All-inorganic perovskite nanowire self-powered-short-wave photodetector and preparation method
A technology of photodetectors and nanowires, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve problems such as hindering applications, simple structure, low sensitivity, etc., to reduce leakage and enhance extraction ability, the effect of increasing the contact area
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[0040] The invention provides a preparation method of an all-inorganic perovskite nanowire self-powered-short-wave photodetector, comprising the following steps:
[0041] 1) Cleaning the FTO conductive glass substrate: Put the FTO conductive glass substrate into Decon-90 aqueous solution, deionized water, acetone, alcohol, and deionized water for ultrasonic cleaning for 15 to 20 minutes in sequence;
[0042] 2) UV-zone treatment of FTO conductive glass substrate: put the cleaned FTO conductive glass substrate in UV-zone for 10-15min;
[0043] 3) Preparation of electron transport layer: the configured TiO 2 The sol precursor was spin-coated on the treated FTO conductive glass substrate at a speed of 2000-4000 rpm, and the spin-coated TiO 2 After the film is preheated at 50-70°C for 20-30min, heated from room temperature to 450-500°C within 120-200min, and annealed for 40-60min to obtain dense TiO with a thickness of 40-80nm 2 electron transport layer;
[0044] 4) Solution pr...
Embodiment 1
[0056] 1) Cleaning the FTO conductive glass substrate: Put the FTO conductive glass substrate into Decon-90 aqueous solution, deionized water, acetone, alcohol, and deionized water for ultrasonic cleaning for 15 minutes in sequence;
[0057] 2) UV-zone treatment of FTO conductive glass substrate: the cleaned FTO conductive glass substrate is placed in UV-zone for 10min;
[0058] 3) Preparation of electron transport layer: the configured TiO 2 The sol precursor was spin-coated on the treated FTO conductive glass substrate at 2000 rpm, and the spin-coated TiO 2 After preheating the film at 60 °C for 30 min, the film was heated from room temperature to 500 °C in 180 min, and annealed for 60 min to obtain dense TiO with a thickness of 80 nm. 2 electron transport layer;
[0059] 4) Solution preparation of perovskite light absorption layer: 0.5 mol / L PbI with a volume of about 80 μL 2 The precursor solution was dropped on the prepared FTO / TiO 2 On the substrate, spin coating at ...
Embodiment 2
[0065] 1) Cleaning the FTO conductive glass substrate: Put the FTO conductive glass substrate into Decon-90 aqueous solution, deionized water, acetone, alcohol, and deionized water for ultrasonic cleaning for 20min in sequence;
[0066] 2) UV-zone treatment of FTO conductive glass substrate: the cleaned FTO conductive glass substrate is placed in UV-zone for 15min;
[0067] 3) Preparation of electron transport layer: the configured TiO 2 The sol precursor was spin-coated on the treated FTO conductive glass substrate at a speed of 3000 rpm, and the spin-coated TiO 2 After preheating the film at 70 °C for 30 min, the film was heated from room temperature to 480 °C within 200 min, and annealed for 60 min to obtain dense TiO with a thickness of 40 nm. 2 electron transport layer;
[0068] 4) Solution preparation of perovskite light absorption layer: 0.8 mol / L PbI with a volume of about 80 μL 2 The precursor solution was dropped on the prepared FTO / TiO 2 On the substrate, spin c...
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