Low-temperature oxidation method of VCSEL chip

Abstract

The invention relates to the technical field of VCSEL chip oxidation preparation, and provides a low-temperature oxidation method for a VCSEL chip, and the method comprises the following steps: etching an epitaxial wafer of the VCSEL chip into a step, and enabling an aluminum-rich AlGaAs layer of the VCSEL chip to be exposed; placing the VCSEL chip on a slide holder of a plasma cavity, and vacuumizing the plasma cavity; communicating argon with a container through a first gas pipeline, and communicating the container with the plasma cavity through a second gas pipeline; electrifying the plasmacavity to generate an electric field inside, ionizing the deionized water into active oxide particles, and reacting the active oxide particles with the aluminum-rich AlGaAs layer to generate an Al2O3layer and volatile byproducts; communicating the plasma cavity with a vacuum pump through a third gas pipeline, and enabling the vacuum pump to discharge volatile by-products to the outer side of thecavity. According to the invention, the problems of non-uniform oxidation of the VCSEL chip, the low production yield, high cost and high energy consumption which are easily caused by difficult control of temperature uniformity in the traditional high-temperature wet oxidation process are solved.

Description

technical field [0001] The invention relates to the technical field of oxidation preparation of VCSEL chips, in particular to a low-temperature oxidation method for VCSEL chips. Background technique [0002] Vertical-Cavity Surface-Emitting Laser (Vertical-Cavity Surface-Emitting Laser, referred to as VCSEL, also translated as Vertical-Cavity Surface-Emitting Laser) is a semiconductor laser, and its laser is emitted perpendicular to the top surface, which is similar to the edge-emitting laser emitted from the edge. different. [0003] VCSEL emits laser light from the surface vertical to the substrate, so it is easy to realize a large-scale light-emitting array through a planar process; the beam spread angle of the emitted laser light is small, and the spot is approximately circular; the requirements for the optical system are low; the addressable array provides Design flexibility; the temperature dependence of the laser wavelength is very low; the wafer-level manufacturing ...

AI Technical Summary

Problems solved by technology

[0008] Specifically, the technical problem to be solved by the present invention is to provide a low-temperature oxidation method for VCSEL chips to solve the traditional high-temperature wet oxidation process. The uniformity of temperature is difficult to control, which easily leads to uneven oxidation of VCSEL chips and poor production. Low efficiency, high cost, and large energy consumption

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