Graphene semiconductor radiation detection device and preparation method thereof

Abstract

The invention relates to a graphene semiconductor radiation detection device and a preparation method thereof. A graphene field effect transistor resistance value is adopted as a measurement physicalquantity, and the device specifically comprises a semiconductor crystal material layer, an insulation isolation layer, a graphene material layer and an induction signal electrode layer, a surface element array structure graphene structure layer is prepared on the surface of a high atomic number radiation effect crystal, a surface element array graphene field-effect tube structure is constructed, asemiconductor medium CdZnTe crystal material is adopted as a ray photon absorption medium, and meanwhile, a graphene field-effect tube to which bias voltage is applied is adopted as a signal generation layer. The resistance value of the graphene material layer is used as a detection physical quantity, the high cost and complexity of a traditional charge sensitive pre-amplification circuit can beeffectively reduced, and meanwhile, the anti-interference performance of a signal transmission link can be effectively improved.

Description

technical field [0001] The invention belongs to the field of radiation detection devices, in particular to a semiconductor radiation detection device and a preparation method thereof Background technique [0002] The invention relates to the technical field of radiation spectrum detection such as X-rays, Gamma rays and neutron rays, and in particular to a radiation spectrum detection chip architecture based on semiconductor radiation medium material for detection of ray photon pulse amplitude and discrimination counting. [0003] For radiation detectors, different X-rays or radionuclides can be distinguished through the difference in ray radiation energy, and the measurement of X-ray intensity and the energy of different nuclides contained in Gamma rays can be realized. [0004] According to the different materials used in the detector, radiation detectors can be divided into gas ionization counters, scintillator detectors and semiconductor detectors. The gas ionization cou...

AI Technical Summary

Problems solved by technology

Disadvantages of the existing technology: At present, the traditional semiconductor radiation detectors use the measurement and processing of the induced charge signal generated during the migration process of the photogenerated carrier signal as the main signal processing process, through various electrons with low noise and high signal-to-noise ratio. The noise reduction and amplification processing of the charge signal is carried out by using the circuit technology, and the induced charge signal is converted into a voltage signal for later pulse amplitude screening processing.

[0011] In this signal processing flow, the induced charge signal is used as the original signal output by the detector, and its anti-interference is poor. Usually, the charge-sensitive amplifier circuit used has extremely high requirements on the signal noise and the electromagnetic shielding of the detector, so it is usually necessary to The preamplifier circuit and the readout electrode are closely connected by flip-chip welding to reduce the signal transmission path

At the same time, different low-noise charge-sensitive amplifier circuits are designed for the first-stage processing circuit of the induced charge signal. Due to the requirements of high sensitivity and high signal-to-noise ratio, the preamplifier circuit is usually relatively complicated, resulting in a large circuit area of ​​the corresponding ASIC chip. , the cost is high, and the noise performance is not ideal, and usually requires further shaping and amplifying circuits for processing

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