Composition for electron transport layer, electron transport layer and photoelectric device
A technology of electron transport layer and optoelectronic device, which is applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problems of interface damage, easy aging of electronic materials, fast brightness decay, etc., and achieve lower injection barrier and driving voltage , Improve luminous efficiency and lifespan, and improve the effect of short lifespan
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Embodiment 1
[0034] This embodiment provides 17 kinds of electron transport materials, the structural formulas of which are formula ET-1 ~ formula ET-17, as follows:
[0035]
[0036]
[0037] Electron mobility tests are performed on the electron transport materials whose structural formulas are formula ET-1 to formula ET-17 respectively, and the test method is as follows:
[0038] Vacuum evaporation equipment is used to carry out vacuum evaporation on the ITO substrate. Since the material to be tested is an electron transport material, a layer of electron blocking material is first evaporated, with a thickness of 5nm. On this basis, the evaporation is carried out. The test material and Liq, the thickness is 50nm, after the material to be tested is evaporated, the material with electron injection is evaporated, the thickness is 2nm, and finally a layer of cathode is evaporated, which can be Ag, etc., and finally the SCLC space charge control current method is used for simulation. Cal...
Embodiment 1
[0042] This embodiment provides a kind of optoelectronic device, its preparation method comprises the following steps:
[0043]S1. Put the ITO / Ag / ITO thin film (ITO thickness is 14nm, Ag thickness is 150nm) on the glass substrate (150nm) of the OLED device for 2 times in distilled water, ultrasonic cleaning for 30 minutes, and repeated cleaning 2 times with distilled water , Ultrasonic cleaning for 10 minutes, after distilled water cleaning, solvents such as isopropanol, acetone, methanol, etc. are ultrasonically washed in sequence, dried, transferred to a plasma cleaner, washed for 5 minutes, and sent to an evaporation machine.
[0044] S2, compound N, N'-diphenyl-N, N'-di(2-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) and 2,3,5 , 6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethylmethane (F4-TCNQ) is introduced into the small chamber of the vacuum vapor deposition equipment according to the doping ratio of 97:3, and then the equipment The pressure in the chamber is controlled ...
Embodiment 2
[0055] This embodiment provides a photoelectric device, which is prepared according to the preparation method provided in the above device embodiment 1, the only difference is that the material ET-1 / ET-2 of the electron transport layer is replaced with the material in embodiment 1 ET-1 / ET-5.
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