Preparation method of upright Au nanocone with high adhesion to surface of substrate

A substrate surface, high-adhesion technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, photovoltaic power generation, etc., can solve the problem of low-temperature aging of gold nanocones that cannot be used to improve the adhesion between upright gold nanocones and substrates Problems such as low deformation temperature, low adhesion between gold nanocone and substrate, etc., achieve the effect suitable for commercial large-scale production, no special requirements, and easy operation

Active Publication Date: 2020-12-01
YANTAI NANSHAN UNIV
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Problems solved by technology

In addition to the complicated process or huge cost of these methods, the low adhesion of gold nanocones to the substrate is very low due to the lack of an annealing welding process in most methods
It is worth mentioning here that the low-temperature aging deformation temperature of gold nanocones is very low, so general annealing cannot be used to improve the adhesion of upright gold nanocones to the substrate

Method used

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  • Preparation method of upright Au nanocone with high adhesion to surface of substrate
  • Preparation method of upright Au nanocone with high adhesion to surface of substrate
  • Preparation method of upright Au nanocone with high adhesion to surface of substrate

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[0022] a. Clean the silicon wafer: Soak the silicon wafer (size 1*1) crystal direction (111) in analytical pure acetone for 3 minutes at room temperature, put the silicon wafer soaked in acetone into an ultrasonic container filled with deionized water , cleaning for 10 min; use CP4A lotion to scratch the surface of the ultrasonically treated silicon wafer until the surface roughness is less than 1 nm; put the scratched silicon wafer into 7% hydrofluoric acid aqueous solution for wet method etching, soaking for 10 min, immersing the silicon wafer after hydrofluoric acid aqueous solution wet etching treatment in an ultrasonic container filled with deionized water, cleaning for 5 min, to obtain a silicon wafer with a clean surface, and using nitrogen gas to clean the silicon wafer Blow dry and store in a desiccator; if figure 1 Shown, 5μm top view and 500nm section view.

[0023] b. Silicon wafer etching: Dip the silicon wafer directly into the etchant for 3 minutes at room temp...

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Abstract

The invention relates to a preparation method of an upright Au nanocone with high adhesion to the surface of a substrate. The preparation method comprises the following steps: corroding a large numberof nanoscale corrosion holes in the surface of a silicon wafer; evaporating Au on the surface of the silicon wafer, and further forming a large-scale Au-Si binary alloy welding point at the Au-Si interface in the etching hole through annealing to serve as a nano-sized clamping end; and preparing the Au nanocone on the surfaces of the Au foil and Si through mechanical separation. According to thestructure, the binding force of the Au nanocone and the substrate is remarkably improved, and a new technical means is provided for improving the device stability and prolonging the service life of anSERS detector and a solar cell. The design and preparation process disclosed by the invention has no special condition requirements, is easy to operate and simple in equipment requirements, and is particularly suitable for commercial large-scale production.

Description

technical field [0001] The invention belongs to the technical field of preparation of microstructure technology, in particular to a method for preparing an upright Au nano cone with high adhesion to a substrate surface. Background technique [0002] Au nanocones have a remarkable light-enhancing effect due to their tips, and have attracted extensive attention in SERS detectors, as well as solar cells. Upright Au nanocones have been prepared by electron beam lithography, nanotransfer printing, nanoimprinting, ultrasonic-assisted interfacial synthesis, and AAO template evaporation coating. In addition to the complicated process or huge cost of these methods, the low adhesion of gold nanocones to the substrate is very low due to the lack of an annealing welding process in most methods. It is worth mentioning here that the low-temperature aging deformation temperature of gold nanocones is very low, so general annealing cannot be used to improve the adhesion of upright gold nano...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0236G01N21/65
CPCH01L31/1804H01L31/02363G01N21/658Y02E10/547Y02P70/50
Inventor 李彩琼赵俊凤刘文文赵志国史丹丹史先利董晓燕余鑫祥戴菡
Owner YANTAI NANSHAN UNIV
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