the preparation method includes: using high-power pulsed magnetron sputtering technology, using a graphite target as a target material, and an inert gas as a working gas, applying a pulsed negative bias to the substrate, thereby A tetrahedral amorphous carbon film is deposited on the surface of the substrate, wherein the chamber pressure is 0.2-0.3Pa, the high-power pulse frequency is 200-250Hz, the pulse widt...

Embodiment 1

[0041] After the substrate was cleaned, it was fixed in a vacuum chamber and vacuumed to 5.0×10 -3 Below Pa, then pass argon gas into the cavity, adjust the cavity pressure to 2Pa, apply pulse negative bias voltage to the substrate to generate gas glow discharge, and etch the substrate? min, the substrate pulse negative bias voltage is -600V; after that, argon gas is introduced into the cavity, and the cavity pressure is adjusted to 0.25Pa, and a tetrahedral amorphous carbon film is prepared on the surface of the substrate by high-power pulse magnetron sputtering. It is a graphite target, where the high-power pulse frequency is 200Hz, the pulse width is 50μs, the pulse duty ratio is 1%, the sputtering power is 700W, and the pulse negative bias voltage -50V is applied to the substrate during the sputtering process, and the substrate temperature is from room temperature to 35°C, the deposition time is 30min, after testing, in the prepared tetrahedral amorphous carbon film struct...

Embodiment 2

[0043]After the substrate was cleaned, it was fixed in a vacuum chamber and vacuumed to 5.0×10 -3 Below Pa, then pass argon gas into the cavity, adjust the cavity pressure to 2Pa, apply pulse negative bias voltage to the substrate to generate gas glow discharge, etch the substrate, and the substrate pulse negative bias voltage is -600V; Argon gas was introduced into the cavity, and the pressure of the cavity was adjusted to 0.25 Pa. A tetrahedral amorphous carbon film was prepared on the surface of the substrate by high-power pulse magnetron sputtering. The target material was a graphite target, and the high-power pulse frequency was 200 Hz. The width is 50μs, the pulse duty ratio is 1%, the sputtering power is 1000W, the pulse negative bias voltage -50V is applied to the substrate during the sputtering process, the substrate temperature is from room temperature to 45°C, and the deposition time is 30min. After testing, the prepared sp in the tetrahedral amorphous carbon film s...

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Abstract

The invention discloses a tetrahedral amorphous carbon film, as well as a preparation method and application thereof. The preparation method of the tetrahedral amorphous carbon film comprises the steps of carrying out etching treatment on the surface of a substrate; and then adopting a high power pulse magnetron sputtering technology, adopting a graphite target as a target material, and depositingon the surface of the substrate so as to form the tetrahedral amorphous carbon film, wherein the high power pulse duty ratio ranges from 1 percent to 5 percent, the sputtering power ranges from 700 to 1000W, the temperature of the substrate is smaller than 50 DEG C, the content of sp3 in a structure of the tetrahedral amorphous carbon film is larger than 75 percent, the roughness of the tetrahedral amorphous carbon film is smaller than 2nm, and the hardness of the tetrahedral amorphous carbon film is larger than 40GPa. The tetrahedral amorphous carbon film prepared by adopting high power pulse magnetron sputtering for sputtering the graphite target has high smoothness; meanwhile, through the optimized pulse duty ratio and the optimized sputtering power, the tetrahedral amorphous carbon film with the content of sp3 exceeding 75 percent and the hardness being larger than 40GPa is prepared at low temperature; and the tetrahedral amorphous carbon film prepared by the invention has a better application prospect in the surface of a base material with heat sensitivity.

Description

technical field [0001] The invention belongs to the technical field of film preparation, and in particular relates to a tetrahedral amorphous carbon film and its preparation method and application. Background technique [0002] Diamond-like carbon film is a general term for a class of amorphous carbon film materials. According to whether the film composition contains hydrogen, it can be divided into hydrogenated diamond-like carbon film and hydrogen-free tetrahedral amorphous carbon film. Compared with hydrogenated diamond-like carbon films, tetrahedral amorphous carbon (ta-C) films have higher sp 3 Bond content, higher hardness and modulus of elasticity, better anti-wear lubricity, better thermal stability (~650°C), and smoother surface, so it is more suitable for aviation, aerospace, high precision under harsh working conditions Tooling, microelectronics, magnetic storage and other application fields. Especially with the rapid development of magnetic storage density in r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/54
CPCC23C14/3485C23C14/35C23C14/0605C23C14/54
Inventor 左潇汪爱英张栋陈仁德李昊
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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