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A kind of high-efficiency cadmium telluride thin-film solar cell and its preparation method

A technology of solar cells and cadmium telluride, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as loss of battery stability, and achieve high-efficiency stability, improved performance, and high p-type doping density.

Active Publication Date: 2021-06-25
CHINA TRIUMPH INT ENG
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Problems solved by technology

[0003] However, the current improvement of the efficiency of cadmium telluride thin-film batteries has reached a certain bottleneck, because it is difficult to further improve the Voc, and because the existing high-efficiency batteries are all doped with copper, and the introduction of copper will also damage the stability of the battery

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  • A kind of high-efficiency cadmium telluride thin-film solar cell and its preparation method

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preparation example Construction

[0035] The preparation method of the above-mentioned high-efficiency cadmium telluride thin-film solar cell comprises the following steps:

[0036] S1. Depositing the window layer 2 on the substrate layer 1;

[0037] S2. Depositing the light-absorbing layer 3 on the window layer 2, and performing an activation annealing treatment on the light-absorbing layer 3 through an activation annealing process;

[0038] S3, depositing the back electrode layer 4 on the light absorbing layer 3 to obtain a cadmium telluride thin film solar cell;

[0039] S4. Etching and cleaning the battery prepared in step S3 with hydrochloric acid with a mass concentration of 0.05-5%, and then depositing a zinc telluride thin film layer on the battery by magnetron sputtering, and the thickness of the zinc telluride thin film layer is 20-80nm;

[0040] S5. The battery processed in step S4 is first scribed by laser 1, and the battery of the assembly is divided into 200-300 units, and then the photoresist ...

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Abstract

The invention discloses a high-efficiency cadmium telluride thin-film solar cell and a preparation method thereof, comprising a substrate layer, a window layer, a light-absorbing layer and a back electrode layer arranged in sequence from bottom to top; wherein, the material of the window layer is magnesium-doped Zinc oxide, the light absorbing layer is an arsenic-doped tellurium-selenium cadmium film layer, and the back electrode layer is composed of a composite metal material of molybdenum, aluminum and chromium. The present invention replaces Cu with an appropriate amount of As to dope the cadmium telluride selenide thin film layer by means of electric injection regeneration, realizes high p-type doping density, obtains Voc > 1V, conversion efficiency > 23%, high conversion efficiency, and the whole preparation process Simple operation and easy control.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cells, in particular to a high-efficiency cadmium telluride thin-film solar cell and a preparation method thereof. Background technique [0002] Cadmium telluride solar cells, compared with monocrystalline silicon solar cells, have the advantages of convenient fabrication, low cost and lighter weight. Cadmium telluride thin-film solar cells are referred to as CdTe cells, which are thin-film solar cells based on the heterojunction of p-type CdTe and n-type CdSe. A general standard cadmium telluride thin film solar cell consists of five layers: back electrode, back contact layer, CdTe absorber layer, CdTe window layer, TCO layer. The production cost of cadmium telluride thin-film solar cells is far lower than that of crystalline silicon and other solar cell technologies. Secondly, it is very consistent with the solar spectrum and can absorb more than 95% of sunlight. On the basis of extens...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0296H01L31/0445H01L31/0224H01L31/18
CPCH01L31/02963H01L31/02966H01L31/0445H01L31/022425H01L31/1832Y02E10/50Y02P70/50H01L31/073H01L31/1864H01L31/186H01L31/0463
Inventor 彭寿陈瑛殷新建周显华魏梦楠
Owner CHINA TRIUMPH INT ENG
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