Composition for electron transport layer, electron transport layer and photoelectric device
A technology of electron transport layer and optoelectronic device, which is applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problems of interface damage, easy aging of electronic materials, fast brightness decay, etc., and achieve lower injection barrier and driving voltage , Improve luminous efficiency and lifespan, and improve the effect of short lifespan
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[0033] Material Example 1
[0034] This embodiment provides 17 types of electron transport materials, the structural formulas of which are formula ET-1 to formula ET-17, and the details are as follows:
[0035]
[0036]
[0037] The electron mobility test is performed on the electron transport materials with the above structural formulas of formula ET-1 to formula ET-17. The test method is as follows:
[0038] Using vacuum evaporation equipment, vacuum evaporation is carried out on the substrate with ITO. Since the material to be tested is an electron transport material, a layer of electron blocking material with a thickness of 5nm is first evaporated, and then the evaporation is to be carried out on this basis. The thickness of the test material and Liq is 50nm. After the vapor deposition of the test material is completed, the vapor deposition has an electron injection type material with a thickness of 2nm. Finally, a layer of cathode is vapor deposited, which can be Ag, etc., and f...
Example Embodiment
[0041] Device Example 1
[0042] This embodiment provides a photoelectric device, and its preparation method includes the following steps:
[0043] S1. Put the ITO / Ag / ITO film (the thickness of ITO is 14nm and the thickness of Ag is 150nm) on the glass substrate (150nm) of the OLED device for 2 times in distilled water, ultrasonic washing for 30 minutes, and repeated washing with distilled water 2 times , Ultrasonic cleaning for 10 minutes, after the distilled water cleaning, solvents such as isopropanol, acetone, methanol and other solvents are ultrasonically washed in order and then dried, transferred to the plasma cleaning machine, washed for 5 minutes, and sent to the vapor deposition machine.
[0044] S2, the compound N,N'-diphenyl-N,N'-bis(2-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) and 2,3,5 ,6-Tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethane (F4-TCNQ) was introduced into the chamber of the vacuum vapor deposition equipment at a doping ratio of 97:3, and then the equipment ...
Example Embodiment
[0054] Device Example 2
[0055] This embodiment provides an optoelectronic device, which is prepared according to the preparation method provided in the device embodiment 1 above, with the only difference: replacing the material ET-1 / ET-2 of the electron transport layer with the material in embodiment 1 ET-1 / ET-5.
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