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Method for in situ preparation of DLC resistive electrode for large-area microstructure gas detector

A gas detector and in-situ preparation technology, which is applied to instruments, measuring devices, scientific instruments, etc., can solve the problems that DLC resistive electrodes cannot be prepared by in-situ one-time forming, low binding force, and high internal stress, and expand practical applications. , The effect of improving the bonding force and reducing the internal stress

Pending Publication Date: 2020-10-30
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a DLC resistive electrode in-situ preparation method for large-area microstructure gas detectors, to solve the existing problems in the process of preparing DLC ​​resistive electrodes that cannot be prepared in situ at one time, and the binding force is relatively weak. Low, high internal stress and other technical problems, improve the preparation efficiency and reliability of DLC resistive electrodes, to meet the needs and applications of large-area new configuration microstructure gas detectors

Method used

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  • Method for in situ preparation of DLC resistive electrode for large-area microstructure gas detector
  • Method for in situ preparation of DLC resistive electrode for large-area microstructure gas detector

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Embodiment 1

[0026] A new type of DLC resistive electrode for microstructured gas detectors was prepared by using a polyimide film with a size of 600mm×300mm, a thickness of 50±5 microns, and no copper coating on the surface as the electrode substrate.

[0027] Equipment used: see attached figure 1 , there are four sets of heating devices 5 in the vacuum chamber, and four sets of vacuum vapor deposition systems with magnetron sputtering cathodes 1-4 on the chamber wall, of which 1 is equipped with high-purity metal chromium targets, and 2 and 4 are counter-positioned with high-purity graphite targets 3 high-purity metal copper targets; each sputtering target is equipped with a baffle 6 that can control opening and closing. Among them, the purity of high-purity graphite, chromium and copper targets is 99.99%, and the size of the target is 600mm×125mm×12mm.

[0028] The sample turret is a stainless steel orifice cylinder fixed on the rotating shaft, which can facilitate the flexible adjustm...

Embodiment 2

[0036] A new type of DLC resistive electrode for microstructured gas detectors was prepared on the basis of a polyimide film with a size of 1500mm×500mm, a thickness of 50±5 microns, and a single-sided copper coating (the thickness of the copper layer is 5 microns). .

[0037] Equipment used: Same as Example 1, with the same installation position and purity of the sputtering target.

[0038] Process steps for in-situ preparation of DLC resistive electrodes:

[0039] (1) Surface pretreatment of single-sided copper-clad polyimide film: Wipe and clean the surface of the copper-free layer of single-sided copper-clad polyimide film with a dust-free cloth dipped in absolute ethanol to remove dust and other pollutants , shield and protect the copper-clad surface with aluminum foil, clamp it on the sample turntable and place it in the cavity; vacuumize to 5×10 -3 Pa, turn on the heating device in the cavity and bake at 150°C for 7 hours to completely remove residual moisture; then k...

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Abstract

The invention discloses a method for in-situ preparation of DLC resistive electrode for large area microstructure gas detector. Firstly, the large-area polyimide film substrate is cleaned, and then itis vacuumed on the sample rotating frame to conduct heating, bombardment and etching pretreatment. Then by controlling the opening and closing of the front baffle of the sputtering cathode target, the high-purity graphite target is sputtered to deposit a 50-150nm DLC resistive layer, and the high-purity chromium target and copper target are sputtered to deposit a bonding layer and a transition layer of 10-80nm, and copper target are sputtered to deposit a 4-8 [mu] m pure copper layer. At the same time, the plasma etching technology is used to improve the film density and reduce the internal stress in the DLC resistive electrode. The method can in-situ prepare a large area novel DLC resistive electrode substrate with good adhesion and low internal stress, and can be popularized and appliedin new configuration large area microstructure gas detector.

Description

technical field [0001] The invention relates to a method for preparing a DLC resistive electrode, in particular to a method for preparing a DLC resistive electrode in situ, which is mainly used for large-area microstructure gas detectors and belongs to the field of microstructure gas detectors. Background technique [0002] With the development of nuclear and particle physics experiments, Micro-Pattern Gas Detector (MPGD) has the advantages of good position resolution, high counting rate capability, stable working performance, strong radiation resistance, and low cost. It can meet the experimental requirements of high count rate capability and position resolution capability, and has attracted the attention of domestic and foreign research colleagues in the field of particle detection, and has been widely used in current large-scale nuclear and particle physics experiments. As one of the key components in the microstructure gas detector, the resistive electrode can suppress t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/18C23C14/16C23C14/35C23C14/58G01N27/00
CPCC23C14/0605C23C14/165C23C14/185C23C14/345C23C14/3492C23C14/352C23C14/5826C23C14/5873G01N27/00
Inventor 尚伦霖张广安周意鲁志斌吕游王旭宋国锋刘建北
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI