MicroLED preparation method based on three-dimensional mask substrate

Abstract

The invention relates to a MicroLED preparation method based on a three-dimensional mask substrate. The method comprises the following steps: preparing a three-dimensional mask layer on a heterogeneous substrate; epitaxially growing a group III nitride material on the heterogeneous substrate by using the three-dimensional mask layer; and carrying out epitaxial growth of a MicroLED structure layeron the III-group nitride material. According to the method, a preset stress layer is inserted in a channel growth stage in a growth process on a three-dimensional mask substrate aiming at the characteristics of the three-dimensional mask substrate and higher crystal quality requirements of a MicroLED; in the electrode manufacturing process, SiNx is used for replacing common SiO2 to serve as an insulating protection layer; the substrate is stripped by using a wet etching method; and a KOH solution is adopted to treat the bottom of the MicroLED so as to improve the light extraction efficiency.

Description

technical field [0001] The invention belongs to the technical field of micro light-emitting diode displays, and in particular relates to a preparation method of Micro LED based on a three-dimensional mask substrate. Background technique [0002] Micro LED Display (Micro LED Display) is a new generation of display technology. The structure is a miniaturized LED array, that is, the LED structure design is thinned, miniaturized and arrayed, so that its volume is about 1 times the size of the current mainstream LED. %, reaching a size range of 10-30um, each pixel can be addressed and driven to emit light independently, and the distance between pixels is reduced from the original millimeter level to the micron level. Inheriting the characteristics of LED, the advantages of Micro LED include low power consumption, high brightness, ultra-high resolution and color saturation, fast response, super power saving, long life, high efficiency, etc., and its power consumption is about LCD ...

AI Technical Summary

Problems solved by technology

Because of the small size of the MicroLED, it is intolerable for the local high dislocation density area, because the local high dislocation density will cause the device to be inconsistent with other devices, or even fail completely.

From this point of view, although the high quality of the wing area of ​​ELOG technology can meet the crystal quality requirements of Micro LED, the high dislocation density in the window area is unacceptable.

[0007] 4) In terms of production cost, Micro LED also has strict restrictions

Mass production of Micro LEDs using homogenous substrates is unrealistic because the price is too high for the market to accept

On the other hand, the use of laser lift-off technology, one-by-one electrical inspection and other technologies is also the reason why it is difficult to further reduce the cost

[0008] 5) At present, the mass transfer problem is still an important technical issue for the industrialization of Micro LED. For this reason, researchers at home and abroad have developed a variety of mass transfer methods, but they are all time-consuming and costly.

But the etching process is damaging to the side

Damage to the side wall will lead to a decrease in luminous efficiency, a shift in the luminous wavelength, a decrease in the ability to withstand current, and an increase in heat generation, which need to be avoided as much as possible

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