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Cesium chloride crystal, preparation method and application

A technology of cesium chloride and crystal, which is applied in the field of cesium chloride crystal and its preparation, can solve the problems of inability to crystallize crystal form, good control of size growth rate, control of laser crystal size growth rate, etc.

Active Publication Date: 2021-05-21
JIANGXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Although the energy of the laser can control the number of crystals in the non-photochemical laser-induced crystallization technology, it is difficult for the laser to control the crystal size and growth rate in the subsequent crystal growth, especially in the process of preparing cesium chloride crystals. Non-photochemical laser-induced crystallization technology cannot control the crystal form, size, and growth rate well

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  • Cesium chloride crystal, preparation method and application
  • Cesium chloride crystal, preparation method and application
  • Cesium chloride crystal, preparation method and application

Examples

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Embodiment 1

[0034] The invention provides a kind of preparation method of cesium chloride crystal, such as figure 1 shown, including the following steps:

[0035] S1, configuration contains the supersaturated cesium chloride solution of certain mass concentration additive;

[0036] S2, using a single pulse laser with a wavelength of 532-1064nm, a pulse width of 5-6ns, and an energy of 15-100mJ to irradiate the supersaturated cesium chloride solution to generate cesium chloride crystals;

[0037] Wherein, the additive is polyepoxysuccinic acid.

[0038] It should be noted that, in the embodiment of the present application, S1 specifically includes: according to the degree of supersaturation of 1.15 (concentration 2.15gg -1 ) prepare a cesium chloride supersaturated solution, and add polyepoxysuccinic acid (PESA) to the solution so that the mass fraction of polyepoxysuccinic acid is 0.2 to 0.4%, and then the solution is sealed in a glass container and the temperature is 85°C for drying D...

Embodiment 2

[0045] Same as Example 1, the difference is that the mass fraction of polyepoxysuccinic acid (PESA) is 0.3%.

Embodiment 3

[0047] Same as Example 1, the difference is that the mass fraction of polyepoxysuccinic acid (PESA) is 0.4%.

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Abstract

The invention provides a cesium chloride crystal and its preparation method and application. The preparation method includes the following steps: configuring a supersaturated cesium chloride solution containing an additive with a certain mass concentration; using a wavelength of 532-1064nm and a pulse width of 5-6ns , A single pulse laser with an energy of 15-100mJ irradiates a supersaturated cesium chloride solution to generate cesium chloride crystals; wherein, the additive is polyepoxysuccinic acid or polyaspartic acid. The preparation method of the cesium chloride crystal of the present invention, at first utilizes the laser to induce the crystal nucleus in the solution, because the laser has the coordinating effect of time and space to the crystal nucleation, then the growth of the crystal will be affected by polyepoxysuccinic acid or polyaspartic acid in the solution The controllable crystal form and size are formed under the influence of amino acid; through this method, the control of the whole process of crystallization from crystal nucleation to crystal growth is realized; and the two additives of polyepoxysuccinic acid or polyaspartic acid are both Green and environmentally friendly non-toxic acidic polymer, safe and environmentally friendly.

Description

technical field [0001] The invention relates to the technical field of crystal materials, in particular to a cesium chloride crystal and a preparation method and application thereof. Background technique [0002] At present, the use of laser is non-photochemical laser-induced crystallization technology (NPLIN for short). Infrared nanosecond laser or visible laser is used to irradiate supersaturated solution or molten salt to induce crystal nucleation and growth, which can be used to prepare crystals. The advantage of non-photochemical laser-induced crystallization (NPLIN for short) is that it does not involve photochemical reactions and does not affect the molecular structure inside the crystal. Its advantage is that it can control the position of crystal nucleation and the time of crystallization, and it can also effectively improve the purity of the crystal. Drugs such as sulfathiazole and carbamazepine have been successfully synthesized by this technology. [0003] Alth...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/12C30B30/00C30B7/00
CPCC30B7/00C30B29/12C30B30/00
Inventor 刘瑶
Owner JIANGXI UNIV OF SCI & TECH