GaN-based laser with asymmetric In component InGaN waveguide layer

Abstract

The invention discloses a GaN-based laser with an asymmetric In component InGaN waveguide layer. The GaN-based laser comprises: a GaN homogeneous substrate; an n-type GaN homogeneous epitaxial layer which is manufactured on the GaN homogeneous substrate; an n-type AlGaN limiting layer which is manufactured on the n-type GaN homogeneous epitaxial layer; an InGaN lower waveguide layer which is manufactured on the n-type AlGaN limiting layer; a quantum well active region which is manufactured on the InGaN lower waveguide layer; a GaN upper waveguide layer which is manufactured on the quantum wellactive region; a p-type AlGaN electron blocking layer which is manufactured on the GaN upper waveguide layer; a p-type AlGaN limiting layer which is manufactured on the AlGaN electronic barrier layer; a p-type heavily doped GaN epitaxial layer which is manufactured on the p-type AlGaN limiting layer; a p-type ohmic electrode which is manufactured on the p-type heavily doped GaN layer; and an n-type ohmic electrode which is manufactured on the lower surface of the GaN homogeneous substrate. By adopting the asymmetric waveguide layer structure, the optical field can be effectively limited, andthe optical field distribution is improved, so that the optical loss is reduced, and the performance of the laser is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a gallium nitride-based laser with an asymmetric In composition InGaN waveguide layer. Background technique [0002] Gallium nitride-based materials, including GaN, AlN, InN and their alloys, are the third-generation semiconductors after silicon and gallium arsenide, and have broad application prospects and research value in military and civilian fields. As a third-generation semiconductor device, GaN-based blue-violet lasers have the advantages of small size, high efficiency, long life, and fast response, and have significant advantages in lighting and solid-state storage. [0003] In recent years, people have made great progress in GaN-based blue-violet lasers, but there are still many challenges in realizing low-threshold, high-power blue-violet lasers. For lasers, the distribution and absorption loss of the optical field are the key factors affec...

AI Technical Summary

Problems solved by technology

This will lead to an unbalanced distribution of the light field and more leakage into the p-type region, resulting in increased optical loss and reduced optical confinement factor

This in turn leads to an increase in the threshold current and a decrease in the output optical power

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