Preparation method of upright Au nanocone with high adhesion to surface of substrate
A substrate surface, high-adhesion technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, photovoltaic power generation, etc., can solve the problem of low-temperature aging of gold nanocones that cannot be used to improve the adhesion between upright gold nanocones and substrates Problems such as low deformation temperature, low adhesion between gold nanocone and substrate, etc., achieve the effect suitable for commercial large-scale production, no special requirements, and easy operation
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[0022] a. Clean the silicon wafer: Soak the silicon wafer (size 1*1) crystal direction (111) in analytical pure acetone for 3 minutes at room temperature, put the silicon wafer soaked in acetone into an ultrasonic container filled with deionized water , cleaning for 10 min; use CP4A lotion to scratch the surface of the ultrasonically treated silicon wafer until the surface roughness is less than 1 nm; put the scratched silicon wafer into 7% hydrofluoric acid aqueous solution for wet method etching, soaking for 10 min, immersing the silicon wafer after hydrofluoric acid aqueous solution wet etching treatment in an ultrasonic container filled with deionized water, cleaning for 5 min, to obtain a silicon wafer with a clean surface, and using nitrogen gas to clean the silicon wafer Blow dry and store in a desiccator; if figure 1 Shown, 5μm top view and 500nm section view.
[0023] b. Silicon wafer etching: Dip the silicon wafer directly into the etchant for 3 minutes at room temp...
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