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Silver/bismuth vanadate/carbon nitride heterojunction photocatalyst as well as preparation method and application thereof

A photocatalyst and carbon nitride technology, which is applied in physical/chemical process catalysts, chemical instruments and methods, water/sludge/sewage treatment, etc., can solve the problem of poor carrier separation efficiency and photogenerated electron-hole recombination rate Advanced problems, to achieve the effect of high degradation rate and good application prospects

Active Publication Date: 2020-11-27
SHAANXI UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] However, BiVO 4 The disadvantages of poor carrier separation efficiency and high recombination rate of photogenerated electron-hole pairs limit their practical applications.

Method used

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  • Silver/bismuth vanadate/carbon nitride heterojunction photocatalyst as well as preparation method and application thereof
  • Silver/bismuth vanadate/carbon nitride heterojunction photocatalyst as well as preparation method and application thereof
  • Silver/bismuth vanadate/carbon nitride heterojunction photocatalyst as well as preparation method and application thereof

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preparation example Construction

[0034] The preparation method of silver / bismuth vanadate / carbon nitride heterojunction photocatalyst of the present invention can solve BiVO by metal deposition and electrostatic adsorption method 4 The problem of poor carrier separation efficiency and high recombination rate of photogenerated electron-hole pairs involves the following steps:

[0035] Step 1, 6mmoL Bi(NO 3 ) 3 ·5H 2 O dissolved in 40 mL of HNO with a concentration of 1 mol / L 3 solution, after stirring evenly, directly add 6mmoL ammonium metavanadate NH 4 VO 3 , stirred for 120min to form precursor solution A;

[0036] Step 2. Precursor solution A can generally undergo a hydrothermal reaction at 70-80°C for 14-16 hours to prepare monoclinic BiVO with exposed (010) crystal plane. 4 Powder, the powder is washed with ethanol and water in turn, and then dried for later use;

[0037] Step 3, the exposed (010) crystal plane BiVO 4 Add the powder to 40mL deionized water and mix evenly, irradiate with ultraviol...

Embodiment 1

[0045] Step 1, 6mmoL Bi(NO 3 ) 3 ·5H 2 O dissolved in 40 mL of HNO with a concentration of 1 mol / L 3 solution, after stirring for 40min, directly add 6mmoL NH 4 VO 3 , stirred for 120min to form precursor solution A;

[0046] Step 2, Precursor solution A is hydrothermally reacted at 70°C for 16 hours to prepare BiVO with exposed (010) crystal plane 4 Powder, the powder is washed with ethanol and water in turn, and then dried for later use;

[0047] Step 3, the exposed (010) crystal plane BiVO 4 Add the powder to 40mL deionized water and mix evenly, irradiate with ultraviolet light for 0.5h, add AgNO 3 , continued ultrasonic stirring for 4h under UV light, AgNO 3 : BiVO 4 The mass ratio of Ag was 2.5:10, followed by washing with water, washing with ethanol, and drying to prepare Ag loaded on BiVO 4 (010) Ag / (010) BiVO 4 Powder.

[0048] Step 4, 10g of melamine C 3 N 3 (NH 2 ) 3 Put it into a beaker, and add 95mL1mol / L HNO prepared in advance at the same time 3 ...

Embodiment 2

[0052] Step 1, 6mmoL Bi(NO 3 ) 3 ·5H 2 O dissolved in 40 mL of HNO with a concentration of 1 mol / L 3 solution, after stirring for 40min, directly add 6mmoL NH 4 VO 3 , stirred for 120min to form precursor solution A;

[0053] Step 2, Precursor solution A is hydrothermally reacted at 75°C for 16 hours to prepare BiVO with exposed (010) crystal plane 4 Powder, the powder is washed with ethanol and water in turn, and then dried for later use;

[0054] Step 3, the exposed (010) crystal plane BiVO 4 Add the powder to 40mL of deionized water and mix evenly, irradiate with ultraviolet light for 1h, add AgNO 3 , continued ultrasonic stirring for 5 h under UV light, AgNO 3 : BiVO 4 The mass ratio of Ag was 2.5:10, followed by washing with water, washing with ethanol, and drying to prepare Ag loaded on BiVO 4 (010) Ag / (010) BiVO 4 Powder.

[0055] Step 4, 10g of melamine C 3 N 3 (NH 2 ) 3 Put it into a beaker, and add 95mL of 1.3mol / L HNO prepared in advance at the same ti...

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Abstract

The invention discloses a silver / bismuth vanadate / carbon nitride heterojunction photocatalyst as well as a preparation method and application thereof. The method comprises the following steps of: step1, adding BiVO4 powder with an exposed (010) crystal face into deionized water, performing uniform mixing, carrying out ultraviolet irradiation, adding AgNO3, carrying out uniform mixing under ultraviolet irradiation, sequentially washing and drying precipitates to obtain Ag / BiVO4 powder; uniformly mixing melamine, an HNO3 solution and ethanol, drying the mixture by distillation, calcining the obtained precursor twice, and uniformly mixing the obtained powder in deionized water; and step 2, uniformly mixing the Ag / BiVO4 powder in the deionized water, carrying out ultraviolet irradiation, andsequentially washing and drying the powder to obtain the silver / bismuth vanadate / carbon nitride heterojunction photocatalyst. A photo-selective deposition method is adopted, so that the photo-responserange of the catalyst is enlarged, the separation efficiency of carriers is improved, the recombination rate of electrons and hole pairs is reduced, and the effective photocatalytic activity of heterojunctions is realized.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a silver / bismuth vanadate / carbon nitride heterojunction photocatalyst and a preparation method and application thereof. Background technique [0002] The environmental pollution problem brought about by the rapid development of industry is seriously deteriorating. Semiconductor photocatalysis technology can use clean and renewable energy to degrade pollutants and realize environmental purification. [0003] Bismuth vanadate (BiVO 4 ) mainly has three crystal structures of tetragonal scheelite, tetragonal zircon and monoclinic scheelite. Monoclinic BiVO 4 There is also an obvious absorption band in the visible region, and the monoclinic phase BiVO 4 The absorption in the visible region is mainly caused by the transition of electrons from the Bi 6s orbital or the hybrid orbital of Bi 6s and O 2p to the V 3d orbital. Monoclinic BiVO 4 (m-BiVO 4 ) has a bandgap of about 2.4e...

Claims

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Application Information

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IPC IPC(8): B01J27/24C02F1/30C02F101/30C02F101/38
CPCB01J27/24C02F1/30C02F2305/10C02F2101/38C02F2101/30C02F2305/023B01J35/39Y02W10/37
Inventor 谈国强党明月王敏王勇张碧鑫杨迁张丹任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
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