MicroLED preparation method based on three-dimensional mask substrate
A mask and three-dimensional technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of time-consuming, small size of Micro LED, and shift of light emission wavelength, and achieve the goals of solving wavelength drift, improving detection efficiency, and low defect density Effect
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[0046] In order to make the above objectives, features and advantages of the present invention more obvious and easy to understand, the present invention will be further described in detail below through specific embodiments and drawings, taking GaN in group III nitride materials as an example.
[0047] In the present invention, the three-dimensional mask substrate technology used can firstly provide ultra-high crystal quality GaN material for the epitaxial device structure of MicroLED, thereby solving the demand for high crystal quality in MicroLED, and overcoming many problems due to insufficient crystal quality. The problem caused. The second aspect is the easy peeling characteristics of the three-dimensional mask technology, and the stripped monomer has small bumps, which facilitates the adsorption and grabbing of the MicroLED during the mass transfer process, which can well meet the needs of the MicroLED for easy peeling and easy transfer . In the third aspect, the size can...
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