A low-temperature synthesis method and application of silicon carbide-coated diamond composite powder

A synthesis method and technology of composite powder, which can be used in transportation and packaging, metal processing equipment, etc., can solve the problems of affecting thermal conductivity and not forming a continuous structure, and achieve the effect of improving thermal conductivity, simple method and good repeatability.

Active Publication Date: 2021-09-24
HUNAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this silicon carbide is obtained by alloying the matrix without forming a continuous structure, and the content of Si in the Al matrix will seriously affect its intrinsic thermal conductivity

Method used

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  • A low-temperature synthesis method and application of silicon carbide-coated diamond composite powder
  • A low-temperature synthesis method and application of silicon carbide-coated diamond composite powder
  • A low-temperature synthesis method and application of silicon carbide-coated diamond composite powder

Examples

Experimental program
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Effect test

Embodiment 1

[0048] The silicon mass fraction is 7wt.%, 12.6wt.%, 20wt.%, 30wt.%, 40wt.%, 55wt.%, 70wt.%, 80wt.%, 90wt.%, 100wt.% aluminum silicon powder ( Composed of silicon powder with a particle size of 5-15 microns and aluminum powder with a particle size of 3-10 microns) are uniformly mixed with cleaned diamond particles (30-400 microns in particle size), wherein the aluminum-silicon mixed powder is mixed with The mass ratio of diamond particles is 1:1. Then put the evenly mixed diamond-aluminum-silicon powder into a vacuum tube annealing furnace, keep it warm at 800°C for 1 hour, cool it rapidly at a cooling rate of 40°C / min, and finally soak it in 5mol / L NaOH solution to The unreacted aluminum-silicon powder is removed, then washed with water and dried to obtain a silicon carbide-coated diamond composite powder. The morphology of silicon carbide prepared under different silicon mass fractions is as follows: figure 2 shown. SEM results show that when the mass fraction of silicon...

Embodiment 2

[0050] The SiC-coated diamond composite powder synthesized under the condition of 70wt.% silicon mass fraction in Example 1 was characterized by XRD. The test parameters: the scanning speed of the full spectrum (20°-90°) was 10° / min, and the narrow spectrum (25°-39°, 55°-75°) with a scanning speed of 1° / min, the results are as follows image 3 shown. Since the strong diamond peak masked the intensity of the SiC peak, only the diamond peak and the less obvious SiC peak were observed in the full spectrum. But in the two narrow caps, silicon carbide peaks can be clearly observed, which indicates that the particles observed in Example 1 are silicon carbide. From Example 1, it can be seen that under the annealing condition of 800°C for 1 hour, the mass fraction of silicon in the aluminum silicon powder has a significant impact on the distribution and morphology of the synthesized silicon carbide particles.

Embodiment 3

[0052] The silicon carbide coated diamond composite powder synthesized under the condition of silicon mass fraction of 70wt.% in Example 1 was characterized by Raman and XPS, and the corresponding results are as follows Figure 4 , Figure 5 shown. It is found from the figure that the series of results of Raman and XPS further confirmed that the particles on the surface of these composite powders are silicon carbide, which shows that this method can successfully synthesize silicon carbide on the surface of diamond at low temperature.

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Abstract

The invention relates to a low-temperature synthesis method and application of silicon carbide-coated diamond composite powder. Silicon carbide-coated diamond composite powder is formed by mechanical mixing of aluminum powder, silicon powder and diamond particles at a temperature not higher than 1000°C. The specific synthesis method is as follows: first, uniformly mix aluminum powder, silicon powder and diamond particles, put them into a vacuum tube furnace, keep the temperature for 0.5-3 hours under the condition of not higher than 1000 ℃, and quickly cool down the diamond surface. The silicon carbide coating layer is obtained, then the unreacted aluminum powder and silicon powder are washed off with NaOH solution, and the silicon carbide-coated diamond composite powder can be obtained by sieving; the silicon carbide-coated diamond composite powder obtained by this method is applied to The preparation of diamond / aluminum-based composite material improves the thermal conductivity of the composite material, suppresses the formation of aluminum carbide phase at the interface, and improves the service stability of the diamond / aluminum composite material in a humid environment.

Description

technical field [0001] The invention relates to a low-temperature synthesis method and application of silicon carbide-coated diamond composite powder, belonging to the field of diamond surface treatment. Background technique [0002] Due to its excellent properties such as high hardness, high wear resistance, strong corrosion resistance, high thermal conductivity and low expansion coefficient, diamond is often prepared into metal matrix composites and widely used in various fields. However, due to the influence of the special crystal structure and surface characteristics of diamond itself, in the application of the friction field, it was found that diamond particles fell off due to non-wetting of the diamond and metal substrates, resulting in rapid loss of diamond composite workpieces. In the application in the field of electronic packaging, diamond and copper matrix (aluminum matrix) show no reaction (reaction anisotropy or excessive reaction), so that there is a high inter...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F1/02B22F9/04C22C1/05C22C26/00
CPCB22F9/04C22C1/05C22C26/00B22F1/145B22F1/16
Inventor 杨武霖桑建权周灵平朱家俊符立才李德意
Owner HUNAN UNIV
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