A kind of preparation method of ultrathin ribbon perovskite single crystal

A perovskite, ultra-thin technology, applied in the field of semiconductor optoelectronic material preparation, can solve the problems of rare research on ultra-thin perovskite single crystals, and achieve the effect of smooth surface and small roughness

Active Publication Date: 2021-08-17
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It is worth noting that the previous research on single crystals mainly focused on how to grow single crystals with higher crystallinity, focusing on the crystal quality of the crystals, and the research on ultra-thin perovskite single crystals is rare.

Method used

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  • A kind of preparation method of ultrathin ribbon perovskite single crystal
  • A kind of preparation method of ultrathin ribbon perovskite single crystal
  • A kind of preparation method of ultrathin ribbon perovskite single crystal

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preparation example Construction

[0039] A method for preparing an ultra-thin strip-shaped perovskite single crystal, the steps of the method are described as follows:

[0040] 1) Combine AX and PbX 2 Dissolve in the precursor solvent according to the molar ratio of n:1, heat and stir to obtain three-dimensional (3D) perovskite APbX 3 The precursor solution, the concentration range is 0.001-0.02mol L -1 ;

[0041] 2) Add the above APbX 3 Take an appropriate amount of the precursor solution and drop it on the substrate, and place it in a glass vessel filled with anti-solvent, seal the glass vessel with a sealing film, and pierce a certain number of pinholes on the sealing film, and the needle The range of holes is 20-60, which is used to control the volatilization speed of solvent;

[0042] 3) Place the above-mentioned glass device quietly in an oven that has been heated up, and let it grow;

[0043] The structure of the ultrathin perovskite single crystal APbX described in 3 Among them, A is a short-chai...

Embodiment 1

[0059] In this embodiment, a method for preparing a high-quality, low-laser-threshold one-dimensional ultrathin ribbon-shaped perovskite single crystal includes the following steps:

[0060] 1) Combine MABr and PbBr 2 Dissolve in DMSO according to the molar ratio of 1:1, heat and stir to obtain 3D perovskite MAPbBr 3 The precursor solution, its concentration is 0.005mol L -1 ;

[0061] 2) the above MAPbBr 3 Take 30 μL of the precursor solution and drop it on the silica substrate, place it in a glass vessel filled with toluene, seal the glass vessel with a sealing film, and make 40 small holes;

[0062] 3) Slowly place the above-mentioned glass device in an oven at 40°C, and let it grow for 20 hours;

[0063] Among them, the ultrathin perovskite MAPbBr 3 The thickness of the single crystal is 100nm, and the emission wavelength is 515nm. At room temperature, laser lasing by pulsed optical pumping can be realized, and there is no continuous optical pumping lasing phenomenon....

Embodiment 2

[0065] In this embodiment, a method for preparing a high-quality, low-laser-threshold one-dimensional ultrathin ribbon-shaped perovskite single crystal includes the following steps:

[0066] 1) Combine CsBr and PbBr 2 Dissolve in DMF according to the molar ratio of 1.2:1, heat and stir to obtain 3D perovskite CsPbBr 3 The precursor solution, its concentration is 0.008mol L -1 ;

[0067] 2) the above CsPbBr 3 Take 20 μL of the precursor solution and drop it on the silica substrate, and place it in a glass vessel filled with toluene and dichloromethane, seal the glass vessel with a sealing film, and make 30 small holes;

[0068] 3) Slowly place the above-mentioned glass device in an oven at 30°C, and let it grow for 24 hours;

[0069] Among them, such as figure 1 Shown as CsPbBr 3 Brightfield (left panel) and darkfield (right panel) microscope images of a perovskite single crystal. Its appearance is ultra-thin ribbon, the thickness of the single crystal is 70nm, the aspec...

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Abstract

The invention discloses a method for preparing an ultrathin nanoribbon structure perovskite single crystal. The preparation method comprises the following steps: 1) combining AX and PbX 2 Dissolve in the precursor solvent according to the molar ratio of n:1, heat and stir to obtain the three-dimensional perovskite APbX 3 The precursor solution; 2) the three-dimensional perovskite APbX 3 Take an appropriate amount of the precursor solution and drop it on the substrate, place the substrate in a vessel containing anti-solvent, seal the mouth of the vessel; place it in an oven, let it stand for crystal growth, and obtain an ultra-thin tape Shaped perovskite single crystal; wherein: AX is selected from one or more of methylamine bromide, formamidine bromide and cesium bromide; X is a halogen anion, and n is 1-2.2. The optimal luminous wavelength of the ultra-thin perovskite single crystal obtained by the invention is 508-512nm, which realizes low-threshold laser lasing at room temperature and continuous optical pumping laser lasing at liquid nitrogen temperature.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic material preparation, and relates to a method for preparing a high-quality, low-laser-threshold one-dimensional nano single crystal, in particular to a liquid-phase growth method for a perovskite single crystal with an ultra-thin structure. Background technique [0002] In recent years, metal halide perovskite materials have been widely used in solar energy due to their high crystal quality, high fluorescence quantum yield, high light absorption coefficient, bipolar carrier transport, long carrier diffusion length, and solution processing. The fields of batteries, light-emitting diodes, photodetectors and lasers have attracted great attention of scientific researchers. Since the quality of materials often determines the performance of devices, most of the current research is devoted to the synthesis of high-quality perovskite materials, such as perovskite single crystals or si...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/12C30B7/14B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C30B7/14C30B29/12
Inventor 张青李美丽尚秋宇
Owner PEKING UNIV
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