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High-power microwave rectification circuit with multi-gallium nitride Schottky diode series-parallel connection structure

A gallium nitride Schottky and diode string technology, applied in the microwave field, can solve the problems of low rectification power and limited power density, and achieve the effects of increased forward current, low turn-on voltage, and extended forward linear region

Pending Publication Date: 2020-11-13
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Transverse Gallium Nitride Schottky diodes with a grooved anode structure can achieve excellent frequency response and power capacity at the same time, and can be used in microwave rectifier circuits to have the characteristics of high power and high efficiency at the same time, but the existing technology uses diodes in parallel The circuit is implemented in the way of access, the power density is limited, and the rectification power is low

Method used

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  • High-power microwave rectification circuit with multi-gallium nitride Schottky diode series-parallel connection structure
  • High-power microwave rectification circuit with multi-gallium nitride Schottky diode series-parallel connection structure
  • High-power microwave rectification circuit with multi-gallium nitride Schottky diode series-parallel connection structure

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Embodiment Construction

[0023] Specific embodiments and effects of the present invention are described in further detail below in conjunction with the accompanying drawings:

[0024] refer to figure 1 , the high-power microwave rectifier circuit with multi-gallium nitride Schottky diode series-parallel structure of the present invention includes an input port 1, a matching circuit 2, a DC blocking capacitor 3, an input filter 4, a rectifier 5, an output filter 6 and load 7, wherein:

[0025] The input port 1 adopts an SMA female coaxial connector.

[0026] The matching circuit 2 adopts an open-circuit stub matching structure, its left end is connected to the input port 1, and its right end is connected to the input filter 4 through a DC blocking capacitor 3. In this example, a high-frequency ceramic capacitor of 2.7pF is selected but not limited to.

[0027] The input filter 4 adopts a low-pass filter, which is used to suppress the passage of microwave signals greater than the operating frequency a...

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Abstract

The invention discloses a high-power microwave rectification circuit with a multi-GaN Schottky diode series-parallel structure, and mainly solves the problem of low microwave rectification power in the prior art. The circuit is formed by sequentially connecting an input port (1), a matching circuit (2), a blocking capacitor (3), an input filter (4), a rectifier (5), an output filter (6) and a load(7) from left to right. The rectifier adopts a structure that a plurality of gallium nitride Schottky diodes are connected in series and in parallel, is integrally packaged in a diode shell and is connected to a circuit in parallel. Actual measurement shows that 71% of the highest rectification efficiency is obtained when the frequency is 2.45 GHz, the load resistance is 350 ohm and the input power is 10 W, the rectification power is remarkably improved, and the rectifier can be applied to a high-power microwave energy transmission system.

Description

technical field [0001] The invention belongs to the field of microwave technology, in particular to a high-power microwave rectifier circuit with a series-parallel structure of multi-gallium nitride Schottky diodes, which can be used in a microwave wireless energy transmission system. [0002] technical background [0003] After years of development, wireless charging technology has gradually matured and has been widely used in the field of consumer electronics, but its charging distance is very short. The only technical solution that can realize long-distance power transmission is to use microwaves to use high-frequency electromagnetic wave emission and collection to realize point-to-point wireless transmission of power in space. It has great application prospect and research value in disaster area emergency power supply and other fields. At the receiving end of the microwave wireless energy transmission technology, the microwave rectifier circuit converts the received micr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M7/06H01L29/872H01L29/20
CPCH02M7/06H01L29/872H01L29/2003Y02B70/10
Inventor 张进成党魁周弘张涛张苇杭张燕妮宁静郝跃
Owner XIDIAN UNIV
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