Efficient cadmium telluride thin-film solar cell and preparation method thereof

A technology of solar cells and cadmium telluride, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as loss of battery stability, and achieve high-efficiency stability, performance improvement, and excellent initial performance.

Active Publication Date: 2020-10-02
CHINA TRIUMPH INT ENG
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Problems solved by technology

[0003] However, the current improvement of the efficiency of cadmium telluride thin-film batteries has reached a certain bottleneck, because it is difficult to further improve the Voc, and because the existing high-efficiency batteries are all doped with copper, and the introduction of copper will also damage the stability of the battery

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  • Efficient cadmium telluride thin-film solar cell and preparation method thereof

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preparation example Construction

[0035] The method for preparing the above-mentioned high-efficiency cadmium telluride thin film solar cell includes the following steps:

[0036] S1, depositing the window layer 2 on the substrate layer 1;

[0037] S2, depositing the light absorption layer 3 on the window layer 2, and performing activation annealing treatment on the light absorption layer 3 through an activation annealing process;

[0038] S3. Depositing the back electrode layer 4 on the light absorption layer 3 to obtain a cadmium telluride thin film solar cell;

[0039] S4. The battery prepared in step S3 is etched and cleaned with hydrochloric acid with a mass concentration of 0.05-5%, and then a zinc telluride film layer is deposited on the battery by magnetron sputtering, and the thickness of the zinc telluride film layer 20-80nm;

[0040] S5. The battery processed in step S4 is first scribed by laser 1, and the battery is divided into 200-300 units, and then photoresist coating and development are performed to fi...

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Abstract

The invention discloses an efficient cadmium telluride thin-film solar cell and a preparation method thereof. The efficient cadmium telluride thin-film solar cell comprises a substrate layer, a windowlayer, a light absorption layer and a back electrode layer which are sequentially arranged from bottom to top, wherein the window layer is made of magnesium-doped zinc oxide, the light absorption layer is an arsenic-tellurium-selenium-cadmium-doped thin film layer, and the back electrode layer is made of a composite metal material of molybdenum, aluminum and chromium. According to the present invention, the tellurium-selenium-cadmium thin film layer is doped with a proper amount of As instead of Cu in an electric injection regeneration manner, so that the high p-type doping density is realized, Vocs is greater than 1V, the conversion efficiency is greater than 23%, the conversion efficiency is high, and the whole preparation process is simple to operate and easy to control.

Description

Technical field [0001] The present invention relates to the technical field of thin film solar cells, in particular to a high-efficiency cadmium telluride thin film solar cell and a preparation method thereof. Background technique [0002] Cadmium telluride solar cells have the advantages of convenient manufacturing, lower cost and lighter weight than monocrystalline silicon solar cells. Cadmium telluride thin-film solar cells are abbreviated as CdTe cells, which are thin-film solar cells based on the heterojunction of p-type CdTe and n-type CdSe. Generally standard cadmium telluride thin film solar cells are composed of five layers: back electrode, back contact layer, CdTe absorber layer, CdTe window layer, and TCO layer. The production cost of cadmium telluride thin-film solar cells is much lower than that of crystalline silicon and other solar cell technologies. Secondly, it is very consistent with the solar spectrum and can absorb more than 95% of sunlight. On the basis of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0296H01L31/0445H01L31/0224H01L31/18
CPCH01L31/02963H01L31/02966H01L31/0445H01L31/022425H01L31/1832Y02E10/50Y02P70/50H01L31/073H01L31/1864
Inventor 彭寿陈瑛殷新建周显华魏梦楠
Owner CHINA TRIUMPH INT ENG
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